SIHB30N60AEL-GE3

SIHB30N60AEL-GE3
Mfr. #:
SIHB30N60AEL-GE3
制造商:
Vishay
描述:
MOSFET N-CHAN 600V D2PAK
生命周期:
制造商新产品。
数据表:
SIHB30N60AEL-GE3 数据表
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ECAD Model:
更多信息:
SIHB30N60AEL-GE3 更多信息
产品属性
属性值
Tags
SIHB30, SIHB3, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
EL Series High Voltage MOSFETs
Vishay Semiconductors EL Series High Voltage MOSFETs are N-channel MOSFETs that reduces switching and conduction losses. These high voltage MOSFETs feature low Figure-Of-Merit (FOM), low input capacitance, and low gate charge. The EL high voltage MOSFETs operate in 650V drain-to-source voltage (VDS) and employs single configuration. These high voltage MOSFETs come with Unclamped Inductive Switching (UIS) avalanche energy rating. Typical applications include server and telecom power supplies, lighting, welding, induction heating, motor drives, and battery chargers.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型号 制造商 描述 库存 价格
SIHB30N60AEL-GE3
DISTI # V36:1790_22298405
Vishay IntertechnologiesEL Series Power MOSFET D2PAK (TO-263), 120 m¿ @ 10V0
    SIHB30N60AEL-GE3
    DISTI # SIHB30N60AEL-GE3CT-ND
    Vishay SiliconixMOSFET N-CHAN 600V D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    28In Stock
    • 500:$3.9137
    • 100:$4.5975
    • 10:$5.6110
    • 1:$6.2500
    SIHB30N60AEL-GE3
    DISTI # SIHB30N60AEL-GE3DKR-ND
    Vishay SiliconixMOSFET N-CHAN 600V D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    28In Stock
    • 500:$3.9137
    • 100:$4.5975
    • 10:$5.6110
    • 1:$6.2500
    SIHB30N60AEL-GE3
    DISTI # SIHB30N60AEL-GE3TR-ND
    Vishay SiliconixMOSFET N-CHAN 600V D2PAK
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 2000:$3.0520
    • 1000:$3.2046
    SIHB30N60AEL-GE3
    DISTI # 59AC7371
    Vishay IntertechnologiesN-CHANNEL 600V0
    • 2500:$2.7700
    • 1000:$2.9900
    • 500:$3.3600
    • 100:$3.7100
    • 50:$4.1900
    • 25:$4.5400
    • 10:$4.9100
    • 1:$5.5400
    SIHB30N60AEL-GE3
    DISTI # 78-SIHB30N60AEL-GE3
    Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant
    654
    • 1:$6.1000
    • 10:$5.0500
    • 100:$4.1600
    • 250:$4.0300
    • 500:$3.6100
    • 1000:$3.0500
    • 2500:$2.8900
    SIHB30N60AEL-GE3
    DISTI # 2932920
    Vishay IntertechnologiesMOSFET, N-CH, 600V, 28A, 150DEG C, 250W
    RoHS: Compliant
    2
    • 500:£2.8100
    • 250:£3.1400
    • 100:£3.2300
    • 10:£3.9300
    • 1:£5.2400
    图片 型号 描述
    SIHB30N60AEL-GE3

    Mfr.#: SIHB30N60AEL-GE3

    OMO.#: OMO-SIHB30N60AEL-GE3

    MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB30N60E-E3

    Mfr.#: SIHB30N60E-E3

    OMO.#: OMO-SIHB30N60E-E3

    MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB30N60E-E3

    Mfr.#: SIHB30N60E-E3

    OMO.#: OMO-SIHB30N60E-E3-VISHAY

    RF Bipolar Transistors MOSFET N-Channel 600V
    SIHB30N60AEL-GE3

    Mfr.#: SIHB30N60AEL-GE3

    OMO.#: OMO-SIHB30N60AEL-GE3-VISHAY

    MOSFET N-CHAN 600V D2PAK
    SIHB30N60E-GE3-CUT TAPE

    Mfr.#: SIHB30N60E-GE3-CUT TAPE

    OMO.#: OMO-SIHB30N60E-GE3-CUT-TAPE-1190

    全新原装
    SIHB30N60E

    Mfr.#: SIHB30N60E

    OMO.#: OMO-SIHB30N60E-1190

    全新原装
    SIHB30N60E-GE3

    Mfr.#: SIHB30N60E-GE3

    OMO.#: OMO-SIHB30N60E-GE3-VISHAY

    MOSFET N-CH 600V 29A D2PAK
    SIHB30N60EGE3

    Mfr.#: SIHB30N60EGE3

    OMO.#: OMO-SIHB30N60EGE3-1190

    Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    可用性
    库存:
    Available
    订购:
    5500
    输入数量:
    SIHB30N60AEL-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$4.16
    US$4.16
    10
    US$3.95
    US$39.47
    100
    US$3.74
    US$373.95
    500
    US$3.53
    US$1 765.90
    1000
    US$3.32
    US$3 324.00
    由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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