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STGWA25H120DF2

STGWA25H120DF2
Mfr. #:
STGWA25H120DF2
制造商:
STMicroelectronics
描述:
IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
生命周期:
制造商新产品。
数据表:
STGWA25H120DF2 数据表
交货:
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支付:
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ECAD Model:
更多信息:
STGWA25H120DF2 更多信息 STGWA25H120DF2 Product Details
产品属性
属性值
制造商：
意法半导体
产品分类：
IGBT晶体管
技术：
硅
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
1200 V
集电极-发射极饱和电压：
2.5 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
50 A
Pd - 功耗：
375 W
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
系列：
STGWA25H120DF2
品牌：
意法半导体
连续集电极电流：
25 A
栅极-发射极漏电流：
250 nA
产品类别：
IGBT晶体管
出厂包装数量：
600
子类别：
IGBT
单位重量：
0.215171 oz
Tags
STGWA25, STGWA2, STGWA, STGW, STG
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***i-Key
IGBT HB 1200V 25A HS TO247-3
***et Europe
IGBT & POWER BIPOLAR
***ark
Ptd High Voltage
IGBT H Series
STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (Vce(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
型号 制造商 描述 库存 价格
STGWA25H120DF2
DISTI # 30608543		STMicroelectronicsIGBT HB 1200V 25A HS TO247-310
  • 5:$6.0818
STGWA25H120DF2
DISTI # 497-15548-5-ND		STMicroelectronicsIGBT HB 1200V 25A HS TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		34In Stock
  • 510:$5.2405
  • 120:$6.0182
  • 30:$6.9310
  • 10:$7.2690
  • 1:$8.0500
STGWA25H120DF2
DISTI # V36:1790_06560799		STMicroelectronicsIGBT HB 1200V 25A HS TO247-30
    STGWA25H120DF2
    DISTI # STGWA25H120DF2    		STMicroelectronicsIGBT & POWER BIPOLAR - Rail/Tube (Alt: STGWA25H120DF2)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Americas - 0
    • 3000:$4.0900
    • 6000:$4.0900
    • 1800:$4.2900
    • 1200:$4.5900
    • 600:$4.7900
    STGWA25H120DF2
    DISTI # 26Y5795    		STMicroelectronicsPTD HIGH VOLTAGE0
    • 500:$4.1900
    • 250:$4.3200
    • 100:$5.1600
    • 50:$5.5400
    • 25:$5.9300
    • 10:$6.5100
    • 1:$7.2500
    STGWA25H120DF2
    DISTI # 511-STGWA25H120DF2    		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed117
    • 1:$7.6600
    • 10:$6.9200
    • 25:$6.6000
    • 100:$5.7300
    • 250:$5.4700
    • 500:$4.9900
    • 1000:$4.3400
    STGWA25H120DF2STMicroelectronicsInsulated Gate Bipolar Transistor
    RoHS: Compliant    		600
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      可用性
      库存:
      733
      订购:
      2716
      输入数量:
      STGWA25H120DF2的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$7.66
      US$7.66
      10
      US$6.92
      US$69.20
      25
      US$6.60
      US$165.00
      100
      US$5.73
      US$573.00
      250
      US$5.47
      US$1 367.50
      500
      US$4.99
      US$2 495.00
      1000
      US$4.34
      US$4 340.00
      2500
      US$4.18
      US$10 450.00
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