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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| SIHB30N60E-GE3 DISTI # V36:1790_09219022 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D2PAK RoHS: Compliant | 0 |
|
| SIHB30N60E-GE3 DISTI # SIHB30N60E-GE3-ND | Vishay Siliconix | MOSFET N-CH 600V 29A D2PAK Min Qty: 1 Container: Tube | 596In Stock |
|
| SIHB30N60E-E3 DISTI # SIHB30N60E-E3-ND | Vishay Siliconix | MOSFET N-CH 600V 29A D2PAK Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SIHB30N60E-E3 DISTI # SIHB30N60E-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 29A 3-Pin D2PAK - Tape and Reel (Alt: SIHB30N60E-E3) RoHS: Not Compliant Min Qty: 1000 Container: Reel | Americas - 0 | |
| SIHB30N60E-GE3 DISTI # SIHB30N60E-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: SIHB30N60E-GE3) RoHS: Not Compliant Min Qty: 1000 Container: Tube | Americas - 0 |
|
| SIHB30N60ET5-GE3 DISTI # 59AC7373 | Vishay Intertechnologies | N-CHANNEL 600V RoHS: Not Compliant | 0 |
|
| SIHB30N60ET1-GE3 DISTI # 59AC7372 | Vishay Intertechnologies | N-CHANNEL 600V RoHS: Not Compliant | 0 |
|
| SIHB30N60E-GE3 DISTI # 78-SIHB30N60E-GE3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | 156 |
|
| SIHB30N60E-GE3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | Americas - | |
| SIHB30N60E-GE3 DISTI # 7689310 | Vishay Intertechnologies | N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK Vishay SIHB30N60E-GE3, EA Min Qty: 1 Container: Bulk | 187 |
|
| SIHB30N60E-GE3 DISTI # 1451820 | Vishay Intertechnologies | In a Tube of 50, N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK Vishay SIHB30N60E-GE3, TU Min Qty: 50 Container: Tube | 0 |
|
| SIHB30N60E-GE3 | Vishay Intertechnologies | 96 | ||
| SIHB30N60E-GE3 | Vishay Intertechnologies | 1000 | ||
| SIHB30N60E-GE3 DISTI # 2079779 | Vishay Intertechnologies | MOSFET, N CH, 600V, 29A, D2PAK RoHS: Compliant | 0 |
|
| SIHB30N60EGE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | Europe - 1000 |
| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: SIHB35N60EF-GE3 OMO.#: OMO-SIHB35N60EF-GE3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
|
Mfr.#: SIHB33N60EF-GE3 OMO.#: OMO-SIHB33N60EF-GE3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
|
Mfr.#: SIHB30N60AEL-GE3 OMO.#: OMO-SIHB30N60AEL-GE3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
|
|
Mfr.#: SIHB33N60E-GE3 OMO.#: OMO-SIHB33N60E-GE3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
|
|
Mfr.#: SIHB30N60E-E3 OMO.#: OMO-SIHB30N60E-E3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
|
Mfr.#: SIHB33N60E-E3 OMO.#: OMO-SIHB33N60E-E3-317 |
RF Bipolar Transistors MOSFET N-Channel 600V |
|
Mfr.#: SIHB30N60E-GE3 OMO.#: OMO-SIHB30N60E-GE3-VISHAY |
MOSFET N-CH 600V 29A D2PAK |
|
|
Mfr.#: SIHB33N60E OMO.#: OMO-SIHB33N60E-1190 |
N-CH 600V 99mOhm 33A TO263 |
|
|
Mfr.#: SIHB33N60E-GE3 OMO.#: OMO-SIHB33N60E-GE3-VISHAY |
MOSFET N-CH 600V 33A TO-263 |
|
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Mfr.#: SIHB33N60ET5-GE3 OMO.#: OMO-SIHB33N60ET5-GE3-VISHAY |
MOSFET N-CH 600V 33A TO263 |