STGW30H65FB

Mfr. #:: STGW30H65FB
制造商:: STMicroelectronics
描述:: IGBT Transistors IGBT & Power Bipola
生命周期:: 制造商新产品。
数据表:: STGW30H65FB 数据表
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ECAD Model:
更多信息:: STGW30H65FB 更多信息 STGW30H65FB Product Details

产品属性
属性值

制造商: 意法半导体

产品分类: IGBT - 单

系列: 600-650V IGBTs

打包: 管子

单位重量: 1.340411 oz

安装方式: 通孔

包装盒: TO-247-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-247

配置: 单身的

最大功率: 260W

反向恢复时间trr: -

电流收集器 Ic-Max: 30A

电压收集器发射极击穿最大值: 650V

IGBT型: 海沟场停止

电流收集器脉冲Icm: 120A

Vce-on-Max-Vge-Ic: 2V @ 15V, 30A

开关能源: 151μJ (on), 293μJ (off)

栅极电荷: 149nC

Td-on-off-25°C: 37ns/146ns

测试条件: 400V, 30A, 10 Ohm, 15V

钯功耗: 260 W

最高工作温度: + 175 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 650 V

集电极-发射极-饱和-电压: 1.75 V

25-C 时的连续集电极电流: 30 A

栅极-发射极-漏电流: 250 nA

最大栅极发射极电压: +/- 20 V

连续集电极电流 Ic-Max: 60 A

Tags: STGW30H, STGW30, STGW3, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGW30H65FB 更多信息

IGBT HB/HB2 Series: STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.

Market price

型号	制造商	描述	库存	价格
STGW30H65FB DISTI # V99:2348_17621591	STMicroelectronics	Trans IGBT Chip N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	480	2500:$1.6510 1000:$1.6740 500:$2.0030 250:$2.2620 100:$2.3340 10:$2.7460 1:$3.5497
STGW30H65FB DISTI # V36:1790_06560746	STMicroelectronics	Trans IGBT Chip N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0
STGW30H65FB DISTI # 497-14467-5-ND	STMicroelectronics	IGBT 650V 30A 260W TO-247 RoHS: Compliant Min Qty: 1 Container: Tube	46In Stock	2520:$1.7220 510:$2.1439 120:$2.5184 30:$2.9060 10:$3.0740 1:$3.4200
STGW30H65FB DISTI # 32021364	STMicroelectronics	Trans IGBT Chip N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	480	2500:$1.7748 1000:$1.7995 500:$2.1532 250:$2.4316 100:$2.5090 10:$2.9520 4:$3.4690
STGW30H65FB DISTI # STGW30H65FB	STMicroelectronics	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube (Alt: STGW30H65FB) RoHS: Compliant Min Qty: 30 Container: Tube	Europe - 600	180:€1.5900 300:€1.5900 60:€1.6900 120:€1.6900 30:€1.7900
STGW30H65FB DISTI # STGW30H65FB	STMicroelectronics	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW30H65FB) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	6000:$1.4900 2400:$1.5900 3600:$1.5900 1200:$1.6900 600:$1.7900
STGW30H65FB DISTI # 55X3476	STMicroelectronics	PTD HIGH VOLTAGE	0	500:$1.6000 250:$1.6500 100:$1.9700 50:$2.2800 25:$2.4300 10:$2.7700 1:$3.2000
STGW30H65FB DISTI # 511-STGW30H65FB	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed RoHS: Compliant	249	1:$3.2500 10:$2.7600 100:$2.3900 250:$2.2700 500:$2.0400 1000:$1.7200 2500:$1.6300 5000:$1.5700
STGW30H65FB	STMicroelectronics		14499
STGW30H65FB DISTI # XSKDRABV0027577	STMicroelectronics	RoHS: Compliant	480 in Stock0 on Order	480:$2.7360 300:$2.9280
STGW30H65FB	STMicroelectronics	Insulated Gate Bipolar Transistor RoHS: Compliant	Europe - 600
STGW30H65FB DISTI # IGBT1561	STMicroelectronics	IGBT 650V 30A 1,55VTO247-3	Stock DE - 0Stock HK - 0Stock US - 0	600:$1.8200

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