SI3590DV-T1-E3

Mfr. #:: SI3590DV-T1-E3
制造商:: Vishay
描述:: MOSFET N/P-CH 30V 2.5A 6TSOP
生命周期:: 制造商新产品。
数据表:: SI3590DV-T1-E3 数据表
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更多信息:: SI3590DV-T1-E3 更多信息

产品属性
属性值

制造商: 威世

产品分类: FET - 阵列

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SI3590DV-T1

单位重量: 0.000705 oz

安装方式: 贴片/贴片

包装盒: SOT-23-6 Thin, TSOT-23-6

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: 6-TSOP

配置: 1 N-Channel 1 P-Channel

FET型: N 和 P 沟道

最大功率: 830mW

晶体管型: 1 N-Channel 1 P-Channel

漏源电压 Vdss: 30V

输入电容-Ciss-Vds: -

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 2.5A, 1.7A

Rds-On-Max-Id-Vgs: 77 mOhm @ 3A, 4.5V

Vgs-th-Max-Id: 1.5V @ 250μA

栅极电荷-Qg-Vgs: 4.5nC @ 4.5V

钯功耗: 830 mW

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 12 ns 15 ns

上升时间: 12 ns 15 ns

VGS-栅极-源极-电压: 12 V

Id 连续漏极电流: 2.5 A

Vds-漏-源-击穿电压: 30 V

Rds-On-Drain-Source-Resistance: 77 mOhms 170 mOhms

晶体管极性: N 沟道 P 沟道

典型关断延迟时间: 13 ns 20 ns

典型开启延迟时间: 5 ns

通道模式: 增强

Tags: SI3590DV-T, SI3590D, SI359, SI35, SI3

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3590DV-T1-E3 描述

***ure Electronics: Dual N / P -Channel 30 V 0.077/0.17 Ohm Surface Mount Power MosFet - TSOP-6

***ical: Trans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R

***ark: Transistor Polarity:n And P Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.062Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:600Mv; Power Dissipation Pd:830Mw Rohs Compliant: No

SI3590DV-T1-E3 更多信息

Si3 MOSFETs: Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

型号	制造商	描述	库存	价格
SI3590DV-T1-E3 DISTI # V72:2272_09216704	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R RoHS: Compliant	3000	3000:$0.2921 1000:$0.3317 500:$0.3936 250:$0.5178 100:$0.5225 25:$0.6114 10:$0.7472 1:$0.8490
SI3590DV-T1-E3 DISTI # V36:1790_09216704	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R RoHS: Compliant	0
SI3590DV-T1-E3 DISTI # SI3590DV-T1-E3CT-ND	Vishay Siliconix	MOSFET N/P-CH 30V 2.5A 6TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	46327In Stock	1000:$0.2769 500:$0.3461 100:$0.4378 10:$0.5710 1:$0.6500
SI3590DV-T1-E3 DISTI # SI3590DV-T1-E3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 30V 2.5A 6TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	46327In Stock	1000:$0.2769 500:$0.3461 100:$0.4378 10:$0.5710 1:$0.6500
SI3590DV-T1-E3 DISTI # SI3590DV-T1-E3TR-ND	Vishay Siliconix	MOSFET N/P-CH 30V 2.5A 6TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	42000In Stock	15000:$0.2240 6000:$0.2268 3000:$0.2436
SI3590DV-T1-E3 DISTI # 33138108	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R RoHS: Compliant	6000	3000:$0.3217
SI3590DV-T1-E3 DISTI # 33135520	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R RoHS: Compliant	3000	3000:$0.3110 1000:$0.3467 500:$0.4306 250:$0.4855 100:$0.5394 27:$0.7157
SI3590DV-T1-E3 DISTI # SI3590DV-T1-E3	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3590DV-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.2464 18000:$0.2532 12000:$0.2604 6000:$0.2715 3000:$0.2798
SI3590DV-T1-E3 DISTI # SI3590DV-T1-E3	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R (Alt: SI3590DV-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.3489 18000:€0.3749 12000:€0.4059 6000:€0.4719 3000:€0.6929
SI3590DV-T1-E3 DISTI # 65K2703	Vishay Intertechnologies	NPN & PNP MOSFET, 30V, 2A, TSOP,Transistor Polarity:N and P Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.062ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:600mV RoHS Compliant: Yes	0	2500:$0.3960 1000:$0.5000 500:$0.5690 250:$0.6630 100:$0.7460 50:$0.8420 25:$0.9250 1:$1.0300
SI3590DV-T1-E3 DISTI # 06J7626	Vishay Intertechnologies	MOSFET, N & P CHANNEL, 30V, 0.062OHM, 2.5A, TSOP-6, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.062ohm,Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes	0	50000:$0.2970 30000:$0.3110 20000:$0.3340 10000:$0.3570 5000:$0.3870 1:$0.3960
SI3590DV-T1-E3. DISTI # 15AC4252	Vishay Intertechnologies	Transistor Polarity:N and P Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.062ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mV,Power Dissipation Pd:830mW RoHS Compliant: No	0	50000:$0.2970 30000:$0.3110 20000:$0.3340 10000:$0.3570 5000:$0.3870 1:$0.3960
SI3590DV-T1-E3 DISTI # 70459524	Vishay Siliconix	MOSFET N/P-CH 30V 2.5A 6TSOP RoHS: Compliant	0	3000:$0.4830 6000:$0.4740
SI3590DV-T1-E3 DISTI # 781-SI3590DV-T1-E3	Vishay Intertechnologies	MOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR RoHS: Compliant	45296	1:$0.9100 10:$0.7330 100:$0.5560 500:$0.4600 1000:$0.3680 3000:$0.3330 6000:$0.3100 9000:$0.2990
SI3590DV-T1-E3	Vishay Intertechnologies	MOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR RoHS: Compliant	Americas - 3000	3000:$0.2790 6000:$0.2650 12000:$0.2570 18000:$0.2500
SI3590DV-T1-E3	Vishay Semiconductors		0

图片	型号	描述
	Mfr.#: SI3590DV-T1-E3 OMO.#: OMO-SI3590DV-T1-E3	MOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR
	Mfr.#: SI3590DV-T1-GE3 OMO.#: OMO-SI3590DV-T1-GE3	MOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR
	Mfr.#: SI3590DV OMO.#: OMO-SI3590DV-1190	全新原装
	Mfr.#: SI3590DV-T1 OMO.#: OMO-SI3590DV-T1-1190	全新原装
	Mfr.#: SI3590DV-T1-E3 OMO.#: OMO-SI3590DV-T1-E3-VISHAY	MOSFET N/P-CH 30V 2.5A 6TSOP
	Mfr.#: SI3590DV-T1-GE3 OMO.#: OMO-SI3590DV-T1-GE3-VISHAY	MOSFET N/P-CH 30V 2.5A 6-TSOP
	Mfr.#: SI3590DV-T1-E3-CUT TAPE OMO.#: OMO-SI3590DV-T1-E3-CUT-TAPE-1190	全新原装

SI3590DV-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes