CGH60030D-GP4

CGH60030D-GP4
Mfr. #:
CGH60030D-GP4
制造商:
N/A
描述:
RF JFET Transistors GaN HEMT Die DC-6.0GHz, 30 Watt
生命周期:
制造商新产品。
数据表:
CGH60030D-GP4 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
CGH60030D-GP4 更多信息
产品属性
属性值
制造商:
克里公司
产品分类:
射频 JFET 晶体管
RoHS:
Y
晶体管类型:
HEMT
技术:
氮化镓
获得:
15 dB
晶体管极性:
N通道
Vds - 漏源击穿电压:
120 V
Vgs - 栅源击穿电压:
- 10 V to 2 V
Id - 连续漏极电流:
3 A
输出功率:
30 W
最大漏栅电压:
-
最低工作温度:
-
最高工作温度:
-
Pd - 功耗:
-
安装方式:
贴片/贴片
包装/案例:
打包:
胡扯
应用:
-
配置:
双重的
高度:
100 um
长度:
1.66 mm
工作频率:
4 GHz to 6 GHz
工作温度范围:
-
产品:
氮化镓 HEMT
宽度:
920 um
品牌:
Wolfspeed / 克里
栅源截止电压:
-
通道数:
2 Channel
班级:
-
开发套件:
-
秋季时间:
-
NF - 噪声系数:
-
P1dB - 压缩点:
-
产品类别:
射频 JFET 晶体管
Rds On - 漏源电阻:
500 mOhms
上升时间:
-
出厂包装数量:
10
子类别:
晶体管
典型关断延迟时间:
-
Vgs th - 栅源阈值电压:
- 3 V
Tags
CGH600, CGH60, CGH6, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 28V DIE
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
型号 制造商 描述 库存 价格
CGH60030D-GP4
DISTI # V36:1790_22799856
Cree, Inc.RF POWER TRANSISTOR0
  • 25000:$72.6400
  • 5000:$74.4300
  • 500:$78.6500
  • 50:$79.4300
CGH60030D-GP4
DISTI # CGH60030D-ND
WolfspeedRF MOSFET HEMT 28V DIE
RoHS: Compliant
Min Qty: 10
Container: Tray
110In Stock
  • 10:$65.1400
CGH60030D-GP4
DISTI # 941-CGH60030D
Cree, Inc.RF JFET Transistors GaN HEMT Die DC-6.0GHz, 30 Watt
RoHS: Compliant
30
  • 10:$73.0900
CGH60030D-GP4
DISTI # CGH60030D-GP4
WolfspeedRF POWER TRANSISTOR
RoHS: Compliant
0
  • 50:$66.5900
图片 型号 描述
CGH60008D-GP4

Mfr.#: CGH60008D-GP4

OMO.#: OMO-CGH60008D-GP4

RF JFET Transistors GaN HEMT Die DC-6.0GHz, 8 Watt
CGHV1J006D-GP4

Mfr.#: CGHV1J006D-GP4

OMO.#: OMO-CGHV1J006D-GP4

RF JFET Transistors GaN HEMT Die DC-18GHz, 6 Watt
CGH60015D-GP4

Mfr.#: CGH60015D-GP4

OMO.#: OMO-CGH60015D-GP4

RF JFET Transistors GaN HEMT Die DC-6.0GHz, 15 Watt
CGH60008D-GP4

Mfr.#: CGH60008D-GP4

OMO.#: OMO-CGH60008D-GP4-WOLFSPEED

RF MOSFET HEMT 28V DIE
CGH60015D-GP4

Mfr.#: CGH60015D-GP4

OMO.#: OMO-CGH60015D-GP4-WOLFSPEED

RF MOSFET HEMT 28V DIE
CGHV1J006D-GP4

Mfr.#: CGHV1J006D-GP4

OMO.#: OMO-CGHV1J006D-GP4-WOLFSPEED

RF MOSFET HEMT 40V DIE
可用性
库存:
30
订购:
2013
输入数量:
CGH60030D-GP4的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
10
US$73.09
US$730.90
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