IXFH20N60

Mfr. #:: IXFH20N60
制造商:: Littelfuse
描述:: MOSFET 600V 20A
生命周期:: 制造商新产品。
数据表:: IXFH20N60 数据表
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ECAD Model:

产品属性
属性值

制造商: IXYS

产品分类: FET - 单

系列: IXFH20N60

打包: 管子

单位重量: 0.229281 oz

安装方式: 通孔

商品名: 超场效应晶体管

包装盒: TO-247-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 300 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 40 ns

上升时间: 43 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 20 A

Vds-漏-源-击穿电压: 600 V

Rds-On-Drain-Source-Resistance: 350 mOhms

晶体管极性: N通道

典型关断延迟时间: 70 ns

典型开启延迟时间: 20 ns

正向跨导最小值: 18 S

通道模式: 增强

Tags: IXFH20N6, IXFH20N, IXFH20, IXFH2, IXFH, IXF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXFH20N60 描述

***ical: Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-247AD

***ark: MOSFET, N, TO-247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:20A; Resistance, Rds On:0.35ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4.5V; Case Style:TO-247; Termination ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):350mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; Current Id Max:20A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:151nC; No. of Transistors:1; On State Resistance Max:350mohm; Package / Case:TO-247; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:60A; Rate of Voltage Change dv / dt:5V/ns; Repetitive Avalanche Energy Max:30mJ; Reverse Recovery Time trr Typ:250ns; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Weight:6g

Market price

型号	制造商	描述	库存	价格
IXFH20N60 DISTI # IXFH20N60-ND	IXYS Corporation	MOSFET N-CH 600V 20A TO-247AD RoHS: Compliant Min Qty: 30 Container: Tube	Limited Supply - Call
IXFH20N60Q DISTI # IXFH20N60Q-ND	IXYS Corporation	MOSFET N-CH 600V 20A TO-247 RoHS: Compliant Min Qty: 30 Container: Tube	Limited Supply - Call
IXFH20N60 DISTI # 747-IXFH20N60	IXYS Corporation	MOSFET 600V 20A RoHS: Compliant	0
IXFH20N60Q DISTI # 747-IXFH20N60Q	IXYS Corporation	MOSFET 20 Amps 600V 0.35 Rds RoHS: Compliant	0
IXFH20N60	IXYS Corporation		16
IXFH20N60	IXYS Corporation	MOSFET Transistor, N-Channel, TO-247AD	73	31:$5.8110 4:$6.7050 1:$13.4100
IXFH20N60	IXYS Corporation	MOSFET Transistor, N-Channel, TO-247AD	7	4:$6.7050 2:$8.9400 1:$13.4100
IXFH20N60	IXYS Corporation	INSTOCK	100

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