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STU6N65M2

STU6N65M2
Mfr. #:
STU6N65M2
制造商:
STMicroelectronics
描述:
MOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
生命周期:
制造商新产品。
数据表:
STU6N65M2 数据表
交货:
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ECAD Model:
更多信息:
STU6N65M2 更多信息 STU6N65M2 Product Details
产品属性
属性值
制造商：
意法半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-251-3
晶体管极性：
N通道
Vds - 漏源击穿电压：
650 V
Id - 连续漏极电流：
4 A
Rds On - 漏源电阻：
1.35 Ohms
Vgs th - 栅源阈值电压：
3 V
Vgs - 栅源电压：
25 V
Qg - 门电荷：
9.8 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
60 W
商品名：
网状网
打包：
管子
产品：
功率MOSFET
系列：
STU6N65M2
品牌：
意法半导体
秋季时间：
20 ns
产品类别：
MOSFET
上升时间：
7 ns
出厂包装数量：
3000
子类别：
MOSFET
典型关断延迟时间：
6.5 ns
典型的开启延迟时间：
19 ns
单位重量：
0.139332 oz
Tags
STU6N65, STU6N6, STU6N, STU6, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET N-CH 650V 4A 3-Pin(3+Tab) IPAK Tube
***et Europe
Trans MOSFET N-CH 650V 4A 3-Pin IPAK Tube
***i-Key
MOSFET N-CH 650V 4A IPAK
***ronik
N-CH 650V 4A 1350mOhm TO251
***ark
Ptd High Voltage
***ment14 APAC
Prices include import duty and tax. MOSFET, N CHANNEL, 650V, 4A, TO-251-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-251; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)
***nell
MOSFET, CANALE N, 650V, 4A, TO-251-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:4A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):1.2ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:60W; Modello Case Transistor:TO-251; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
MDmesh™ II Power MOSFETs
STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
型号 制造商 描述 库存 价格
STU6N65M2
DISTI # 30609733		STMicroelectronicsTrans MOSFET N-CH 650V 4A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		50
  • 50:$0.8377
  • 13:$1.0863
STU6N65M2
DISTI # 497-15044-5-ND		STMicroelectronicsMOSFET N-CH 650V 4A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		770In Stock
  • 1050:$0.7013
  • 525:$0.8882
  • 150:$1.1454
  • 75:$1.3091
  • 1:$1.6400
STU6N65M2
DISTI # C1S730200975386		STMicroelectronicsTrans MOSFET N-CH 650V 4A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		50
  • 50:$0.6630
  • 10:$0.8590
  • 1:$1.6500
STU6N65M2
DISTI # STU6N65M2		STMicroelectronicsTrans MOSFET N-CH 650V 4A 3-Pin IPAK Tube - Rail/Tube (Alt: STU6N65M2)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 3000:$0.6369
  • 6000:$0.6069
  • 12000:$0.5789
  • 18000:$0.5539
  • 30000:$0.5419
STU6N65M2
DISTI # 40Y2611		STMicroelectronicsPower MOSFET, N Channel, 4 A, 650 V, 1.2 ohm, 10 V, 3 V RoHS Compliant: Yes1382
  • 1:$1.4000
  • 10:$1.1900
  • 100:$0.9140
  • 500:$0.8080
  • 1000:$0.6380
  • 2500:$0.5920
  • 10000:$0.5450
STU6N65M2
DISTI # 511-STU6N65M2		STMicroelectronicsMOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
RoHS: Compliant		2523
  • 1:$1.4000
  • 10:$1.1900
  • 100:$0.9140
  • 500:$0.8080
  • 1000:$0.6380
  • 3000:$0.5660
  • 9000:$0.5450
STU6N65M2-S
DISTI # 511-STU6N65M2-S		STMicroelectronicsMOSFET0
  • 3000:$0.4130
STU6N65M2STMicroelectronics 812
    STU6N65M2ST Microwave CorporationPower Field-Effect Transistor
    RoHS: Compliant    		Europe - 3000
      STU6N65M2STMicroelectronics 3544
        STU6N65M2
        DISTI # 2460384        		STMicroelectronicsMOSFET, N CHANNEL, 650V, 4A, TO-251-3
        RoHS: Compliant        		1382
        • 1:$2.2200
        • 10:$1.8800
        • 100:$1.4500
        • 500:$1.2900
        • 1000:$1.0100
        • 3000:$0.8960
        • 9000:$0.8630
        STU6N65M2
        DISTI # 2460384        		STMicroelectronicsMOSFET, N CHANNEL, 650V, 4A, TO-251-3
        RoHS: Compliant        		1406
        • 5:£1.0500
        • 25:£0.9490
        • 100:£0.7310
        • 250:£0.6880
        • 500:£0.6450
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        可用性
        库存:
        Available
        订购:
        1500
        输入数量:
        STU6N65M2的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格（美元）
        数量
        单价
        小计金额
        1
        US$1.40
        US$1.40
        10
        US$1.19
        US$11.90
        100
        US$0.91
        US$91.40
        500
        US$0.81
        US$404.00
        1000
        US$0.64
        US$638.00
        3000
        US$0.57
        US$1 698.00
        9000
        US$0.54
        US$4 905.00
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