CGH60060D-GP4

CGH60060D-GP4
Mfr. #:
CGH60060D-GP4
制造商:
N/A
描述:
RF JFET Transistors GaN HEMT Die DC-6.0GHz, 60 Watt
生命周期:
制造商新产品。
数据表:
CGH60060D-GP4 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
CGH60060D-GP4 更多信息
产品属性
属性值
制造商:
科沃
产品分类:
射频 JFET 晶体管
RoHS:
Y
技术:
氮化镓碳化硅
Vds - 漏源击穿电压:
32 V
Vgs - 栅源击穿电压:
100 V
Pd - 功耗:
45 W
安装方式:
贴片/贴片
打包:
托盘
配置:
单身的
高度:
4.064 mm
长度:
9.652 mm
宽度:
5.842 mm
品牌:
科沃
栅源截止电压:
- 2.9 V
湿气敏感:
是的
产品类别:
射频 JFET 晶体管
出厂包装数量:
50
子类别:
晶体管
第 # 部分别名:
1092444
Tags
CGH600, CGH60, CGH6, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 28V DIE
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
型号 制造商 描述 库存 价格
CGH60060D-GP4
DISTI # V36:1790_22799857
Cree, Inc.RF POWER TRANSISTOR0
  • 50000:$89.9500
  • 25000:$89.9600
  • 5000:$92.1300
  • 500:$97.3900
  • 50:$98.3700
CGH60060D-GP4
DISTI # CGH60060D-GP4-ND
WolfspeedRF MOSFET HEMT 28V DIE
RoHS: Compliant
Min Qty: 10
Container: Tray
400In Stock
  • 10:$80.6700
CGH60060D-GP4
DISTI # 941-CGH60060D
Cree, Inc.RF JFET Transistors GaN HEMT Die DC-6.0GHz, 60 Watt
RoHS: Compliant
60
  • 10:$90.5100
CGH60060D-GP4
DISTI # CGH60060D-GP4
WolfspeedRF POWER TRANSISTOR
RoHS: Compliant
0
  • 50:$82.4600
图片 型号 描述
CGH60030D-GP4

Mfr.#: CGH60030D-GP4

OMO.#: OMO-CGH60030D-GP4

RF JFET Transistors GaN HEMT Die DC-6.0GHz, 30 Watt
CGH60008D-GP4

Mfr.#: CGH60008D-GP4

OMO.#: OMO-CGH60008D-GP4

RF JFET Transistors GaN HEMT Die DC-6.0GHz, 8 Watt
CGH60060D-GP4

Mfr.#: CGH60060D-GP4

OMO.#: OMO-CGH60060D-GP4

RF JFET Transistors GaN HEMT Die DC-6.0GHz, 60 Watt
CGH60015D-GP4

Mfr.#: CGH60015D-GP4

OMO.#: OMO-CGH60015D-GP4

RF JFET Transistors GaN HEMT Die DC-6.0GHz, 15 Watt
CGH60015D-GP4

Mfr.#: CGH60015D-GP4

OMO.#: OMO-CGH60015D-GP4-WOLFSPEED

RF MOSFET HEMT 28V DIE
CGH60030D-GP4

Mfr.#: CGH60030D-GP4

OMO.#: OMO-CGH60030D-GP4-WOLFSPEED

RF MOSFET HEMT 28V DIE
CGH60060D-GP4

Mfr.#: CGH60060D-GP4

OMO.#: OMO-CGH60060D-GP4-WOLFSPEED

RF MOSFET HEMT 28V DIE
CGH60015D

Mfr.#: CGH60015D

OMO.#: OMO-CGH60015D-318

RF JFET Transistors DC-6GHz 15W GaN Gain@ 4GHz 15dB
CGH60030D

Mfr.#: CGH60030D

OMO.#: OMO-CGH60030D-318

RF JFET Transistors DC-6GHz 30W GaN Gain@ 4GHz 15dB
CGH60060D

Mfr.#: CGH60060D

OMO.#: OMO-CGH60060D-318

RF JFET Transistors DC-6GHz 60W GaN Gain@ 4GHz 13dB
可用性
库存:
60
订购:
2043
输入数量:
CGH60060D-GP4的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
10
US$90.51
US$905.10
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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