QPD1009

Mfr. #:: QPD1009
制造商:: Qorvo
描述:: RF JFET Transistors DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN
生命周期:: 制造商新产品。
数据表:: QPD1009 数据表
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更多信息:: QPD1009 更多信息

产品属性
属性值

制造商: TriQuint (Qorvo)

产品分类: 晶体管 - FET、MOSFET - 单

系列: QPD

打包: 托盘

部分别名: 1132865

安装方式: 贴片/贴片

工作温度范围: - 40 C to + 85 C

包装盒: QFN-16

技术: 氮化镓碳化硅

配置: 单身的

晶体管型: HEMT

获得: 24 dB

输出功率: 17 W

钯功耗: 17.5 W

最高工作温度: + 85 C

最低工作温度: - 40 C

工作频率: DC to 4 GHz

Id 连续漏极电流: 700 mA

Vds-漏-源-击穿电压: 50 V

晶体管极性: N通道

开发套件: QPD1009-EVB1

VGS-栅极-源极击穿电压: - 2.8 V

Tags: QPD100, QPD10, QPD1, QPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

QPD1009 描述

***W: RF Power Transistor, DC- 4.0 GHz, 15 W, 50 V, 3 x 3 mm, GaN

QPD1009 更多信息

QPD1009 & QPD1010 GaN RF Transistors: Qorvo QPD1009 & QPD1010 GaN RF Transistors are discrete GaN on SiC HEMTs which operate from DC to 4GHz and constructed with Qorvo's proven QGaN25HV process. This process features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization potentially lowers system cost in terms of fewer amplifier line-ups and lower thermal management costs.

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

GaN Transistor Solutions for Sub 6GHz 5G: Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.

Market price

型号	制造商	描述	库存	价格
QPD1009 DISTI # 772-QPD1009	Qorvo	RF JFET Transistors DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN RoHS: Compliant	171	1:$31.0000 25:$26.8100 100:$23.1900 250:$21.5700
QPD1009-EVB1 DISTI # 772-QPD1009-EVB1	Qorvo	RF Development Tools DC-4GHz 15W 28-50V Eval Board RoHS: Compliant	3	1:$875.0000

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