CGHV59350F

Mfr. #:: CGHV59350F
制造商:: N/A
描述:: RF JFET Transistors 5.2-5.9GHz 350 Watt Gain typ. 10.5dB GaN
生命周期:: 制造商新产品。
数据表:: CGHV59350F 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: CGHV59350F 更多信息

产品属性
属性值

制造商: Wolfspeed / 克里

产品分类: 晶体管 - FET、MOSFET - 单

打包: 托盘

安装方式: 贴片/贴片

工作温度范围: - 40 C to + 85 C

晶体管型: HEMT

获得: 11 dB

输出功率: 450 W

最高工作温度: + 85 C

最低工作温度: - 40 C

工作频率: 5900 MHz

Vds-漏-源-击穿电压: 125 V

VGS-th-Gate-Source-Threshold-Voltage: - 3 V

VGS-栅极-源极击穿电压: - 10 V 2 V

Tags: CGHV59, CGHV5, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV59350F 描述

***i-Key: RF MOSFET HEMT 50V 440217

***hardson RFPD: RF POWER TRANSISTOR

CGHV59350F 更多信息

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

Market price

型号	制造商	描述	库存	价格
CGHV59350F DISTI # CGHV59350F-ND	Wolfspeed	RF MOSFET HEMT 50V 440217 RoHS: Compliant Min Qty: 1 Container: Tray	2In Stock	1:$1,249.2800
CGHV59350F-TB DISTI # CGHV59350F-TB-ND	Wolfspeed	TEST FIXTURE FOR CGHV59350F RoHS: Compliant Min Qty: 1 Container: Bulk	1In Stock	1:$550.0000
CGHV59350F DISTI # 941-CGHV59350F	Cree, Inc.	RF JFET Transistors GaN HEMT 5.2-5.9GHz, 350 Watt RoHS: Compliant	11	1:$1,249.2700
CGHV59350F-TB DISTI # 941-CGHV59350F-TB	Cree, Inc.	RF Development Tools Test Board without GaN HEMT RoHS: Compliant	8	1:$550.0000
CGHV59350F DISTI # CGHV59350F	Wolfspeed	RF POWER TRANSISTOR RoHS: Compliant	0	1:$1,249.2700
CGHV59350F-TB DISTI # CGHV59350F-TB	Wolfspeed	RF TRANSISTOR TEST FIXTURE RoHS: Compliant	1	1:$550.0000

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	Mfr.#: CGHV59350F OMO.#: OMO-CGHV59350F-WOLFSPEED	RF JFET Transistors 5.2-5.9GHz 350 Watt Gain typ. 10.5dB GaN