 |  | | |
| PartNumber | SIHP180N60E-GE3 | SIHP18N50C-E3 | SIHP186N60EF-GE3 |
| Description | MOSFET 600V Vds 30V Vgs TO-220AB | MOSFET 500V Vds 30V Vgs TO-220AB | MOSFET Power MOSFET |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | E | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220AB-3 | TO-220AB-3 | TO-220AB-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 500 V | 500 V |
| Id Continuous Drain Current | 19 A | 18 A | 18 A |
| Rds On Drain Source Resistance | 180 mOhms | 225 mOhms | 225 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 5 V | 5 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 22 nC | 65 nC | 65 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 156 W | 223 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Series | E | - | - |
| Transistor Type | 1 N-Channel E-Series Power MOSFET | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 5.3 S | - | - |
| Fall Time | 23 ns | 44 ns | 44 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 49 ns | 27 ns | 27 ns |
| Factory Pack Quantity | 1 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 22 ns | 32 ns | 32 ns |
| Typical Turn On Delay Time | 14 ns | 80 ns | 80 ns |
| Packaging | - | Tube | - |
| Unit Weight | - | 0.211644 oz | - |
| Tradename | - | - | TrenchFET |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHP180N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | |
| SIHP18N50C-E3 | MOSFET 500V Vds 30V Vgs TO-220AB | ||
| SIHP186N60EF-GE3 | MOSFET Power MOSFET | ||
| SIHP18N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
| SIHP18N50C | 全新原装 | ||
| SIHP18N50C-E3,SIHP18N50C | 全新原装 | ||
| SIHP18N50CE3 | Power Field-Effect Transistor, 18A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
Vishay |
SIHP18N50C-E3 | MOSFET N-CH 500V 18A TO220 | |
| SIHP180N60E-GE3 | E Series Power MOSFET TO-220AB, 180 m @ 10V | ||
| SIHP18N60E-GE3 | MOSFET N-CH 600V 18A TO220AB |