FJBE2150D

Mfr. #:: FJBE2150D
制造商:: Fairchild Semiconductor
描述:
生命周期:: 制造商新产品。
数据表:: FJBE2150D 数据表
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产品属性
属性值

制造商: 仙童半导体

产品分类: 晶体管 - 双极 (BJT) - RF

打包: 管子

单位重量: 0.066315 oz

安装方式: 贴片/贴片

包装盒: D2PAK-2

配置: 单身的

钯功耗: 110 W

最高工作温度: + 125 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 800 V

晶体管极性: NPN

集电极-发射极-饱和-电压: 0.25 V

集电极-基极-电压-VCBO: 1.25 kV

发射极-基极-电压-VEBO: 12 V

最大直流集电极电流: 2 A

增益带宽积fT: 5 MHz

连续集电极电流: 0.5 A

DC-Collector-Base-Gain-hfe-Min: 20

直流电流增益-hFE-Max: 35

Tags: FJB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FJBE2150D 描述

***Semiconductor: ESBC™ Rated NPN Silicon Transistor

***rchild Semiconductor: The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1250 volts and up to 3 amps, while providing exceptionally low on-resistance and very low switching losses.The ESBC™ switch is designed to be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance.The FJBE2150D provides exceptional reliability and a large operating range due to its square Reverse-Bias-Safe-Operating-Area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures.The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in high-voltage HV-D2PAK rated at 2500 V creepage and clearance.

Market price

型号	制造商	描述	库存	价格
FJBE2150DTU DISTI # FJBE2150DTU-ND	ON Semiconductor	TRANS NPN 800V 2A D2-PAK-2L RoHS: Compliant Container: Tube	Limited Supply - Call
FJBE2150DTU DISTI # FJBE2150DTU	ON Semiconductor	Trans GP BJT NPN 800V 2A 3-Pin D2PAK Tube (Alt: FJBE2150DTU) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€1.1079 10:€0.9849 25:€0.8869 50:€0.8059 100:€0.7389 500:€0.6819 1000:€0.6329
FJBE2150DTU DISTI # 96W6437	ON Semiconductor	NPN/1250V/3A / RAIL	0	1:$1.5500 10:$1.2500 100:$1.0000 500:$0.8750 1000:$0.7250 2500:$0.6650 10000:$0.6350
FJBE2150DTU DISTI # 512-FJBE2150DTU	ON Semiconductor	Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor RoHS: Compliant	0

FJBE2150D

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes