OMO ElectronicOMO Electronic
Expand menu
您好，登录我的帐户
0 购物车

STGB6NC60HT4

STGB6NC60HT4
Mfr. #:
STGB6NC60HT4
制造商:
STMicroelectronics
描述:
IGBT Transistors PowerMESH TM IGBT
生命周期:
制造商新产品。
数据表:
STGB6NC60HT4 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
STGB6NC60HT4 DatasheetSTGB6NC60HT4 Datasheet (P4-P6)STGB6NC60HT4 Datasheet (P7-P9)STGB6NC60HT4 Datasheet (P10-P12)STGB6NC60HT4 Datasheet (P13-P14)
ECAD Model:
更多信息:
STGB6NC60HT4 更多信息 STGB6NC60HT4 Product Details
产品属性
属性值
制造商：
意法半导体
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
D2PAK-3
安装方式：
贴片/贴片
配置：
单身的
集电极-发射极电压 VCEO 最大值：
600 V
集电极-发射极饱和电压：
2.7 V
最大栅极发射极电压：
20 V
Pd - 功耗：
80 W
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
系列：
STGB6NC60H
打包：
卷轴
连续集电极电流 Ic 最大值：
15 A
高度：
4.6 mm
长度：
10.4 mm
宽度：
9.35 mm
品牌：
意法半导体
连续集电极电流：
12 A
栅极-发射极漏电流：
100 nA
产品类别：
IGBT晶体管
出厂包装数量：
1000
子类别：
IGBT
单位重量：
0.079014 oz
Tags
STGB6NC60H, STGB6N, STGB6, STGB, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Trans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) D2PAK T/R
***ser
IGBTs Insulated Gate Bipolar Transistor PowerMESH TM IGBT
***r Electronics
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors PowerMESH TM IGBT
***nell
IGBT, SMD, 600V, 7A, D2-PAK; Transistor Type:PowerMESH; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:15A; Voltage, Vce Sat Max:2.5V; Power Dissipation:56W; Case Style:D2-PAK; Termination Type:SMD; Current, Icm Pulsed:21A; No. of Pins:3; Time, Fall:76ns; Time, Rise:5ns
***ical
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) D2PAK T/R
***icroelectronics
14 A, 600 V short-circuit rugged IGBT
*** Source Electronics
IGBT 600V 25A 80W D2PAK / N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT
***icroelectronics SCT
Short-circuit rugged IGBT, D2PAK, Tape and Reel
***r Electronics
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***(Formerly Allied Electronics)
IGBT, N-CHANNEL 600V 25A, D2PAK
*** Electronic Components
IGBT Transistors PowerMESH" IGBT
***nell
IGBT, SMD, 600V, 14A, D2-PAK; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: -; Transistor Case Style: TO-263; No. of Pins: 3Pins;
***roFlash
Trans IGBT Chip N-CH 600V 25A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel
***icroelectronics
New short circuit rugged "K" series
***nell
IGBT, SMD, 600V, 14A, D2-PAK; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: -; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 25A; Fall Time tf: 75ns; Pulsed Current Icm: 50A; Rise Time: 8.5ns; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Transistor Type: Power IGBT; Voltage Vces: 600V
*** Source Electronics
Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(2+Tab) D2PAK T/R / IGBT 600V 20A 65W D2PAK
***Parts
IGBTs - Single, Transistors N-Channel, D2PAK 20A 600V 65W Surface Mount
***nell
IGBT, SMD, 600V, 10A, D2-PAK; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 20A; Fall Time tf: 82ns; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 60W; Pulsed Current Icm: 30A; Rise Time: 6ns; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
***ical
Trans IGBT Chip N=-CH 600V 14A 83000mW 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***emi
IGBT, 600V, 7A, Short Circuit Rated
***el Electronic
IGBT Transistors 600V 7A NPT IGBT
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential.
***et
Trans IGBT Chip N-CH 600V 10A 3-Pin(2+Tab) D2PAK Rail
***rchild Semiconductor
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC, motor control and home appliances.
***nell
IGBT, SINGLE, 600V, 10A, TO-263AB; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 73.5W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ical
Trans IGBT Chip N=-CH 600V 40A 208000mW 3-Pin(2+Tab) D2PAK T/R
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,600V,20A,D2PAK; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:208W
型号 制造商 描述 库存 价格
STGB6NC60HT4
DISTI # 497-5111-1-ND		STMicroelectronicsIGBT 600V 15A 56W D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1474In Stock
  • 500:$1.1526
  • 100:$1.4029
  • 10:$1.7450
  • 1:$1.9400
STGB6NC60HT4
DISTI # 497-5111-6-ND		STMicroelectronicsIGBT 600V 15A 56W D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1474In Stock
  • 500:$1.1526
  • 100:$1.4029
  • 10:$1.7450
  • 1:$1.9400
STGB6NC60HT4
DISTI # 497-5111-2-ND		STMicroelectronicsIGBT 600V 15A 56W D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 1000:$0.9272
STGB6NC60HT4
DISTI # STGB6NC60HT4		STMicroelectronicsTrans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) D2PAK T/R (Alt: STGB6NC60HT4)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
    STGB6NC60HT4
    DISTI # 511-STGB6NC60HT4    		STMicroelectronicsIGBT Transistors PowerMESH TM IGBT
    RoHS: Compliant    		0
      图片 型号 描述
      STGB6NC60HDT4

      Mfr.#: STGB6NC60HDT4

      OMO.#: OMO-STGB6NC60HDT4

      		 IGBT Transistors PowerMESH TM IGBT
      STGB6NC60HD-1

      Mfr.#: STGB6NC60HD-1

      OMO.#: OMO-STGB6NC60HD-1

      		 IGBT Transistors N Ch 6A 600V
      STGB6NC60HT4

      Mfr.#: STGB6NC60HT4

      OMO.#: OMO-STGB6NC60HT4

      		 IGBT Transistors PowerMESH TM IGBT
      STGB6NC60HDT4

      Mfr.#: STGB6NC60HDT4

      OMO.#: OMO-STGB6NC60HDT4-STMICROELECTRONICS

      		 IGBT 600V 15A 56W D2PAK
      STGB6NC60

      Mfr.#: STGB6NC60

      OMO.#: OMO-STGB6NC60-1190

      		 全新原装
      STGB6NC60HD

      Mfr.#: STGB6NC60HD

      OMO.#: OMO-STGB6NC60HD-1190

      		 全新原装
      STGB6NC60HD-1

      Mfr.#: STGB6NC60HD-1

      OMO.#: OMO-STGB6NC60HD-1-STMICROELECTRONICS

      		 IGBT 600V 15A 56W I2PAK
      STGB6NC60HDT4,GB6NC60HD,

      Mfr.#: STGB6NC60HDT4,GB6NC60HD,

      OMO.#: OMO-STGB6NC60HDT4-GB6NC60HD--1190

      		 全新原装
      STGB6NC60HDT4,GB6NC60HD,6NC60,6N60

      Mfr.#: STGB6NC60HDT4,GB6NC60HD,6NC60,6N60

      OMO.#: OMO-STGB6NC60HDT4-GB6NC60HD-6NC60-6N60-1190

      		 全新原装
      STGB6NC60HT4

      Mfr.#: STGB6NC60HT4

      OMO.#: OMO-STGB6NC60HT4-STMICROELECTRONICS

      		 IGBT 600V 15A 56W D2PAK
      可用性
      库存:
      Available
      订购:
      2000
      输入数量:
      STGB6NC60HT4的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      从...开始
      最新产品
      • MDmesh™ M6 Series 600 V Power MOSFETs
        MDmesh™ M6 Series 600 V Power MOSFETs
        STMicroelectronics’ MDmesh M6 series power MOSFETs in PowerFLAT 5 mm x 6 mm high voltage packages have reduced switching loss and low gate input resistance.
      • LDCL015 Series
        LDCL015 Series
        STMicroelectronics' LDCL015 series are ultra-low drop, capless linear regulators with low noise and low current consumption.
      • Compare STGB6NC60HT4
        Compare STGB6NC60HT4
        STGB6NC60HD vs STGB6NC60HD1 vs STGB6NC60HDT4
      • VNI8200XP Monolithic 8-Channel Driver
        VNI8200XP Monolithic 8-Channel Driver
        STMicroelectronics' monolithic octal driver IC has low supply current and integrated protection features that prevent against overload.
      • Ultra-Low Power Arm® Cortex®-M4 MCUs
        Ultra-Low Power Arm® Cortex®-M4 MCUs
        STMicroelectronics' ultra-low power Arm® Cortex®-M4 MCUs are available in low-pin-count-packages ranging from 32-pin LQFP to 64-pin BGA including 36-pin WLCSP.
      • LSM303C e-compass Accelerometer
        LSM303C e-compass Accelerometer
        STMicroelectronics' LSM303C accelerometers are tiny which helps to save board space. Used for advanced navigation and motion sensitive applications.
      More Newest Products
      Top