FJBE2150DTU

FJBE2150DTU
Mfr. #:
FJBE2150DTU
制造商:
ON Semiconductor / Fairchild
描述:
Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
生命周期:
制造商新产品。
数据表:
FJBE2150DTU 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FJBE2150DTU Datasheet
ECAD Model:
产品属性
属性值
制造商:
安森美半导体
产品分类:
双极晶体管 - BJT
RoHS:
Y
安装方式:
贴片/贴片
包装/案例:
D2PAK-3
晶体管极性:
NPN
配置:
单身的
集电极-发射极电压 VCEO 最大值:
800 V
集电极-基极电压 VCBO:
1.25 kV
发射极基极电压 VEBO:
12 V
集电极-发射极饱和电压:
0.25 V
最大直流集电极电流:
2 A
增益带宽积 fT:
5 MHz
最低工作温度:
- 55 C
最高工作温度:
+ 125 C
系列:
FJBE2150D
直流电流增益 hFE 最大值:
35
打包:
管子
品牌:
安森美半导体/飞兆半导体
连续集电极电流:
0.5 A
DC 集电极/基极增益 hfe 最小值:
20
Pd - 功耗:
110 W
产品类别:
BJT - 双极晶体管
出厂包装数量:
1000
子类别:
晶体管
单位重量:
0.066315 oz
Tags
FJB
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
***ical
Trans GP BJT NPN 800V 2A 110000mW 3-Pin(2+Tab) D2PAK Rail
***r Electronics
Power Bipolar Transistor, 2A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin
***rchild Semiconductor
The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1500 volts and up to 3 amps, while providing exceptionally low on-resistance and very low switching losses.The ESBC™ switch is designed to be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance.The FJBE2150D provides exceptional reliability and a large operating range due to its square Reverse-Bias-Safe-Operating-Area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures.The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in high-voltage HV-D2PAK rated at 2500 V creepage and clearance.
型号 制造商 描述 库存 价格
FJBE2150DTU
DISTI # FJBE2150DTU-ND
ON SemiconductorTRANS NPN 800V 2A D2-PAK-2L
RoHS: Compliant
Container: Tube
Limited Supply - Call
    FJBE2150DTU
    DISTI # 96W6437
    ON SemiconductorNPN/1250V/3A / RAIL0
      图片 型号 描述
      FJBE2150DTU

      Mfr.#: FJBE2150DTU

      OMO.#: OMO-FJBE2150DTU

      Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
      FJBE2150DTU

      Mfr.#: FJBE2150DTU

      OMO.#: OMO-FJBE2150DTU-ON-SEMICONDUCTOR

      TRANS NPN 800V 2A D2-PAK-2L
      FJBE2150D

      Mfr.#: FJBE2150D

      OMO.#: OMO-FJBE2150D-1190

      全新原装
      可用性
      库存:
      Available
      订购:
      3500
      输入数量:
      FJBE2150DTU的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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