STGW60H65DFB

Mfr. #:: STGW60H65DFB
制造商:: STMicroelectronics
描述:: IGBT 650V 80A 375W TO-247
生命周期:: 制造商新产品。
数据表:: STGW60H65DFB 数据表
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更多信息:: STGW60H65DFB 更多信息 STGW60H65DFB Product Details

产品属性
属性值

制造商: 意法半导体

产品分类: IGBT - 单

系列: 600-650V IGBTs

打包: 管子

单位重量: 1.340411 oz

安装方式: 通孔

包装盒: TO-247-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-247

配置: 单身的

最大功率: 375W

反向恢复时间trr: 60ns

电流收集器 Ic-Max: 80A

电压收集器发射极击穿最大值: 650V

IGBT型: 海沟场停止

电流收集器脉冲Icm: 240A

Vce-on-Max-Vge-Ic: 2V @ 15V, 60A

开关能源: 1.09mJ (on), 626μJ (off)

栅极电荷: 306nC

Td-on-off-25°C: 51ns/160ns

测试条件: 400V, 60A, 5 Ohm, 15V

钯功耗: 375 W

最高工作温度: + 175 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 650 V

集电极-发射极-饱和-电压: 1.6 V

25-C 时的连续集电极电流: 80 A

栅极-发射极-漏电流: 250 nA

最大栅极发射极电压: 20 V

连续集电极电流 Ic-Max: 60 A

Tags: STGW60H65DF, STGW60H65D, STGW60H65, STGW60H, STGW6, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGW60H65DFB 描述

***Components: In a Tube of 30, STMicroelectronics STGW60H65DFB IGBT, 80 A 650 V, 3-Pin TO-247

***ical: Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: STGW Series Advanced Trench Gate Field Stop Through Hole IGBT - TO-247-3

***p One Stop Global: Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube

***et Europe: Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube

***ied Electronics & Automation: IGBT N-Ch 650V 60A High-Speed TO247

***ronik: IGBT 650V 80A 1,75V TO247-3

***i-Key: IGBT 650V 80A 375W TO-247

***ark: Igbt, Single, 650V, 80A, To-247-3; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. IGBT, SINGLE, 650V, 80A, TO-247-3; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)

***nell: IGBT, SINGOLO, 650V, 80A, TO-247-3; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:375W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HB Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)

STGW60H65DFB 更多信息

IGBT HB/HB2 Series: STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.

Market price

型号	制造商	描述	库存	价格
STGW60H65DFB DISTI # 497-14367-ND	STMicroelectronics	IGBT 650V 80A 375W TO-247 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1020:$2.7783 510:$3.2943 120:$3.8697 30:$4.4650 1:$5.2600
STGW60H65DFB-4 DISTI # STGW60H65DFB-4-ND	STMicroelectronics	IGBT RoHS: Not compliant Min Qty: 600 Container: Tube	Temporarily Out of Stock	600:$5.6963
STGW60H65DFB DISTI # STGW60H65DFB	STMicroelectronics	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: STGW60H65DFB) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€3.0400 10:€2.8000 100:€2.6800 250:€2.5700 500:€2.4600 1000:€2.0600
STGW60H65DFB DISTI # STGW60H65DFB	STMicroelectronics	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW60H65DFB) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	600:$2.7900 1200:$2.6900 2400:$2.4900 3600:$2.3900 6000:$2.3900
STGW60H65DFB-4 DISTI # STGW60H65DFB-4	STMicroelectronics	PTD HIGH VOLTAGE - Trays (Alt: STGW60H65DFB-4) RoHS: Compliant Min Qty: 600 Container: Tray	Americas - 0	600:$5.1900 1200:$4.9900 2400:$4.6900 3600:$4.4900 6000:$4.3900
STGW60H65DFB DISTI # 511-STGW60H65DFB	STMicroelectronics	IGBT Transistors 600V 60A trench gate field-stop IGBT RoHS: Compliant	0	1:$5.0000 10:$4.2500 100:$3.6800 250:$3.4900 500:$3.1300 1000:$2.6400 2500:$2.5100
STGW60H65DFB-4 DISTI # 511-STGW60H65DFB-4	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed	0	1:$8.3300 10:$7.5300 25:$7.1800 100:$6.2300 250:$5.9600 500:$5.4300 1000:$4.7300
STGW60H65DFB DISTI # 2629740	STMicroelectronics	IGBT, SINGLE, 650V, 80A, TO-247-3 RoHS: Compliant	0	500:£2.0500 250:£2.2000 100:£2.3800 10:£2.6500 1:£3.2000
STGW60H65DFB-4 DISTI # 2778105	STMicroelectronics	IGBT, SINGLE, 650V, 80A, TO-247 RoHS: Compliant	100	100:£3.5600 50:£3.5700 10:£3.5800 5:£3.6300 1:£3.7000
STGW60H65DFB-4 DISTI # 2778105	STMicroelectronics	IGBT, SINGLE, 650V, 80A, TO-247 RoHS: Compliant	100	250:$8.0900 100:$8.6800 50:$9.7400 10:$10.8500 5:$12.2400 1:$14.0400
STGW60H65DFB-4 DISTI # XSFP00000113820	STMicroelectronics	Power Field-Effect Transistor, 11A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-263AB RoHS: Compliant	80 in Stock0 on Order	80:$11.0000 17:$12.1000

图片	型号	描述
	Mfr.#: STGW60H65DFB OMO.#: OMO-STGW60H65DFB	IGBT Transistors 600V 60A trench gate field-stop IGBT
	Mfr.#: STGW60H65FB OMO.#: OMO-STGW60H65FB	IGBT Transistors 650V 60A Trench Gate Field-Stop IGBT
	Mfr.#: STGW60H65DRF OMO.#: OMO-STGW60H65DRF	IGBT Transistors 60A 650V Field Stop Trench Gate IBGT
	Mfr.#: STGW60H65DF OMO.#: OMO-STGW60H65DF	IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT
	Mfr.#: STGW60V60F OMO.#: OMO-STGW60V60F	IGBT Transistors 600V 60A Trench Gate 1.8V Vce IGBT
	Mfr.#: STGW60H65F OMO.#: OMO-STGW60H65F	IGBT Transistors 60A 650V FST IGBT Very High Switching
	Mfr.#: STGW60V60F OMO.#: OMO-STGW60V60F-STMICROELECTRONICS	IGBT Transistors 600V 60A Trench Gate 1.8V Vce IGBT
	Mfr.#: STGW60H60DLFB OMO.#: OMO-STGW60H60DLFB-STMICROELECTRONICS	IGBT 600V 80A 375W TO-247
	Mfr.#: STGW60H65DF OMO.#: OMO-STGW60H65DF-STMICROELECTRONICS	IGBT 650V 120A 360W TO247
	Mfr.#: STGW60H65DFB-4 OMO.#: OMO-STGW60H65DFB-4-STMICROELECTRONICS	PTD HIGH VOLTAGE (Alt: STGW60H65DFB-4)

STGW60H65DFB

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes