IHW30N160R2FKSA1

IHW30N160R2FKSA1
Mfr. #:
IHW30N160R2FKSA1
制造商:
Infineon Technologies
描述:
IGBT Transistors RC-IGBT MONO DIODE 1600V 30A
生命周期:
制造商新产品。
数据表:
IHW30N160R2FKSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IHW30N160R2FKSA1 DatasheetIHW30N160R2FKSA1 Datasheet (P4-P6)IHW30N160R2FKSA1 Datasheet (P7-P9)IHW30N160R2FKSA1 Datasheet (P10-P12)
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
TO-247-3
安装方式:
通孔
配置:
单身的
集电极-发射极电压 VCEO 最大值:
1600 V
集电极-发射极饱和电压:
1.8 V
最大栅极发射极电压:
20 V
25 C 时的连续集电极电流:
60 A
Pd - 功耗:
312 W
最低工作温度:
- 40 C
最高工作温度:
+ 175 C
系列:
600V TRENCHSTOP
打包:
管子
品牌:
英飞凌科技
栅极-发射极漏电流:
100 nA
产品类别:
IGBT晶体管
出厂包装数量:
240
子类别:
IGBT
商品名:
战壕
第 # 部分别名:
IHW30N160R2 IHW3N16R2XK SP000273701
单位重量:
0.191185 oz
Tags
IHW30N160R2, IHW30N16, IHW30N1, IHW30N, IHW3, IHW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
IHW30N160R2FKSA1
DISTI # V36:1790_06378532
Infineon Technologies AGTrans IGBT Chip N-CH 1600V 60A 312000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
8013
  • 500:$4.0500
  • 250:$4.5320
  • 100:$4.8190
  • 50:$5.3670
  • 25:$5.4530
  • 10:$5.7340
  • 1:$7.4778
IHW30N160R2FKSA1
DISTI # IHW30N160R2FKSA1-ND
Infineon Technologies AGIGBT 1600V 60A 312W TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube
Limited Supply - Call
  • 240:$4.3952
IHW30N160R2FKSA1
DISTI # 32439532
Infineon Technologies AGTrans IGBT Chip N-CH 1600V 60A 312000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
8013
  • 3:$7.4778
IHW30N160R2XK
DISTI # IHW30N160R2FKSA1
Infineon Technologies AGTrans IGBT Chip N-CH 1.6KV 60A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IHW30N160R2FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 1440:$2.6900
  • 2400:$2.6900
  • 960:$2.7900
  • 480:$2.8900
  • 240:$2.9900
IHW30N160R2FKSA1
DISTI # 13T9432
Infineon Technologies AGIGBT+ DIODE, 1.6KV, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:312W,Collector Emitter Voltage V(br)ceo:1.6kV,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes0
  • 500:$3.6000
  • 250:$4.0100
  • 100:$4.2200
  • 50:$4.4400
  • 25:$4.6600
  • 10:$4.8800
  • 1:$5.7400
IHW30N160R2FKSA1
DISTI # 726-IHW30N160R2FKSA1
Infineon Technologies AGIGBT Transistors RC-IGBT MONO DIODE 1600V 30A
RoHS: Compliant
2155
  • 1:$5.6800
  • 10:$4.8300
  • 100:$4.1800
  • 250:$3.9700
  • 500:$3.5600
IHW30N160R2
DISTI # 726-IHW30N160R2
Infineon Technologies AGIGBT Transistors RC-IGBT MONO DIODE 1600V 30A
RoHS: Compliant
1288
  • 1:$5.6800
  • 10:$4.8300
  • 100:$4.1800
  • 250:$3.9700
  • 500:$3.5600
IHW30N160R2FKSA1
DISTI # 7528334
Infineon Technologies AGTRANSISTOR IGBT N-CH 1.6KV 60A TO247, EA987
  • 10:£3.3100
  • 1:£5.5800
IHW30N160R2FKSA1
DISTI # 7528334P
Infineon Technologies AGTRANSISTOR IGBT N-CH 1.6KV 60A TO247, TU1460
  • 10:£3.3100
IHW30N160R2FKSA1
DISTI # 1832388
Infineon Technologies AGIGBT+ DIODE,1600V,30A,TO247
RoHS: Compliant
4500
  • 500:$5.3600
  • 250:$5.9800
  • 100:$6.3000
  • 10:$7.2800
  • 1:$8.5600
IHW30N160R2FKSA1
DISTI # XSKDRABV0052104
Infineon Technologies AG 
RoHS: Compliant
25806 in Stock0 on Order
  • 25806:$3.5400
  • 240:$3.8000
IHW30N160R2FKSA1
DISTI # 1832388
Infineon Technologies AGIGBT+ DIODE,1600V,30A,TO247
RoHS: Compliant
4500
  • 500:£2.7200
  • 250:£3.0300
  • 100:£3.1900
  • 10:£3.6900
  • 1:£4.7900
图片 型号 描述
TIP35C

Mfr.#: TIP35C

OMO.#: OMO-TIP35C

Bipolar Transistors - BJT NPN Gen Pur Power
IKP20N60T

Mfr.#: IKP20N60T

OMO.#: OMO-IKP20N60T

IGBT Transistors LOW LOSS DuoPack 600V 20A
IRGPS46160DPBF

Mfr.#: IRGPS46160DPBF

OMO.#: OMO-IRGPS46160DPBF

IGBT Transistors 600V TRENCH IGBT ULTRAFAST
IGT60R190D1SATMA1

Mfr.#: IGT60R190D1SATMA1

OMO.#: OMO-IGT60R190D1SATMA1

MOSFET 600V CoolGaN Power Transistor
IGLD60R070D1AUMA1

Mfr.#: IGLD60R070D1AUMA1

OMO.#: OMO-IGLD60R070D1AUMA1

MOSFET 600V CoolGaN Power Transistor
IDH08G65C6XKSA1

Mfr.#: IDH08G65C6XKSA1

OMO.#: OMO-IDH08G65C6XKSA1

Schottky Diodes & Rectifiers SIC DIODES
OMNI-UC

Mfr.#: OMNI-UC

OMO.#: OMO-OMNI-UC

Heat Sinks Universal Clip for omniKlip Heatsinks for any TO except TO-220
TIP35C

Mfr.#: TIP35C

OMO.#: OMO-TIP35C-STMICROELECTRONICS

TRANS NPN 100V 25A TO218AC
T60006-L2040-W422

Mfr.#: T60006-L2040-W422

OMO.#: OMO-T60006-L2040-W422-1161

EMI/RFI Suppressors & Ferrites Ferrite Toroids / Ferrite Rings Core 40x32x15 47.2uH@10kHz
IDH08G65C6XKSA1

Mfr.#: IDH08G65C6XKSA1

OMO.#: OMO-IDH08G65C6XKSA1-INFINEON-TECHNOLOGIES

DIODE SCHOTTKY 650V 20A TO220-2
可用性
库存:
Available
订购:
1985
输入数量:
IHW30N160R2FKSA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$5.68
US$5.68
10
US$4.83
US$48.30
100
US$4.18
US$418.00
250
US$3.97
US$992.50
500
US$3.56
US$1 780.00
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