IKP04N60T

Mfr. #:: IKP04N60T
制造商:: Infineon Technologies
描述:: IGBT Transistors LOW LOSS DuoPack 600V 4A
生命周期:: 制造商新产品。
数据表:: IKP04N60T 数据表
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ECAD Model:

产品属性
属性值

制造商: 英飞凌

产品分类: IGBT - 单

系列: IKP04N60

打包: 管子

部分别名: IKP04N60TXK IKP04N60TXKSA1 SP000683054

单位重量: 0.211644 oz

安装方式: 通孔

包装盒: TO-220-3

配置: 单身的

最高工作温度: + 150 C

最低工作温度: - 40 C

集电极-发射极-电压-VCEO-Max: 600 V

最大栅极发射极电压: +/- 20 V

连续集电极电流 Ic-Max: 8 A

Tags: IKP04N, IKP04, IKP0, IKP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IKP04N60T 描述

***et: Trans IGBT Chip N-CH 600V 8A 3-Pin(3+Tab) TO-220

***nell: IGBT, N, 600V, 4A, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:4A; Voltage, Vce Sat Max:2.05V; Power Dissipation:42W; Case Style:TO-220; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Transistors, No. of:1

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

Market price

型号	制造商	描述	库存	价格
IKP04N60TXKSA1 DISTI # IKP04N60TXKSA1-ND	Infineon Technologies AG	IGBT 600V 8A 42W TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Temporarily Out of Stock	500:$1.1317
IKP04N60T DISTI # SP000683054	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 8A 3-Pin TO-220 Tube (Alt: SP000683054) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 4500	1:€1.2799 10:€1.0739 25:€0.8969 50:€0.7809 100:€0.7659 500:€0.7459 1000:€0.7319
IKP04N60T DISTI # IKP04N60T	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 8A 3-Pin TO-220 Tube (Alt: IKP04N60T) RoHS: Compliant Min Qty: 500 Container: Tube	Asia - 0	500:$0.8799 1000:$0.8554 1500:$0.8323 2500:$0.8104 5000:$0.7999 12500:$0.7896 25000:$0.7796
IKP04N60T DISTI # SP000683054	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 8A 3-Pin TO-220 Tube (Alt: SP000683054) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€1.2079 10:€1.0739 25:€0.9659 50:€0.8779 100:€0.8049 500:€0.7429 1000:€0.6899
IKP04N60TXK DISTI # IKP04N60TXKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 8A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IKP04N60TXKSA1) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.8869 2000:$0.8549 3000:$0.8239 5000:$0.7959 10000:$0.7819
IKP04N60T DISTI # 726-IKP04N60T	Infineon Technologies AG	IGBT Transistors LOW LOSS DuoPack 600V 4A RoHS: Compliant	1124	1:$1.8200 10:$1.5400 100:$1.2400 500:$1.0800
IKP04N60T DISTI # 1471737	Infineon Technologies AG	RoHS: Compliant	0	1:$2.8800 10:$2.4400 100:$1.9700 500:$1.7200

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