STGWT60H65DFB

Mfr. #:: STGWT60H65DFB
制造商:: STMicroelectronics
描述:: IGBT 650V 80A 375W TO3P-3L
生命周期:: 制造商新产品。
数据表:: STGWT60H65DFB 数据表
交货:: DHL FedEx Ups TNT EMS
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更多信息:: STGWT60H65DFB 更多信息 STGWT60H65DFB Product Details

产品属性
属性值

制造商: 意法半导体

产品分类: IGBT - 单

系列: 600-650V IGBTs

打包: 管子

单位重量: 0.238311 oz

安装方式: 通孔

包装盒: TO-3P-3, SC-65-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-3P

配置: 单身的

最大功率: 375W

反向恢复时间trr: 60ns

电流收集器 Ic-Max: 80A

电压收集器发射极击穿最大值: 650V

IGBT型: 海沟场停止

电流收集器脉冲Icm: 240A

Vce-on-Max-Vge-Ic: 2V @ 15V, 60A

开关能源: 1.09mJ (on), 626μJ (off)

栅极电荷: 306nC

Td-on-off-25°C: 51ns/160ns

测试条件: 400V, 60A, 5 Ohm, 15V

钯功耗: 375 W

最高工作温度: + 175 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 650 V

集电极-发射极-饱和-电压: 1.6 V

25-C 时的连续集电极电流: 80 A

栅极-发射极-漏电流: 250 nA

最大栅极发射极电压: +/- 20 V

连续集电极电流 Ic-Max: 60 A

Tags: STGWT60H65D, STGWT60H65, STGWT60H, STGWT6, STGWT, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGWT60H65DFB 描述

***ical: Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-3P Tube

***ure Electronics: STGWT60H65DFB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - TO-3P

***va Crawler: Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

***Components: In a Tube of 30, STMicroelectronics STGWT60H65DFB IGBT

***p One Stop Global: Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P Tube

***et Europe: Trans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube

***ied Electronics & Automation: IGBT Trench HB Series 650V 60A TO-3P

***i-Key: IGBT 650V 80A 375W TO3P-3L

***ark: Ptd High Voltage

STGWT60H65DFB 更多信息

IGBT HB/HB2 Series: STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.

Market price

型号	制造商	描述	库存	价格
STGWT60H65DFB DISTI # V79:2366_17794153	STMicroelectronics	Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P Tube RoHS: Compliant	3	2500:$2.4850 1000:$2.6420 500:$3.1589 250:$3.5510 100:$3.7790 10:$4.3940 1:$5.2009
STGWT60H65DFB DISTI # V99:2348_17652447	STMicroelectronics	Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P Tube RoHS: Compliant	0
STGWT60H65DFB DISTI # 497-14232-5-ND	STMicroelectronics	IGBT 650V 80A 375W TO3P-3L RoHS: Compliant Min Qty: 1 Container: Tube	On Order	2520:$2.8000 1020:$2.9400 510:$3.4860 120:$4.0950 30:$4.7250 1:$5.5700
STGWT60H65DFB DISTI # STGWT60H65DFB	STMicroelectronics	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT60H65DFB) RoHS: Compliant Min Qty: 300 Container: Tube	Americas - 0	300:$2.8900 600:$2.7900 1200:$2.6900 1800:$2.5900 3000:$2.4900
STGWT60H65DFB DISTI # STGWT60H65DFB	STMicroelectronics	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube (Alt: STGWT60H65DFB) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€3.1900 10:€2.8900 25:€2.7900 50:€2.6900 100:€2.5900 500:€2.4900 1000:€2.2900
STGWT60H65DFB DISTI # 40X8769	STMicroelectronics	PTD HIGH VOLTAGE	0	25:$2.6600 10:$2.7600 5:$2.9000 1:$3.2000
STGWT60H65DFB DISTI # 511-STGWT60H65DFB	STMicroelectronics	IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT RoHS: Compliant	3044	1:$5.2900 10:$4.5000 100:$3.9000 250:$3.7000 500:$3.3200 1000:$2.8000 2500:$2.6600
STGWT60H65DFB DISTI # 8294666P	STMicroelectronics	IGBT TRENCH HB SERIES 650V 60A TO-3P, TU	289	20:£3.1900 10:£3.2500

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