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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| TBB1010KMTL-E | Renesas Electronics Corporation | RF Small Signal Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant | 75000 |
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| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: TBB1010 OMO.#: OMO-TBB1010-1190 |
全新原装 |
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Mfr.#: TBB1010KM OMO.#: OMO-TBB1010KM-1190 |
全新原装 |
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Mfr.#: TBB1012 OMO.#: OMO-TBB1012-1190 |
全新原装 |
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Mfr.#: TBB1012MMTL-E OMO.#: OMO-TBB1012MMTL-E-1152 |
RF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
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Mfr.#: TBB1014PMT-E OMO.#: OMO-TBB1014PMT-E-1190 |
全新原装 |
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Mfr.#: TBB1015QMTL-E OMO.#: OMO-TBB1015QMTL-E-1190 |
全新原装 |
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Mfr.#: TBB1015QMTL-H OMO.#: OMO-TBB1015QMTL-H-1190 |
- Bulk (Alt: TBB1015QMTL-H) |
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Mfr.#: TBB1016 OMO.#: OMO-TBB1016-1190 |
全新原装 |
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Mfr.#: TBB1016RMTL-E OMO.#: OMO-TBB1016RMTL-E-1152 |
RF Small Signal Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
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Mfr.#: TBB1019 OMO.#: OMO-TBB1019-1190 |
全新原装 |
