SI7962DP-T1-E3

SI7962DP-T1-E3
Mfr. #:
SI7962DP-T1-E3
制造商:
Vishay / Siliconix
描述:
MOSFET DUAL N-CH 40V (D-S) HIGH THRESHOLD
生命周期:
制造商新产品。
数据表:
SI7962DP-T1-E3 数据表
交货:
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HTML Datasheet:
SI7962DP-T1-E3 DatasheetSI7962DP-T1-E3 Datasheet (P4-P6)
ECAD Model:
产品属性
属性值
制造商:
威世
产品分类:
MOSFET
RoHS:
E
技术:
商品名:
沟槽场效应晶体管
打包:
卷轴
系列:
SI7
品牌:
威世 / Siliconix
产品类别:
MOSFET
出厂包装数量:
3000
子类别:
MOSFET
第 # 部分别名:
SI7962DP-E3
单位重量:
0.017870 oz
Tags
SI7962, SI796, SI79, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET 2N-CH 40V 7.1A PPAK SO-8
***ark
Transistor; Continuous Drain Current, Id:11100mA; Drain Source Voltage, Vds:40V; On Resistance, Rds(on):0.017ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:4.5V; Power Dissipation, Pd:1.4W ;RoHS Compliant: Yes
型号 制造商 描述 库存 价格
SI7962DP-T1-E3
DISTI # SI7962DP-T1-E3TR-ND
Vishay SiliconixMOSFET 2N-CH 40V 7.1A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$1.8873
SI7962DP-T1-E3
DISTI # 781-SI7962DP-T1-E3
Vishay IntertechnologiesMOSFET DUAL N-CH 40V (D-S) HIGH THRESHOLD
RoHS: Compliant
0
  • 3000:$1.7200
图片 型号 描述
SI7962DP-T1-E3

Mfr.#: SI7962DP-T1-E3

OMO.#: OMO-SI7962DP-T1-E3

MOSFET DUAL N-CH 40V (D-S) HIGH THRESHOLD
SI7962DP-T1-GE3

Mfr.#: SI7962DP-T1-GE3

OMO.#: OMO-SI7962DP-T1-GE3

MOSFET 40V 11.1A 3.5W 17mohm @ 10V
SI7962DP-T1-GE3

Mfr.#: SI7962DP-T1-GE3

OMO.#: OMO-SI7962DP-T1-GE3-317

RF Bipolar Transistors MOSFET 40V 11.1A 3.5W 17mohm @ 10V
SI7962DP-T1-E3

Mfr.#: SI7962DP-T1-E3

OMO.#: OMO-SI7962DP-T1-E3-VISHAY

RF Bipolar Transistors MOSFET DUAL N-CH 40V (D-S) HIGH THRESHOLD
可用性
库存:
Available
订购:
2500
输入数量:
SI7962DP-T1-E3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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