STF9HN65M2

STF9HN65M2
Mfr. #:
STF9HN65M2
制造商:
STMicroelectronics
描述:
MOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in TO-220FP package
生命周期:
制造商新产品。
数据表:
STF9HN65M2 数据表
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HTML Datasheet:
STF9HN65M2 DatasheetSTF9HN65M2 Datasheet (P4-P6)STF9HN65M2 Datasheet (P7-P9)STF9HN65M2 Datasheet (P10-P12)STF9HN65M2 Datasheet (P13)
ECAD Model:
更多信息:
STF9HN65M2 更多信息 STF9HN65M2 Product Details
产品属性
属性值
制造商:
意法半导体
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
通孔
包装/案例:
TO-220-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
600 V
Id - 连续漏极电流:
5.5 A
Rds On - 漏源电阻:
820 mOhms
Vgs th - 栅源阈值电压:
4 V
Vgs - 栅源电压:
25 V
Qg - 门电荷:
11.5 nC
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
Pd - 功耗:
20 W
配置:
单身的
频道模式:
增强
商品名:
网状网
打包:
管子
高度:
4.6 mm
长度:
16.4 mm
产品:
功率MOSFET
系列:
STF9HN65M2
晶体管类型:
1 N-Channel
类型:
MDmesh M2
宽度:
10.4 mm
品牌:
意法半导体
秋季时间:
14.5 ns
产品类别:
MOSFET
上升时间:
4.6 ns
出厂包装数量:
1000
子类别:
MOSFET
典型关断延迟时间:
24 ns
典型的开启延迟时间:
7.5 ns
单位重量:
0.011640 oz
Tags
STF9, STF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in TO-220FP package
***ical
Trans MOSFET N-CH 650V 5.5A 3-Pin(3+Tab) TO-220FP Tube
***el Electronic
2.2µF ±20% 16V JB Ceramic Capacitor -25°C ~ 85°C Surface Mount, MLCC 0805 (2012 Metric) 0.079" L x 0.049" W (2.00mm x 1.25mm)
***icroelectronics
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP package
***ure Electronics
N-Channel 650 V 7 A 25 W Through Hole MDmesh M2 Power MOSFET - TO-220FP
*** Electronics
STMICROELECTRONICS STF11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
***ical
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N CHANNEL, 650V, 7A, TO-250FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
***icroelectronics
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220 package
***ark
Power Mosfet, N Channel, 7 A, 650 V, 0.6 Ohm, 10 V, 3 V Rohs Compliant: Yes
***el Electronic
Low Power, Wideband, Voltage Feedback Operational Amplifier with Disable 6-SOT-23 -40 to 85
*** Electronics
STMICROELECTRONICS STP11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
***ical
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220AB Tube
***nell
MOSFET, N CHANNEL, 650V, 7A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 85W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***itex
Transistor: N-MOSFET; unipolar; 650V; 10.1A; 0.65ohm; 28W; -40+150 deg.C; THT; TO220F
***ark
Mosfet, N-Ch, 650V, 10.1A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:10.1A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***ure Electronics
N-Channel 600 V 5.6 A 800 mO 17.2 nC CoolMOS CE Power Transistor - TO-220FP
***ical
Trans MOSFET N-CH 600V 8.4A 3-Pin(3+Tab) TO-220FP Tube
***ark
Mosfet, N-Ch, 600V, 8.4A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.68Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***ical
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220FP
***ark
Mosfet, N-Ch, 500V, 7.6A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:500V; On Resistance Rds(On):0.72Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon SCT
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO220-3, RoHS
***ineon
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox
***icroelectronics
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220FP package
*** Electronics
STMICROELECTRONICS STF9N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
***ure Electronics
N-Channel 650 V 900 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP
***ical
Trans MOSFET N-CH 650V 5A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N CHANNEL, 650V, 5A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.79ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
MDmesh™ II Power MOSFETs
STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
型号 制造商 描述 库存 价格
STF9HN65M2
DISTI # V99:2348_17628778
STMicroelectronicsTrans MOSFET N-CH 650V 5.5A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant
30
  • 1:$0.5101
STF9HN65M2
DISTI # V36:1790_13796776
STMicroelectronicsTrans MOSFET N-CH 650V 5.5A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant
0
  • 2000000:$0.4303
  • 1000000:$0.4330
  • 200000:$0.6708
  • 20000:$1.0900
  • 2000:$1.1600
STF9HN65M2
DISTI # 497-16014-5-ND
STMicroelectronicsMOSFET N-CH 650V 5.5A TO-220FP
RoHS: Compliant
Min Qty: 1
Container: Tube
171In Stock
  • 5000:$0.4958
  • 2500:$0.5219
  • 500:$0.7082
  • 100:$0.8573
  • 50:$1.0438
  • 10:$1.1000
  • 1:$1.2300
STF9HN65M2
DISTI # 25948473
STMicroelectronicsTrans MOSFET N-CH 650V 5.5A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant
30
  • 13:$0.5101
STF9HN65M2
DISTI # STF9HN65M2
STMicroelectronicsTrans MOSFET N-CH 600V 5.5A 3-Pin TO-220FP Tube (Alt: STF9HN65M2)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€0.5829
  • 500:€0.5999
  • 100:€0.6279
  • 50:€0.6669
  • 25:€0.7839
  • 10:€0.9789
  • 1:€1.5249
STF9HN65M2
DISTI # STF9HN65M2
STMicroelectronicsTrans MOSFET N-CH 600V 5.5A 3-Pin TO-220FP Tube - Rail/Tube (Alt: STF9HN65M2)
RoHS: Not Compliant
Min Qty: 2000
Container: Tube
Americas - 0
  • 20000:$0.4529
  • 10000:$0.4619
  • 6000:$0.4839
  • 4000:$0.5069
  • 2000:$0.5319
STF9HN65M2
DISTI # 56Y0949
STMicroelectronicsPTD HIGH VOLTAGE0
  • 10000:$0.4620
  • 2500:$0.4760
  • 1000:$0.5900
  • 500:$0.6750
  • 100:$0.7640
  • 10:$0.9940
  • 1:$1.1600
STF9HN65M2
DISTI # 511-STF9HN65M2
STMicroelectronicsMOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in TO-220FP package
RoHS: Compliant
1917
  • 1:$1.1600
  • 10:$0.9940
  • 100:$0.7640
  • 500:$0.6750
  • 1000:$0.5330
  • 2000:$0.4730
  • 10000:$0.4550
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STU9HN65M2

Mfr.#: STU9HN65M2

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MOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package
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Mfr.#: BDB08

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DIP Switches / SIP Switches DIP 8P Standard Vertical Profile Red
FG28X5R1H105KRT00

Mfr.#: FG28X5R1H105KRT00

OMO.#: OMO-FG28X5R1H105KRT00

Multilayer Ceramic Capacitors MLCC - Leaded RAD 50V 1uF X5R 10% LS:5mm
EEU-FS1E122

Mfr.#: EEU-FS1E122

OMO.#: OMO-EEU-FS1E122-PANASONIC

CAP ALUM 1200UF 20% 25V T/H
CFR-25JT-52-1K2

Mfr.#: CFR-25JT-52-1K2

OMO.#: OMO-CFR-25JT-52-1K2-YAGEO

CFR-25 1,2K 5% 0,33W 0207
CFR-25JT-52-100K

Mfr.#: CFR-25JT-52-100K

OMO.#: OMO-CFR-25JT-52-100K-YAGEO

Res Carbon Film 100K Ohm 5% 0.25W(1/4W) -700ppm/C to 0ppm/C Conformal Coated AXL Ammo
MBR5200VPTR-E1

Mfr.#: MBR5200VPTR-E1

OMO.#: OMO-MBR5200VPTR-E1-DIODES

DIODE SCHOTTKY 200V 5A DO27
可用性
库存:
Available
订购:
1984
输入数量:
STF9HN65M2的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$1.16
US$1.16
10
US$0.99
US$9.94
100
US$0.76
US$76.40
500
US$0.68
US$337.50
1000
US$0.53
US$533.00
2000
US$0.47
US$946.00
10000
US$0.46
US$4 550.00
25000
US$0.44
US$11 025.00
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