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SIHP180N60E-GE3

SIHP180N60E-GE3
Mfr. #:
SIHP180N60E-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET 600V Vds 30V Vgs TO-220AB
生命周期:
制造商新产品。
数据表:
SIHP180N60E-GE3 数据表
交货:
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支付:
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ECAD Model:
更多信息:
SIHP180N60E-GE3 更多信息
产品属性
属性值
制造商：
威世
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-220AB-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
600 V
Id - 连续漏极电流：
19 A
Rds On - 漏源电阻：
180 mOhms
Vgs th - 栅源阈值电压：
3 V
Vgs - 栅源电压：
30 V
Qg - 门电荷：
22 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
156 W
配置：
单身的
频道模式：
增强
系列：
E
晶体管类型：
1 N-Channel E-Series Power MOSFET
品牌：
威世 / Siliconix
正向跨导 - 最小值：
5.3 S
秋季时间：
23 ns
产品类别：
MOSFET
上升时间：
49 ns
出厂包装数量：
1
子类别：
MOSFET
典型关断延迟时间：
22 ns
典型的开启延迟时间：
14 ns
Tags
SIHP18, SIHP1, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
4th Gen E Series MOSFETs
Vishay Semiconductors 4th Gen E Series MOSFETs are low Figure-Of-Merit (FOM) MOSFETs with E series technology. The 4th Gen E series MOSFETs feature low effective capacitance and reduced switching and conduction losses. These MOSFETs are avalanche energy rated (UIS). The 4th Gen MOSFETs are available in TO-220AB, PowerPAK® SO-8L, PowerPAK® 8 x 8, DPAK (TO-252), and Thin-Lead TO-220 FULLPAK packages. Typical applications include server and telecom power supplies, lighting, industrial, Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) power supplies.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型号 制造商 描述 库存 价格
SIHP180N60E-GE3
DISTI # V99:2348_22712082		Vishay IntertechnologiesE Series Power MOSFET TO-220AB, 180 m @ 10V1000
  • 2500:$1.5550
  • 1000:$1.6280
  • 500:$1.9350
  • 250:$2.0830
  • 100:$2.1269
  • 10:$2.6680
  • 1:$3.4738
SIHP180N60E-GE3
DISTI # SIHP180N60E-GE3-ND		Vishay SiliconixMOSFET N-CH TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		1050In Stock
  • 5000:$1.5711
  • 3000:$1.6325
  • 1000:$1.7184
  • 100:$2.3935
  • 25:$2.7616
  • 10:$2.9210
  • 1:$3.2500
SIHP180N60E-GE3
DISTI # 32654123		Vishay IntertechnologiesE Series Power MOSFET TO-220AB, 180 m @ 10V1000
  • 2500:$1.5550
  • 1000:$1.6280
  • 500:$1.9350
  • 250:$2.0830
  • 100:$2.1269
  • 10:$2.6680
  • 5:$3.4738
SIHP180N60E-GE3
DISTI # SIHP180N60E-GE3		Vishay Intertechnologies- Tape and Reel (Alt: SIHP180N60E-GE3)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$1.3900
  • 4000:$1.4900
  • 6000:$1.4900
  • 2000:$1.5900
  • 1000:$1.6900
SIHP180N60E-GE3
DISTI # 07AH4768		Vishay IntertechnologiesMOSFET, N-CH, 19A, 600V, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes48
  • 2500:$1.5700
  • 1000:$1.6500
  • 500:$1.9600
  • 100:$2.2500
  • 50:$2.4100
  • 25:$2.5800
  • 10:$2.7400
  • 1:$3.3000
SIHP180N60E-GE3
DISTI # 78-SIHP180N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
RoHS: Compliant		1010
  • 1:$3.2700
  • 10:$2.7100
  • 100:$2.2300
  • 250:$2.1600
  • 500:$1.9400
  • 1000:$1.6300
  • 2500:$1.5500
  • 5000:$1.4900
SIHP180N60E-GE3
DISTI # 3019098		Vishay IntertechnologiesMOSFET, N-CH, 19A, 600V, TO-220AB48
  • 500:£1.4500
  • 250:£1.6200
  • 100:£1.6700
  • 10:£2.0200
  • 1:£2.7500
SIHP180N60E-GE3
DISTI # 3019098		Vishay IntertechnologiesMOSFET, N-CH, 19A, 600V, TO-220AB
RoHS: Compliant		48
  • 1000:$2.0700
  • 500:$2.2800
  • 250:$2.4200
  • 100:$2.5300
  • 10:$2.9700
  • 1:$3.7700
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MIC4452YN

Mfr.#: MIC4452YN

OMO.#: OMO-MIC4452YN-MICROCHIP-TECHNOLOGY

 IC DRIVER MOSF 12A LO SIDE 8DIP
TPS54334DDAR

Mfr.#: TPS54334DDAR

OMO.#: OMO-TPS54334DDAR-TEXAS-INSTRUMENTS

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Mfr.#: 1N4148

OMO.#: OMO-1N4148-ON-SEMICONDUCTOR

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NTB110N65S3HF

Mfr.#: NTB110N65S3HF

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可用性
库存:
Available
订购:
1984
输入数量:
SIHP180N60E-GE3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$3.27
US$3.27
10
US$2.71
US$27.10
100
US$2.23
US$223.00
250
US$2.16
US$540.00
500
US$1.94
US$970.00
1000
US$1.63
US$1 630.00
2500
US$1.55
US$3 875.00
5000
US$1.49
US$7 450.00
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