TGF2977-SM

TGF2977-SM
Mfr. #:
TGF2977-SM
制造商:
Qorvo
描述:
RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB
生命周期:
制造商新产品。
数据表:
TGF2977-SM 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
TGF2977-SM 更多信息
产品属性
属性值
制造商:
科沃
产品分类:
射频 JFET 晶体管
RoHS:
Y
晶体管类型:
HEMT
技术:
氮化镓碳化硅
获得:
13 dB
晶体管极性:
N通道
Vds - 漏源击穿电压:
32 V
Vgs - 栅源击穿电压:
- 2.7 V
Id - 连续漏极电流:
326 mA
输出功率:
6 W
最高工作温度:
+ 225 C
Pd - 功耗:
8.4 W
安装方式:
贴片/贴片
包装/案例:
QFN-16
打包:
托盘
配置:
单身的
高度:
0.203 mm
长度:
3 mm
工作频率:
DC to 12 GHz
类型:
氮化镓碳化硅 HEMT
宽度:
3 mm
品牌:
科沃
通道数:
1 Channel
开发套件:
TGF2977-SMEVB1
湿气敏感:
是的
产品类别:
射频 JFET 晶体管
出厂包装数量:
50
子类别:
晶体管
第 # 部分别名:
1127257
单位重量:
0.002014 oz
Tags
TGF297, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC - 12 GHz, 5 W, 13 dB, 32V, GaN, Plastic QFN
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF297x GaN RF Transistor
Qorvo TGF297x GaN RF Transistors have a frequency range of DC to 12GHz. The TGF2970 transistors offer output power from 6W up to 22W. The TGF2970 transistors are constructed using a TQGaN25 process, which features field plate techniques to optimize power and efficiency at high drain bias operation. Learn More
型号 制造商 描述 库存 价格
TGF2977-SM
DISTI # 772-TGF2977-SM
QorvoRF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB
RoHS: Compliant
266
  • 1:$24.1500
  • 25:$20.8900
  • 100:$18.0700
  • 250:$16.8000
  • 500:$15.6200
TGF2977-SM-EVB
DISTI # 772-TGF2977-SM-EVB
QorvoRF Development Tools
RoHS: Compliant
0
  • 1:$875.0000
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可用性
库存:
263
订购:
2246
输入数量:
TGF2977-SM的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$24.15
US$24.15
25
US$20.89
US$522.25
100
US$18.07
US$1 807.00
250
US$16.80
US$4 200.00
500
US$15.62
US$7 810.00
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