STF11NM65N

STF11NM65N
Mfr. #:
STF11NM65N
制造商:
STMicroelectronics
描述:
MOSFET N-Channel 650V Pwr Mosfet
生命周期:
制造商新产品。
数据表:
STF11NM65N 数据表
交货:
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ECAD Model:
更多信息:
STF11NM65N 更多信息 STF11NM65N Product Details
产品属性
属性值
制造商:
意法半导体
产品分类:
MOSFET
RoHS:
N
技术:
安装方式:
通孔
包装/案例:
TO-220-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
650 V
Id - 连续漏极电流:
12 A
Rds On - 漏源电阻:
380 mOhms
Vgs - 栅源电压:
25 V
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
Pd - 功耗:
30 W
配置:
单身的
频道模式:
增强
商品名:
网状网
打包:
管子
系列:
STF11NM65N
晶体管类型:
1 N-Channel
品牌:
意法半导体
秋季时间:
20 ns
产品类别:
MOSFET
上升时间:
13 ns
出厂包装数量:
1000
子类别:
MOSFET
典型关断延迟时间:
55 ns
典型的开启延迟时间:
11 ns
单位重量:
0.011640 oz
Tags
STF11NM65N, STF11NM65, STF11NM6, STF11NM, STF11N, STF11, STF1, STF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in TO-220FP package
***ical
Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220FP Tube
***r Electronics
Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 650 V, 0.308 Ohm typ., 11 A MDmesh M5 Power MOSFET in TO-220FP package
*** Source Electronics
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 650V 11A TO-220FP
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 11A I(D), 650V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N-CH, 650V, 11A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***icroelectronics
N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOSFET in TO-220FP package
***ure Electronics
Single N-Channel 650 V 30 W 33.3 nC Silicon Through Hole Mosfet - TO-220FP
*** Electronics
STMICROELECTRONICS STF15NM65N Power MOSFET, N Channel, 12 A, 650 V, 0.35 ohm, 10 V, 3 V
***ical
Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220FP Tube
***ponent Stockers USA
12 A 650 V 0.38 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N CH, 650V, 12A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
***icroelectronics
N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in TO-220FP package
***ure Electronics
N-Channel 650 V 430 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP
***ical
Trans MOSFET N-CH 650V 10A 3-Pin(3+Tab) TO-220FP Tube
***(Formerly Allied Electronics)
MOSFET N-Ch 650V 10A MDmesh M2 TO-220FP
***r Electronics
Power Field-Effect Transistor, 10A I(D), 650V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N-CH, 650V, 10A, 150DEG C, 25W; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
***et
CoolMOS E6 Power Transistor N-Channel 600V 9.2A 3-Pin TO-220FP
***el Electronic
Trans MOSFET N-CH 650V 9.2A 3-Pin(3+Tab) TO-220 Full-Pack
***ineon SCT
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS
***ineon
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***emi
N-Channel Power MOSFET, UniFETTM, 650V, 15A, 440 mΩ, TO-220F
***ark
MOSFET Transistor, N Channel, 15 A, 650 V, 0.36 ohm, 10 V, 5 V
***r Electronics
Power Field-Effect Transistor, 15A I(D), 650V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N-CH, 650V, 15A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 15A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.36ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ical
Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220FP Tube
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***ark
MOSFET, N, TO-220; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:550V; Current, Id Cont:10A; On State Resistance:0.35ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220; ;RoHS Compliant: Yes
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
型号 制造商 描述 库存 价格
STF11NM65N
DISTI # V79:2366_17780485
STMicroelectronicsTrans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant
1000
  • 100:$1.6048
  • 25:$1.7050
  • 10:$1.8866
  • 1:$2.1128
STF11NM65N
DISTI # STF11NM65N-ND
STMicroelectronicsMOSFET N-CH 650V TO-220FP
RoHS: Compliant
Min Qty: 1000
Container: Tube
Temporarily Out of Stock
  • 1000:$1.2760
STF11NM65N
DISTI # 26112915
STMicroelectronicsTrans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant
1000
  • 100:$1.6048
  • 25:$1.7050
  • 10:$1.8866
  • 7:$2.1128
STF11NM65N
DISTI # STF11NM65N
STMicroelectronicsTrans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220FP Tube - Rail/Tube (Alt: STF11NM65N)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$1.1989
  • 2000:$1.1419
  • 4000:$1.0909
  • 6000:$1.0429
  • 10000:$1.0209
STF11NM65N
DISTI # STF11NM65N
STMicroelectronicsTrans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220FP Tube (Alt: STF11NM65N)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1:€1.7009
  • 10:€1.0909
  • 25:€0.8739
  • 50:€0.7429
  • 100:€0.6999
  • 500:€0.6689
  • 1000:€0.6499
STF11NM65N
DISTI # 511-STF11NM65N
STMicroelectronicsMOSFET N-Channel 650V Pwr Mosfet
RoHS: Not compliant
0
  • 1:$2.3600
  • 10:$2.0000
  • 100:$1.6000
  • 500:$1.4100
  • 1000:$1.1600
STF11NM65NSTMicroelectronics 2687
  • 2257:$0.5700
  • 1054:$0.6650
  • 1:$1.9000
STF11NM65NSTMicroelectronics 3792
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    全新原装
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    可用性
    库存:
    100
    订购:
    2083
    输入数量:
    STF11NM65N的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$2.36
    US$2.36
    10
    US$2.00
    US$20.00
    100
    US$1.60
    US$160.00
    500
    US$1.41
    US$705.00
    1000
    US$1.16
    US$1 160.00
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