BSC031N06NS3 G

Mfr. #:: BSC031N06NS3 G
制造商:: Infineon Technologies
描述:: Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R
生命周期:: 制造商新产品。
数据表:: BSC031N06NS3 G 数据表
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更多信息:: BSC031N06NS3 G 更多信息

产品属性
属性值

制造商: 英飞凌

产品分类: FET - 单

系列: OptiMOS 3

打包: 卷轴

部分别名: BSC031N06NS3GATMA1 BSC031N06NS3GXT SP000451482

安装方式: 贴片/贴片

商品名: 优化MOS

包装盒: TDSON-8

技术: 硅

通道数: 1 Channel

配置: 单四漏三源

晶体管型: 1 N-Channel

钯功耗: 2.5 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 16 ns

上升时间: 161 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 100 A

Vds-漏-源-击穿电压: 60 V

Rds-On-Drain-Source-Resistance: 3.1 mOhms

晶体管极性: N通道

典型关断延迟时间: 63 ns

典型开启延迟时间: 38 ns

通道模式: 增强

Tags: BSC031N06NS3G, BSC031, BSC03, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC031N06NS3 G 更多信息

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Market price

型号	制造商	描述	库存	价格
BSC031N06NS3 G DISTI # 30610688	Infineon Technologies AG	Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R RoHS: Compliant	9995	200:$1.2648 100:$1.4280 50:$1.6958 10:$2.0655 7:$4.0545
BSC031N06NS3GATMA1 DISTI # BSC031N06NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.9743
BSC031N06NS3GATMA1 DISTI # BSC031N06NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.1193 500:$1.3508 100:$1.7368 10:$2.1610 1:$2.3900
BSC031N06NS3GATMA1 DISTI # BSC031N06NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.1193 500:$1.3508 100:$1.7368 10:$2.1610 1:$2.3900
BSC031N06NS3 G DISTI # C1S322000192300	Infineon Technologies AG	Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R RoHS: Compliant	9295	2000:$0.8730 200:$0.9920 100:$1.1200 50:$1.3300 10:$1.6200 1:$3.1800
BSC031N06NS3GXT DISTI # BSC031N06NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC031N06NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.7849 10000:$0.7559 20000:$0.7289 30000:$0.7049 50000:$0.6919
BSC031N06NS3GATMA1 DISTI # 85X4151	Infineon Technologies AG	MOSFET, N-CH, 60V, 100A, 139W, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	1:$2.0100 10:$1.7100 25:$1.6000 50:$1.4800 100:$1.3700 250:$1.2900 500:$1.2000 1000:$0.9880
BSC031N06NS3 G DISTI # 726-BSC031N06NS3G	Infineon Technologies AG	MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 RoHS: Compliant	0	1:$2.0100 10:$1.7100 100:$1.3700 500:$1.2000 1000:$0.9880
BSC031N06NS3GATMA1 DISTI # 7545257P	Infineon Technologies AG	MOSFET N-CHANNEL 60V 100A TDSON8, RL	1	50:£1.1250 250:£0.8500 1250:£0.6500 2500:£0.6100
BSC031N06NS3G	Infineon Technologies AG	Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	Europe - 2510
BSC031N06NS3G	Infineon Technologies AG		1181
BSC031N06NS3GATMA1 DISTI # 2443369	Infineon Technologies AG	MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant	0	1:$3.1900 10:$2.7100 100:$2.1700 500:$1.9100 1000:$1.7500
BSC031N06NS3GATMA1 DISTI # 2443369RL	Infineon Technologies AG	MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant	0	1:$3.1900 10:$2.7100 100:$2.1700 500:$1.9100 1000:$1.7500
BSC031N06NS3GATMA1 DISTI # 2443369	Infineon Technologies AG	MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant	90	1:£1.1300 10:£0.8960 100:£0.7710
BSC031N06NS3G	Infineon Technologies AG	60V,100A,N Channel Power MOSFET	205	1:$1.4300 100:$1.1900 500:$1.0500 1000:$1.0200

图片	型号	描述
	Mfr.#: BSC031N06NS3 G OMO.#: OMO-BSC031N06NS3-G	MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
	Mfr.#: BSC031N06NS3 OMO.#: OMO-BSC031N06NS3-1190	全新原装
	Mfr.#: BSC031N06NS3 G OMO.#: OMO-BSC031N06NS3-G-1190	Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R
	Mfr.#: BSC031N06NS3G OMO.#: OMO-BSC031N06NS3G-1190	Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSC031N06NS3GATMA1 OMO.#: OMO-BSC031N06NS3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 100A TDSON-8
	Mfr.#: BSC031N06NS3GATMA1 , TDA OMO.#: OMO-BSC031N06NS3GATMA1-TDA-1190	全新原装

BSC031N06NS3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes