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IRF6785MTRPBF

IRF6785MTRPBF
Mfr. #:
IRF6785MTRPBF
制造商:
Infineon / IR
描述:
MOSFET 200V 1 x N-CH HEXFET for Digital Audio
生命周期:
制造商新产品。
数据表:
IRF6785MTRPBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
DirectFET-MZ
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
200 V
Id - 连续漏极电流：
19 A
Rds On - 漏源电阻：
85 mOhms
Vgs - 栅源电压：
20 V
Qg - 门电荷：
26 nC
最低工作温度：
- 40 C
最高工作温度：
+ 150 C
Pd - 功耗：
57 W
配置：
单身的
频道模式：
增强
商品名：
直接场效应晶体管
打包：
卷轴
高度：
0.7 mm
长度：
6.35 mm
晶体管类型：
1 N-Channel
宽度：
5.05 mm
品牌：
英飞凌/红外
秋季时间：
14 ns
产品类别：
MOSFET
上升时间：
8.6 ns
出厂包装数量：
4800
子类别：
MOSFET
典型关断延迟时间：
7.2 ns
典型的开启延迟时间：
6.2 ns
第 # 部分别名：
SP001562032
Tags
IRF67, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 200 V 100 mOhm 36 nC SMT HEXFET® Power Mosfet - DIRECTFET™ MZ
***ineon
Target Applications: Battery Operated Drive; Class D Audio; Load Switch High Side
***ark
MOSET TRANSISTOR; Transistor Type:MOSFET; Continuous Drain Current, Id:3.4A; Drain Source Voltage, Vds:200V; On Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:5V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes
***ernational Rectifier
A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 19 amperes optimized with low on resistance for applications such as Class D Audio Amplifier. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in pa
***(Formerly Allied Electronics)
IRFS4620PBF N-channel MOSFET Transistor, 24 A, 200 V, 3-Pin D2PAK | Infineon IRFS4620PBF
***ure Electronics
Single N-Channel 200 V 77.5 mOhm 25 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK Tube
***icontronic
Power Field-Effect Transistor, 24A I(D), 200V, 0.0775ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH 200V 24A D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.0637ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power D
***ure Electronics
Single N-Channel 200 V 78 mOhm 38 nC HEXFET® Power Mosfet - TO-252AA
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED
*** Source Electronics
MOSFET N-CH 200V 24A DPAK / Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) DPAK T/R
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 24A I(D), 200V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
N Channel Mosfet, 200V, 24A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:24A; On Resistance Rds(On):0.078Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ernational Rectifier
Digital Audio 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
***et
Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R
***(Formerly Allied Electronics)
AUDIO MOSFET, 200V, 24A, 78 MOHM, 25 NC QG, D2PAK
***ark
N CH DIG AUDIO MOSFET, HEXFET, 200V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:200V; On Resistance Rds(on):63.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:144W ;RoHS Compliant: Yes
***emi
N-Channel UltraFET Trench® MOSFET 200V, 20A, 77mΩ
***ure Electronics
FDMS2672 Series 200 V 77 mOhm N-Channel UltraFET Trench Mosfet - Power-56-8
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:3.7A; Drain Source Voltage, Vds:200V; On Resistance, Rds(on):64mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3.1V
***rchild Semiconductor
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
***nell
MOSFET, N, SMD, MLP; Transistor Type:UltraFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:3.7A; Resistance, Rds On:0.077ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3.1V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:20A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS2672; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V
***ure Electronics
Single N-Channel 200 V 0.09 Ohms Surface Mount Power Mosfet - TO-252
***roFlash
Power Field-Effect Transistor, 19A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ment14 APAC
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:200V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:3W; Transistor Case Style:TO-252; No. of Pins:3; Current Id Max:19A; Package / Case:DPAK; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
型号 制造商 描述 库存 价格
IRF6785MTRPBF
DISTI # V72:2272_13890116		Infineon Technologies AGTrans MOSFET N-CH Si 200V 3.4A 7-Pin Direct-FET MZ T/R
RoHS: Compliant		4800
  • 3000:$1.1646
  • 1000:$1.1772
  • 500:$1.4165
  • 250:$1.6050
  • 100:$1.6667
  • 25:$1.8197
  • 10:$2.0219
  • 1:$2.3544
IRF6785MTRPBF
DISTI # IRF6785MTRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 200V 3.4A DIRECTFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4536In Stock
  • 1000:$1.4457
  • 500:$1.7448
  • 100:$2.2433
  • 10:$2.7920
  • 1:$3.0900
IRF6785MTRPBF
DISTI # IRF6785MTRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 200V 3.4A DIRECTFET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4536In Stock
  • 1000:$1.4457
  • 500:$1.7448
  • 100:$2.2433
  • 10:$2.7920
  • 1:$3.0900
IRF6785MTRPBF
DISTI # IRF6785MTRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 200V 3.4A DIRECTFET
RoHS: Compliant
Min Qty: 4800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4800:$1.2584
IRF6785MTRPBF
DISTI # 30702329		Infineon Technologies AGTrans MOSFET N-CH Si 200V 3.4A 7-Pin Direct-FET MZ T/R
RoHS: Compliant		4800
  • 4800:$1.1040
IRF6785MTRPBF
DISTI # 31262058		Infineon Technologies AGTrans MOSFET N-CH Si 200V 3.4A 7-Pin Direct-FET MZ T/R
RoHS: Compliant		4800
  • 3000:$1.1646
  • 1000:$1.1772
  • 500:$1.4165
  • 250:$1.6050
  • 100:$1.6667
  • 25:$1.8197
  • 10:$2.0219
  • 6:$2.3544
IRF6785MTRPBF
DISTI # SP001562032		Infineon Technologies AGTrans MOSFET N-CH 200V 3.4A 7-Pin Direct-FET MZ T/R (Alt: SP001562032)
RoHS: Compliant
Min Qty: 4800
Container: Tape and Reel		Europe - 0
  • 4800:€1.4399
  • 9600:€1.1999
  • 19200:€1.1069
  • 28800:€1.0279
  • 48000:€0.9599
IRF6785MTRPBF
DISTI # 49AC0326		Infineon Technologies AGMOSFET, N-CH, 200V, 19A, DIRECTFET MZ,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes4798
  • 1:$2.5900
  • 10:$2.2000
  • 25:$2.0500
  • 50:$1.9100
  • 100:$1.7600
  • 250:$1.6600
  • 500:$1.5500
  • 1000:$1.2800
IRF6785MTRPBF
DISTI # 70019617		Infineon Technologies AGMOSFET,200V,15A,100 MOHM,26 NC QG,MED CAN
RoHS: Compliant		0
  • 4800:$1.2500
  • 9600:$1.2250
  • 24000:$1.1880
IRF6785MTRPBF
DISTI # 942-IRF6785MTRPBF		Infineon Technologies AGMOSFET 200V 1 x N-CH HEXFET for Digital Audio
RoHS: Compliant		5312
  • 1:$2.5900
  • 10:$2.2000
  • 100:$1.7600
  • 500:$1.5500
  • 1000:$1.2800
  • 2500:$1.1900
  • 4800:$1.1500
IRF6785MTRPBF
DISTI # 2839482		Infineon Technologies AGMOSFET, N-CH, 200V, 19A, DIRECTFET MZ
RoHS: Compliant		4798
  • 1:$2.6700
  • 10:$2.4900
  • 100:$2.2100
  • 250:$2.0900
  • 500:$1.9800
  • 1000:$1.8800
IRF6785MTRPBF
DISTI # 2839482		Infineon Technologies AGMOSFET, N-CH, 200V, 19A, DIRECTFET MZ
RoHS: Compliant		4798
  • 500:£1.1700
  • 250:£1.2600
  • 100:£1.3400
  • 10:£1.6600
  • 1:£2.2100
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可用性
库存:
Available
订购:
1990
输入数量:
IRF6785MTRPBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$2.58
US$2.58
10
US$2.20
US$22.00
100
US$1.76
US$176.00
500
US$1.54
US$770.00
1000
US$1.27
US$1 270.00
2500
US$1.18
US$2 950.00
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