STGP10NC60HD

STGP10NC60HD
Mfr. #:
STGP10NC60HD
制造商:
STMicroelectronics
描述:
IGBT Transistors PowerMESH TM IGBT
生命周期:
制造商新产品。
数据表:
STGP10NC60HD 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
STGP10NC60HD 更多信息 STGP10NC60HD Product Details
产品属性
属性值
制造商:
意法半导体
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
TO-220-3
安装方式:
贴片/贴片
配置:
单身的
集电极-发射极电压 VCEO 最大值:
600 V
集电极-发射极饱和电压:
1.9 V
最大栅极发射极电压:
20 V
Pd - 功耗:
56 W
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
系列:
STGP10NC60HD
打包:
管子
连续集电极电流 Ic 最大值:
20 A
高度:
9.15 mm
长度:
10.4 mm
宽度:
4.6 mm
品牌:
意法半导体
连续集电极电流:
7 A
栅极-发射极漏电流:
100 nA
产品类别:
IGBT晶体管
出厂包装数量:
1000
子类别:
IGBT
单位重量:
0.012346 oz
Tags
STGP10NC, STGP10N, STGP10, STGP1, STGP, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***Z
    M***Z
    ES

    It corresponds to the order.

    2019-04-25
    A***v
    A***v
    RU

    Very good

    2019-07-02
    C***m
    C***m
    US

    tested good...

    2019-07-02
    D***r
    D***r
    SI

    thenks 5 stars

    2019-05-14
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IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 65W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
***ment14 APAC
IGBT, TO-220; DC Collector Current:20A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:65W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:20A; Package / Case:TO-220; Power Dissipation Max:65W; Power Dissipation Pd:60W; Pulsed Current Icm:40A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
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***nsix Microsemi
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IGBT, N, 600V, 10A, TO-220; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:10A; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:110W; Power Dissipation Pd:110W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
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***nsix Microsemi
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***ineon SCT
Infineon's 600 V, 10 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
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***ineon SCT
The 600 V, 6 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
型号 制造商 描述 库存 价格
STGP10NC60HD
DISTI # V99:2348_17652368
STMicroelectronicsTrans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
11
  • 500:$0.4222
  • 100:$0.4554
  • 10:$0.7489
  • 1:$0.9365
STGP10NC60HD
DISTI # 497-5118-5-ND
STMicroelectronicsIGBT 600V 20A 65W TO220
RoHS: Compliant
Min Qty: 1
Container: Tube
2011In Stock
  • 1000:$0.5497
  • 500:$0.6963
  • 100:$0.8428
  • 50:$1.0260
  • 1:$1.2100
STGP10NC60HD
DISTI # 30702251
STMicroelectronicsTrans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
2000
  • 50:$0.5034
STGP10NC60HD
DISTI # STGP10NC60HD
STMicroelectronicsTrans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STGP10NC60HD)
RoHS: Compliant
Min Qty: 1
Container: Tube
Americas - 0
  • 1:$0.5229
  • 10:$0.5139
  • 25:$0.5059
  • 50:$0.4979
  • 100:$0.4759
  • 500:$0.4549
  • 1000:$0.4449
STGP10NC60HDSTMicroelectronicsSTGP10NC60HD Series N-Channel 600 V 10 A Very Fast IGBT Flange Mount - TO-220
RoHS: Compliant
6350Tube
  • 50:$0.9150
  • 250:$0.7850
  • 850:$0.7100
STGP10NC60HD
DISTI # 511-STGP10NC60HD
STMicroelectronicsIGBT Transistors PowerMESH TM IGBT
RoHS: Compliant
3980
  • 1:$1.1500
  • 10:$0.9780
  • 100:$0.7510
  • 500:$0.6640
  • 1000:$0.5240
  • 2000:$0.4650
STGP10NC60HD
DISTI # C1S730200637510
STMicroelectronicsTrans IGBT Chip N-CH 600V 20A 65000mW 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
11
  • 10:$0.7631
STGP10NC60HD
DISTI # C1S730200483256
STMicroelectronicsTrans IGBT Chip N-CH 600V 20A 65000mW 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
2000
  • 2000:$0.6880
  • 1000:$0.8310
图片 型号 描述
UCC5390SCDR

Mfr.#: UCC5390SCDR

OMO.#: OMO-UCC5390SCDR

Gate Drivers 10A/10A 3-kVRMS Sing ChanelIsolGateDriver
TBD62083AFG,EL

Mfr.#: TBD62083AFG,EL

OMO.#: OMO-TBD62083AFG-EL

Gate Drivers DMOS Transistor Array 7-CH, 50V/0.5A
IPA80R280P7XKSA1

Mfr.#: IPA80R280P7XKSA1

OMO.#: OMO-IPA80R280P7XKSA1

MOSFET
TL594IN

Mfr.#: TL594IN

OMO.#: OMO-TL594IN

Switching Controllers PWM Controller
FG28C0G1H272JNT06

Mfr.#: FG28C0G1H272JNT06

OMO.#: OMO-FG28C0G1H272JNT06

Multilayer Ceramic Capacitors MLCC - Leaded RAD 50V 2700pF C0G 5% LS:5mm
74VHC273FT

Mfr.#: 74VHC273FT

OMO.#: OMO-74VHC273FT

Flip Flops CMOS Logic IC Series
1821423

Mfr.#: 1821423

OMO.#: OMO-1821423

Pluggable Terminal Blocks MCV 0,5/ 5-G-2,54 P20 THR R44
PG164100

Mfr.#: PG164100

OMO.#: OMO-PG164100

Hardware Debuggers MPLAB SNAP DEV BOARD
TBD62083AFG,EL

Mfr.#: TBD62083AFG,EL

OMO.#: OMO-TBD62083AFG-EL-TOSHIBA-SEMICONDUCTOR-AND-STOR

Gate Drivers DMOS Transistor Array 7-CH, 50V/0.5A
TL594IN

Mfr.#: TL594IN

OMO.#: OMO-TL594IN-TEXAS-INSTRUMENTS

Switching Controllers PWM Controlle
可用性
库存:
Available
订购:
1986
输入数量:
STGP10NC60HD的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$1.14
US$1.14
10
US$0.98
US$9.78
100
US$0.75
US$75.10
500
US$0.66
US$332.00
1000
US$0.52
US$524.00
2000
US$0.46
US$930.00
10000
US$0.45
US$4 470.00
25000
US$0.43
US$10 825.00
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