FDMS3600AS

FDMS3600AS
Mfr. #:
FDMS3600AS
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET DUAL N-CH. ER TRENCH MO
生命周期:
制造商新产品。
数据表:
FDMS3600AS 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
安森美半导体
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
贴片/贴片
包装/案例:
Power-56-8
通道数:
2 Channel
晶体管极性:
N通道
配置:
双重的
商品名:
功率级 PowerTrench SyncFet
打包:
卷轴
高度:
1.1 mm
长度:
6 mm
系列:
FDMS3600AS
晶体管类型:
2 N-Channel
宽度:
5 mm
品牌:
安森美半导体/飞兆半导体
产品类别:
MOSFET
出厂包装数量:
3000
子类别:
MOSFET
单位重量:
0.003175 oz
Tags
FDMS3600, FDMS360, FDMS36, FDMS3, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Transistor MOSFET Array Dual N-CH 25V 65A/155A 8-Pin PQFN T/R - Tape and Reel
***el Electronic
RICHTEK RT9711AGBGPower Load Switch, High Side, Active High, 1 Output, 5.5V, 2.5A, SOT-23-5
***emi
PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET
***ure Electronics
Dual N-Channel 25 V 8.5/2.4 mOhm 27/82 nC 2.2/2.5 W Mosfet - POWER 56-8
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.
***(Formerly Allied Electronics)
SIS430DN-T1-GE3 N-channel MOSFET Transistor; 21 A; 25 V; 8-Pin PowePAK 1212
***et
Trans MOSFET N-CH 25V 21.5A 8-Pin PowerPAK 1212 T/R
***i-Key
MOSFET N-CH 25V 35A PPAK 1212-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 21.5A I(D), 25V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***S
French Electronic Distributor since 1988
***Yang
Transistor MOSFET Array Dual N-Channel 25V 15A/26A 8-Pin PQFN T/R - Tape and Reel
***emi
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 25V
***ical
Trans MOSFET N-CH Si 25V 15A/26A 8-Pin Power 56 EP T/R
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
***emi
PowerTrench® MOSFET, N-Channel, 25V, 35A, 4.0mΩ
***ment14 APAC
N CHANNEL MOSFET, 25V, 35A TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Source Voltage Vds:25V; On Resistance
***r Electronics
Power Field-Effect Transistor, 35A I(D), 25V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed.
***et
Transistor MOSFET N-CH 20V 35A 8-Pin PowerPAK SO
***ponent Sense
MOSFET SIR410DP SO8FL N 0.0063R 20V 35A
***ure Electronics
N-CH POWERPAK SO-8 BWL 20V 4.8 MOHM@10V- LEAD(PB) AND HALOGEN FREE
***ment14 APAC
MOSFET, N-CH, 20V, 35A, POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:20V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:35A; Power Dissipation Pd:36W; Voltage Vgs Max:20V
***ure Electronics
Single N-Channel 20 V 0.0048 Ohm 52 W SMT Power Mosfet - PowerPAK-1212-8
***enic
20V 35A 4.8m´Î@10V20A 3.8W 2.5V@250Ã×A N Channel PowerPAK 1212-8 MOSFETs ROHS
***ical
Trans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R
***i-Key
MOSFET N-CH 20V 35A PPAK 1212-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 22A I(D), 20V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N-CH, 20V, 35A, POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:20V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:35A; Power Dissipation Pd:5.2W; Voltage Vgs Max:20V
***et Japan
Transistor MOSFET Array Dual N-Channel 25V 16A/31A 8-Pin TISON T/R
***ark
Mosfet, Dual N-Ch, 25V, 40A, Tison-8; Transistor Polarity:dual N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(On):0.0035Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Rohs Compliant: Yes
***ineon SCT
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package, PG-TISON-8, RoHS
***ineon
With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Reduce power losses and increase efficiency for all load conditions; Save space with smallest packages like CanPAK, S3O8 or system in package solution; Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in | Target Applications: Onboard charger; Mainboard; Notebook; DC-DC; VRD/VRM; LED; Motor control
型号 制造商 描述 库存 价格
FDMS3600AS
DISTI # FDMS3600ASCT-ND
ON SemiconductorMOSFET 2N-CH 25V 15A/30A 8-PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    FDMS3600AS
    DISTI # FDMS3600ASDKR-ND
    ON SemiconductorMOSFET 2N-CH 25V 15A/30A 8-PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      FDMS3600AS
      DISTI # FDMS3600ASTR-ND
      ON SemiconductorMOSFET 2N-CH 25V 15A/30A 8-PQFN
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 3000:$0.8197
      FDMS3600AS
      DISTI # FDMS3600AS
      ON SemiconductorTrans MOSFET N-CH 25V 15A/30A 8-Pin PQFN T/R - Bulk (Alt: FDMS3600AS)
      Min Qty: 313
      Container: Bulk
      Americas - 0
        FDMS3600AS
        DISTI # FDMS3600AS
        ON SemiconductorTrans MOSFET N-CH 25V 15A/30A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS3600AS)
        RoHS: Compliant
        Min Qty: 3000
        Container: Reel
        Americas - 0
        • 3000:$0.9409
        • 6000:$0.9349
        • 12000:$0.9229
        • 18000:$0.9109
        • 30000:$0.8879
        FDMS3600AS
        DISTI # 68X0374
        ON SemiconductorDUAL N-CH. ER TRENCH MO / REEL0
        • 1:$1.1100
        FDMS3600AS
        DISTI # 512-FDMS3600AS
        ON SemiconductorMOSFET DUAL N-CH. ER TRENCH MO
        RoHS: Compliant
        0
        • 1:$1.6200
        • 10:$1.3800
        • 100:$1.1000
        • 500:$0.9670
        • 1000:$0.8010
        • 3000:$0.7460
        • 6000:$0.7180
        • 9000:$0.6900
        FDMS3600ASFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 15A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant
        12385
        • 1000:$1.0500
        • 500:$1.1100
        • 100:$1.1500
        • 25:$1.2000
        • 1:$1.3000
        图片 型号 描述
        FDMS3622S

        Mfr.#: FDMS3622S

        OMO.#: OMO-FDMS3622S

        MOSFET PowerStage 25V Dual N-Channel MOSFET
        FDMS3626S

        Mfr.#: FDMS3626S

        OMO.#: OMO-FDMS3626S

        MOSFET 25V Dual N-Channel MOSFET
        FDMS3500

        Mfr.#: FDMS3500

        OMO.#: OMO-FDMS3500

        MOSFET 75V N-Channel PowerTrench
        FDMS3620S

        Mfr.#: FDMS3620S

        OMO.#: OMO-FDMS3620S

        MOSFET 25V Asymtrc Dual NCh MOSFET PowerTrench
        FDMS3615S

        Mfr.#: FDMS3615S

        OMO.#: OMO-FDMS3615S

        MOSFET DUAL N-Channel PowerTrench MOSFET
        FDMS3602S

        Mfr.#: FDMS3602S

        OMO.#: OMO-FDMS3602S

        MOSFET 25V Dual N-Channel PowerTrench MOSFET
        FDMS3616S

        Mfr.#: FDMS3616S

        OMO.#: OMO-FDMS3616S

        MOSFET 25V Asymmetric 2xNCh MOSFET PowerTrench
        FDMS3006SDC

        Mfr.#: FDMS3006SDC

        OMO.#: OMO-FDMS3006SDC-ON-SEMICONDUCTOR

        MOSFET N-CH 30V 34A 8-PQFN
        FDMS3602S_P

        Mfr.#: FDMS3602S_P

        OMO.#: OMO-FDMS3602S-P-1190

        Trans MOSFET N-CH 25V 30A/40A 8-Pin PQFN T/R (Alt: FDMS3602S-P)
        FDMS3668S

        Mfr.#: FDMS3668S

        OMO.#: OMO-FDMS3668S-ON-SEMICONDUCTOR

        MOSFET 2N-CH 30V 13A/18A 8-PQFN
        可用性
        库存:
        Available
        订购:
        1986
        输入数量:
        FDMS3600AS的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格(美元)
        数量
        单价
        小计金额
        1
        US$1.60
        US$1.60
        10
        US$1.36
        US$13.60
        100
        US$1.08
        US$108.00
        500
        US$0.95
        US$476.00
        1000
        US$0.79
        US$788.00
        由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
        从...开始
        最新产品
        Top