FGA30T65SHD

Mfr. #:: FGA30T65SHD
制造商:: ON Semiconductor
描述:: IGBT Transistors 650V FS Gen3 Trench IGBT
生命周期:: 制造商新产品。
数据表:: FGA30T65SHD 数据表
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更多信息:: FGA30T65SHD 更多信息

产品属性
属性值

制造商: 仙童半导体

产品分类: IGBT - 单

系列: -

打包: 管子

单位重量: 0.225789 oz

安装方式: 通孔

包装盒: TO-3P-3, SC-65-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-3PN

最大功率: 238W

反向恢复时间trr: 31.8ns

电流收集器 Ic-Max: 60A

电压收集器发射极击穿最大值: 650V

IGBT型: 海沟场停止

电流收集器脉冲Icm: 90A

Vce-on-Max-Vge-Ic: 2.1V @ 15V, 30A

开关能源: 598μJ (on), 167μJ (off)

栅极电荷: 54.7nC

Td-on-off-25°C: 14.4ns/52.8ns

测试条件: 400V, 30A, 6 Ohm, 15V

钯功耗: 238 W

最高工作温度: + 175 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 650 V

集电极-发射极-饱和-电压: 2.14 V

25-C 时的连续集电极电流: 60 A

栅极-发射极-漏电流: 400 nA

最大栅极发射极电压: 30 V

连续集电极电流 Ic-Max: 60 A

Tags: FGA30, FGA3, FGA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FGA30T65SHD 更多信息

Field Stop IGBTs: ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.

FGAFx0N60 Field Stop IGBTs: ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.

Market price

型号	制造商	描述	库存	价格
FGA30T65SHD DISTI # V99:2348_06359719	ON Semiconductor	650V FS GEN3 TRENCH IGBT	439	5000:$1.7290 2500:$1.7880 1000:$1.8710 500:$2.1589 250:$2.3609 100:$2.4710 10:$2.7740 1:$3.1620
FGA30T65SHD DISTI # FGA30T65SHD-ND	ON Semiconductor	IGBT 650V 60A 238W TO-3PN RoHS: Compliant Min Qty: 1 Container: Tube	365In Stock	1350:$2.0286 900:$2.4053 450:$2.6806 10:$3.4490 1:$3.8400
FGA30T65SHD DISTI # 26983406	ON Semiconductor	650V FS GEN3 TRENCH IGBT	9900	450:$3.6600
FGA30T65SHD DISTI # 25845376	ON Semiconductor	650V FS GEN3 TRENCH IGBT	439	250:$2.3609 100:$2.4710 10:$2.7740 4:$3.1620
FGA30T65SHD DISTI # FGA30T65SHD	ON Semiconductor	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-3PN Tube - Rail/Tube (Alt: FGA30T65SHD) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$1.7900 900:$1.6900 1800:$1.6900 2700:$1.6900 4500:$1.6900
FGA30T65SHD DISTI # FGA30T65SHD	ON Semiconductor	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-3PN Tube (Alt: FGA30T65SHD) RoHS: Compliant Min Qty: 450 Container: Tube	Asia - 0
FGA30T65SHD	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor RoHS: Compliant	450	1000:$2.2500 500:$2.3700 100:$2.4700 25:$2.5700 1:$2.7700
FGA30T65SHD DISTI # 512-FGA30T65SHD	ON Semiconductor	IGBT Transistors FS3TIGBT TO3PN 30A 650V RoHS: Compliant	263	1:$3.6600 10:$3.1100 100:$2.7000 250:$2.5600 500:$2.3000 1000:$1.9400 2500:$1.8400
FGA30T65SHD	ON Semiconductor	INSTOCK	6433
FGA30T65SHD	ON Semiconductor		7200	1:$5.3100 100:$3.3900 500:$2.8000 1000:$2.5700
FGA30T65SHD DISTI # C1S541901550127	ON Semiconductor	Trans IGBT Chip N-CH 650V 60A 238000mW 3-Pin(3+Tab) TO-3PN Tube RoHS: Compliant	450	250:$2.3609 100:$2.4710 10:$2.7740 1:$3.1620
FGA30T65SHD DISTI # 2781482	ON Semiconductor	FIELD STOP TRENCH IGBT, 650V/60A, TO-3PN RoHS: Compliant	450	1:$6.0800 10:$5.4600 450:$4.2500 900:$3.8100 1350:$3.2100
FGA30T65SHD DISTI # 2781482	ON Semiconductor	FIELD STOP TRENCH IGBT, 650V/60A, TO-3PN RoHS: Compliant	450	1:£3.1100 10:£2.3500 100:£2.0500 250:£1.9400 500:£1.7400

图片	型号	描述
	Mfr.#: FGA3060ADF OMO.#: OMO-FGA3060ADF	IGBT Transistors 600V proliferation PFC home application
	Mfr.#: FGA30N120FTDTU OMO.#: OMO-FGA30N120FTDTU-ON-SEMICONDUCTOR	IGBT 1200V 60A 339W TO3P
	Mfr.#: FGA30S120P-- OMO.#: OMO-FGA30S120P---1190	全新原装
	Mfr.#: FGA3065ADF OMO.#: OMO-FGA3065ADF-1190	全新原装
	Mfr.#: FGA30N120 OMO.#: OMO-FGA30N120-1190	全新原装
	Mfr.#: FGA30N120A OMO.#: OMO-FGA30N120A-1190	全新原装
	Mfr.#: FGA30N120AND OMO.#: OMO-FGA30N120AND-1190	全新原装
	Mfr.#: FGA30N60LSD OMO.#: OMO-FGA30N60LSD-1190	全新原装
	Mfr.#: FGA30N60RUFD OMO.#: OMO-FGA30N60RUFD-1190	全新原装
	Mfr.#: FGA30N60UFD OMO.#: OMO-FGA30N60UFD-1190	全新原装

FGA30T65SHD

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes