IRFHM792TRPBF

Mfr. #:: IRFHM792TRPBF
制造商:: Infineon Technologies
描述:: RF Bipolar Transistors MOSFET 100V DUAL N-CH HEXFET
生命周期:: 制造商新产品。
数据表:: IRFHM792TRPBF 数据表
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产品属性
属性值

制造商: 英飞凌科技

产品分类: FET - 阵列

系列: 十六进制

打包: 卷带 (TR)

安装方式: 贴片/贴片

包装盒: 8-PowerVDFN

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: 8-PQFN (3.3x3.3), Power33

配置: 双重的

FET型: 2 N-Channel (Dual)

最大功率: 2.3W

晶体管型: 2 N-Channel

漏源电压 Vdss: 100V

输入电容-Ciss-Vds: 251pF @ 25V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 2.3A

Rds-On-Max-Id-Vgs: 195 mOhm @ 2.9A, 10V

Vgs-th-Max-Id: 4V @ 10μA

栅极电荷-Qg-Vgs: 6.3nC @ 10V

钯功耗: 2.3 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 2.6 ns

上升时间: 4.7 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 2.3 A

Vds-漏-源-击穿电压: 100 V

VGS-th-Gate-Source-Threshold-Voltage: 3 V

Rds-On-Drain-Source-Resistance: 195 mOhms

晶体管极性: N通道

典型关断延迟时间: 5.2 ns

典型开启延迟时间: 3.4 ns

Qg-门电荷: 4.2 nC

正向跨导最小值: 3.5 S

Tags: IRFHM79, IRFHM7, IRFHM, IRFH, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFHM792TRPBF 描述

***ure Electronics: Dual N-Channel 100 V 195 mOhm 6.3 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ernational Rectifier: 100V Dual N-Channel HEXFET Power MOSFET in a PQFN 3.3mm x3.3mm Lead Free package

***et: Trans MOSFET N-CH 100V 2.3A 8-Pin PQFN T/R

***ark: N CH MOSFET, DUAL, 100V, 3.4A, PQFN-8; Transistor Polarity:N Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.164ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified INDUSTRIAL; Qualified MSL1; Dual N-Channel MOSFET

Market price

型号	制造商	描述	库存	价格
IRFHM792TRPBF DISTI # IRFHM792TRPBF-ND	Infineon Technologies AG	MOSFET 2N-CH 100V 2.3A 8PQFN RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Temporarily Out of Stock	4000:$0.9263
IRFHM792TRPBF DISTI # IRFHM792TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 2.3A 8-Pin PQFN T/R - Tape and Reel (Alt: IRFHM792TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.7189 8000:$0.6929 16000:$0.6679 24000:$0.6449 40000:$0.6339
IRFHM792TRPBF DISTI # SP001554848	Infineon Technologies AG	Trans MOSFET N-CH 100V 2.3A 8-Pin PQFN T/R (Alt: SP001554848) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€0.9309 8000:€0.7609 16000:€0.6979 24000:€0.6439 40000:€0.5979
IRFHM792TRPBF DISTI # 942-IRFHM792TRPBF	Infineon Technologies AG	MOSFET 100V DUAL N-CH HEXFET RoHS: Compliant	161	1:$1.8800 10:$1.6000 100:$1.2800 500:$1.1200 1000:$0.9300 4000:$0.8300

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