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T1G4004532-FS

T1G4004532-FS
Mfr. #:
T1G4004532-FS
制造商:
Qorvo
描述:
RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
生命周期:
制造商新产品。
数据表:
T1G4004532-FS 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
T1G4004532-FS 更多信息
产品属性
属性值
制造商：
科沃
产品分类：
射频 JFET 晶体管
RoHS：
Y
技术：
氮化镓碳化硅
Vds - 漏源击穿电压：
32 V
Vgs - 栅源击穿电压：
100 V
Pd - 功耗：
45 W
安装方式：
贴片/贴片
打包：
托盘
配置：
单身的
高度：
4.064 mm
长度：
9.652 mm
宽度：
5.842 mm
品牌：
科沃
栅源截止电压：
- 2.9 V
湿气敏感：
是的
产品类别：
射频 JFET 晶体管
出厂包装数量：
50
子类别：
晶体管
第 # 部分别名：
1092444
Tags
T1G4004, T1G400, T1G4, T1G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 3.5 GHz, 45 W, 19 dB, 32V, GaN
T1G4004532 GaN RF Power Transistors
Qorvo T1G4004532 GaN RF Power Transistors are 45W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5GHz. The device is constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
型号 制造商 描述 库存 价格
T1G4004532-FS
DISTI # 772-T1G4004532-FS		QorvoRF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
RoHS: Compliant		37
  • 1:$220.0000
  • 25:$198.5500
T1G4004532-FS-EVB1
DISTI # 772-T1G4004532-FS-EB		QorvoRF Development Tools DC-35.GHz GaN Eval Board
RoHS: Compliant		2
  • 1:$875.0000
图片 型号 描述
T1G4004532-FS

Mfr.#: T1G4004532-FS

OMO.#: OMO-T1G4004532-FS

 RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
T1G4004532-FL

Mfr.#: T1G4004532-FL

OMO.#: OMO-T1G4004532-FL

 RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
T1G4004532-FL

Mfr.#: T1G4004532-FL

OMO.#: OMO-T1G4004532-FL-318

 RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
T1G4004532-FS

Mfr.#: T1G4004532-FS

OMO.#: OMO-T1G4004532-FS-318

 RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
T1G40020036-FL

Mfr.#: T1G40020036-FL

OMO.#: OMO-T1G40020036-FL-1190

 全新原装
T1G4003532

Mfr.#: T1G4003532

OMO.#: OMO-T1G4003532-1190

 全新原装
T1G4003532-FL

Mfr.#: T1G4003532-FL

OMO.#: OMO-T1G4003532-FL-1152

 RF JFET Transistors DC-3.5GHz 35Watt 32Volt GaN
T1G4003532-FS

Mfr.#: T1G4003532-FS

OMO.#: OMO-T1G4003532-FS-1152

 RF JFET Transistors DC-3.5GHz 35Watt 32Volt GaN
T1G4004532-FS-EVB1

Mfr.#: T1G4004532-FS-EVB1

OMO.#: OMO-T1G4004532-FS-EVB1-1152

 RF Development Tools DC-35.GHz GaN Eval Board
T1G4005528-FS-EVB1

Mfr.#: T1G4005528-FS-EVB1

OMO.#: OMO-T1G4005528-FS-EVB1-1152

 RF Development Tools DC-3.5GHz 28Volt Eval Board
可用性
库存:
37
订购:
2020
输入数量:
T1G4004532-FS的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$220.00
US$220.00
25
US$198.55
US$4 963.75
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