STGW50H60DF

Mfr. #:: STGW50H60DF
制造商:: STMicroelectronics
描述:: IGBT Transistors 50A 600V FST IGBT Ultrafast Diode
生命周期:: 制造商新产品。
数据表:: STGW50H60DF 数据表
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更多信息:: STGW50H60DF 更多信息 STGW50H60DF Product Details

产品属性
属性值

制造商: 意法半导体

产品分类: IGBT - 单

系列: 600-650V IGBTs

打包: 管子

单位重量: 0.229281 oz

安装方式: 通孔

包装盒: TO-247-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-247

最大功率: 360W

反向恢复时间trr: 55ns

电流收集器 Ic-Max: 100A

电压收集器发射极击穿最大值: 600V

IGBT型: 海沟场停止

电流收集器脉冲Icm: 200A

Vce-on-Max-Vge-Ic: 1.8V @ 15V, 50A

开关能源: 890μJ (on), 860μJ (off)

栅极电荷: 217nC

Td-on-off-25°C: 62ns/178ns

测试条件: 400V, 50A, 10 Ohm, 15V

钯功耗: 360 W

最高工作温度: + 150 C

最低工作温度: - 55 C

集电极-发射极-饱和-电压: 1.8 V

25-C 时的连续集电极电流: 100 A

栅极-发射极-漏电流: 250 nA

最大栅极发射极电压: +/- 20 V

Tags: STGW50H, STGW5, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGW50H60DF 描述

***ical: Trans IGBT Chip N-CH 600V 100A 360000mW 3-Pin(3+Tab) TO-247 Tube

***icroelectronics: 50 A, 600 V field stop trench gate IGBT with Ultrafast diode

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247

***et: STMICROELECTRONICS STGW50H60DF IGBTS

Market price

型号	制造商	描述	库存	价格
STGW50H60DF DISTI # V79:2366_17797792	STMicroelectronics	Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	167	100:$2.9520 25:$3.1330 10:$3.4360 1:$3.7870
STGW50H60DF DISTI # 497-12423-ND	STMicroelectronics	IGBT 600V 100A 360W TO247 RoHS: Compliant Min Qty: 600 Container: Tube	Limited Supply - Call
STGW50H60DF DISTI # 26119791	STMicroelectronics	Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	167	100:$2.9520 25:$3.1330 10:$3.4360 4:$3.7870
STGW50H60DF DISTI # 511-STGW50H60DF	STMicroelectronics	IGBT Transistors 50A 600V FST IGBT Ultrafast Diode RoHS: Compliant	0
STGW50H60DF DISTI # STGW50H60DF	STMicroelectronics	600V 100A 360W TO247 RoHS: Not Compliant	0	5:€3.2000 30:€2.6000 120:€2.4000 300:€2.3200
STGW50H60DF	STMicroelectronics	Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247 RoHS: Compliant	Europe - 300
STGW50H60DF	STMicroelectronics		514

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