STGP30V60DF

Mfr. #:: STGP30V60DF
制造商:: STMicroelectronics
描述:: IGBT Transistors 600V 30A High Speed Trench Gate IGBT
生命周期:: 制造商新产品。
数据表:: STGP30V60DF 数据表
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更多信息:: STGP30V60DF 更多信息 STGP30V60DF Product Details

产品属性
属性值

制造商: 意法半导体

产品分类: IGBT - 单

系列: 600-650V IGBTs

打包: 管子

单位重量: 0.081130 oz

安装方式: 通孔

包装盒: TO-220-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-220

配置: 单身的

最大功率: 258W

反向恢复时间trr: 53ns

电流收集器 Ic-Max: 60A

电压收集器发射极击穿最大值: 600V

IGBT型: 海沟场停止

电流收集器脉冲Icm: 120A

Vce-on-Max-Vge-Ic: 2.3V @ 15V, 30A

开关能源: 383μJ (on), 233μJ (off)

栅极电荷: 163nC

Td-on-off-25°C: 45ns/189ns

测试条件: 400V, 30A, 10 Ohm, 15V

钯功耗: 258 W

最高工作温度: + 175 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 600 V

集电极-发射极-饱和-电压: 2.35 V

25-C 时的连续集电极电流: 60 A

栅极-发射极-漏电流: 250 nA

最大栅极发射极电压: 20 V

Tags: STGP30, STGP3, STGP, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGP30V60DF 描述

***Components: In a Pack of 5, STMicroelectronics STGP30V60DF IGBT, 60 A 600 V, 3-Pin TO-220

***ure Electronics: V Series 600 V 30 A Flange Mount Trench Gate Field-Stop IGBT - TO-220

***ical: Trans IGBT Chip N=-CH 600V 60A 3-Pin(3+Tab) TO-220 Tube

***p One Stop Global: Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-220 Tube

***et Europe: Trans IGBT Chip N-CH 600V 60A 3-Pin TO-220

***ied Electronics & Automation: IGBT Trench gate,600V 30A/100 deg,TO220

***ronik: IGBT 600V 30A 1,85V TO220-3

***i-Key: IGBT 600V 60A 258W TO220AB

***ukat: 600V 60A 258W TO220

***ark: Igbt, Single, 600V, 60A, To-220; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:258W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-220; No. Of Pins:3Pins; Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. IGBT, SINGLE, 600V, 60A, TO-220; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:258W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:V Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018)

***nell: IGBT, SINGOLO, 600V, 60A, TO-220; Corrente di Collettore CC:60A; Tensione Saturaz Collettore-Emettitore Vce(on):1.85V; Dissipazione di Potenza Pd:258W; Tensione Collettore-Emettitore V(br)ceo:600V; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:V Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)

STGP30V60DF 更多信息

IGBT V Series: STMicroelectronics 600V trench-gate field-stop very high speed IGBT V series feature the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz) and simplified thermal and EMI design.

Market price

型号	制造商	描述	库存	价格
STGP30V60DF DISTI # 497-13762-5-ND	STMicroelectronics	IGBT 600V 60A 258W TO220AB RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1000:$1.6765 500:$1.9849 100:$2.3755 50:$2.7558 1:$3.2200
STGP30V60DF DISTI # STGP30V60DF	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin TO-220 (Alt: STGP30V60DF) RoHS: Compliant Min Qty: 50	Europe - 0	50:€1.5909 100:€1.3249 200:€1.2229 300:€1.1359 500:€1.0599
STGP30V60DF DISTI # STGP30V60DF	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin TO-220 - Rail/Tube (Alt: STGP30V60DF) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$1.2900 2000:$1.1900 4000:$1.1900 6000:$1.0900 10000:$1.0900
STGP30V60DF DISTI # 511-STGP30V60DF	STMicroelectronics	IGBT Transistors 600V 30A High Speed Trench Gate IGBT RoHS: Compliant	1	1:$2.8800 10:$2.4400 100:$1.9500 500:$1.7100 1000:$1.4200 2000:$1.3200 5000:$1.2700
STGP30V60DF DISTI # STGP30V60DF	STMicroelectronics	600V 60A 258W TO220 RoHS: Not Compliant	0	10:€1.5000 50:€1.3000 200:€1.2000 500:€1.1500
STGP30V60DF DISTI # 2889923	STMicroelectronics	IGBT, SINGLE, 600V, 60A, TO-220 RoHS: Compliant	0	500:£1.3400 250:£1.3800 100:£1.4200 10:£1.7700 1:£2.2400

图片	型号	描述
	Mfr.#: STGP3HF60HD OMO.#: OMO-STGP3HF60HD	IGBT Transistors 4.5 A, 600 V very fast IGBT with Ultrafast diode
	Mfr.#: STGP30V60F OMO.#: OMO-STGP30V60F	IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
	Mfr.#: STGP35N35LZ OMO.#: OMO-STGP35N35LZ	IGBT Transistors EAS 450mJ 345V PowerMESH IGBT
	Mfr.#: STGP30V60DF OMO.#: OMO-STGP30V60DF-STMICROELECTRONICS	IGBT Transistors 600V 30A High Speed Trench Gate IGBT
	Mfr.#: STGP35N35LZ OMO.#: OMO-STGP35N35LZ-STMICROELECTRONICS	IGBT Transistors EAS 450mJ 345V PowerMESH IGBT
	Mfr.#: STGP30M65DF2 OMO.#: OMO-STGP30M65DF2-STMICROELECTRONICS	IGBT 650V 30A TO-220AB
	Mfr.#: STGP30H60DFB OMO.#: OMO-STGP30H60DFB-STMICROELECTRONICS	TRENCH GATE FIELD-STOP IGBT, HB
	Mfr.#: STGP30H60DF/IXFP22N65X2 OMO.#: OMO-STGP30H60DF-IXFP22N65X2-1190	全新原装
	Mfr.#: STGP3HF60HD OMO.#: OMO-STGP3HF60HD-STMICROELECTRONICS	IGBT BIPO 600V 3A TO220
	Mfr.#: STGP3N60C3 OMO.#: OMO-STGP3N60C3-1190	全新原装

STGP30V60DF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes