STP26NM60N

Mfr. #:: STP26NM60N
制造商:: STMicroelectronics
描述:: MOSFET N-channel 600 V Mdmesh II Power
生命周期:: 制造商新产品。
数据表:: STP26NM60N 数据表
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更多信息:: STP26NM60N 更多信息 STP26NM60N Product Details

产品属性
属性值

制造商：: 意法半导体

产品分类：: MOSFET

RoHS：: Y

技术：: 硅

安装方式：: 通孔

包装/案例：: TO-220-3

通道数：: 1 Channel

晶体管极性：: N通道

Vds - 漏源击穿电压：: 600 V

Id - 连续漏极电流：: 20 A

Rds On - 漏源电阻：: 165 mOhms

Vgs - 栅源电压：: 25 V

最低工作温度：: - 55 C

最高工作温度：: + 150 C

Pd - 功耗：: 140 W

配置：: 单身的

频道模式：: 增强

商品名：: 网状网

高度：: 9.15 mm

长度：: 10.4 mm

系列：: STP26NM60N

晶体管类型：: 1 N-Channel

宽度：: 4.6 mm

品牌：: 意法半导体

秋季时间：: 50 ns

产品类别：: MOSFET

上升时间：: 25 ns

出厂包装数量：: 1000

子类别：: MOSFET

典型关断延迟时间：: 85 ns

典型的开启延迟时间：: 13 ns

单位重量：: 0.011640 oz

Tags: STP26NM, STP26N, STP26, STP2, STP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

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STP26NM60N 描述

***icroelectronics: N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-220 package

***ure Electronics: Single N-Channel 600 V 0.165 Ohm 60 nC 140 W Flange Mount Mosfet - TO-220-3

***enic: 600V 20A 140W 165m´Î@10V10A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***ark: MOSFET, N-CH, 600V, 10A, 150DEG C, 140W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 20A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ure Electronics: Single N-Channel 600 V 160 mOhm 44 nC CoolMOS Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 600V 23.8A Automotive 3-Pin(3+Tab) TO-220 Tube

***nell: MOSFET, N-CH, 600V, 23.8A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 23.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.144ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;

*** Stop Electro: Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHS

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***p One Stop: Trans MOSFET N-CH 650V 21A 3-Pin(3+Tab) TO-220 Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:650V; On Resistance Rds(on):165mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:192W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:21A; Package / Case:TO-220; Power Dissipation Pd:192W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in TO-220 package

***ark: Mosfet Transistor, N Channel, 21 A, 500 V, 0.135 Ohm, 10 V, 3 V Rohs Compliant: Yes

***ical: Trans MOSFET N-CH 500V 21A 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: N-Channel 500 V 0.158 O 50 nC Flange Mount MDmesh II Power MosFet - TO-220

***enic: 500V 21A 150W 158m´Î@10V10.5A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***nell: MOSFET, N CH, 500V, 21A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.135ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe

***r Electronics: Power Field-Effect Transistor, 21A I(D), 500V, 0.158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in TO-220 package

***ical: Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-220AB Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 22A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N-CH, 500V, 22A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 22A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 190W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh II Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)

***icroelectronics: N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package

***ure Electronics: N-Channel 600 V 130 mOhm Flange Mount MDmesh DM2 Power Mosfet -TO-220

***nell: MOSFET, N-CH, 600V, 24A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.11ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power

***r Electronics: Power Field-Effect Transistor, 24A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***emi: N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 16 A, 199 mΩ, TO-220

***Yang: Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

*** Stop Electro: Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET,N CH,600V,16A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:134.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:16A; Power Dissipation Pd:134.4W; Voltage Vgs Max:30V

***rchild Semiconductor: The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

STP26NM60N 更多信息

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

Market price

型号	制造商	描述	库存	价格
STP26NM60N DISTI # V36:1790_06564655	STMicroelectronics	Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	0	1000000:$2.7640 500000:$2.7680 100000:$3.1280 10000:$3.8050 1000:$3.9200
STP26NM60N DISTI # 497-9064-5-ND	STMicroelectronics	MOSFET N-CH 600V 20A TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	4199In Stock	2500:$2.3319 500:$2.9105 100:$3.4189 50:$3.9450 10:$4.1730 1:$4.6500
STP26NM60ND DISTI # 497-14219-5-ND	STMicroelectronics	MOSFET N-CH 600V 21A TO220 RoHS: Compliant Min Qty: 1000 Container: Tube	Limited Supply - Call
STP26NM60N DISTI # STP26NM60N	STMicroelectronics	Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube (Alt: STP26NM60N) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 5100	1000:€1.0619 500:€1.1009 100:€1.1439 50:€1.1899 25:€1.2389 10:€1.3519 1:€1.4869
STP26NM60N DISTI # STP26NM60N	STMicroelectronics	Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube (Alt: STP26NM60N) RoHS: Compliant Min Qty: 1000 Container: Tube	Asia - 5000	50000:$0.9206 25000:$0.9455 10000:$0.9717 5000:$1.0140 3000:$1.0601 2000:$1.1105 1000:$1.1661
STP26NM60N DISTI # STP26NM60N	STMicroelectronics	Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP26NM60N) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	10000:$3.0307 6000:$3.0939 4000:$3.2374 2000:$3.3900 1000:$3.5577
STP26NM60N DISTI # 25R9479	STMicroelectronics	PTD HIGH VOLTAGE	0	500:$3.0900 250:$3.1800 100:$3.8000 50:$4.3900 25:$4.6800 10:$5.3400 1:$6.1700
STP26NM60N DISTI # 511-STP26NM60N	STMicroelectronics	MOSFET N-channel 600 V Mdmesh II Power RoHS: Compliant	1560	1:$4.4200 10:$3.7600 100:$3.2600 250:$3.0900 500:$2.7800 1000:$2.3400
STP26NM60ND DISTI # 511-STP26NM60ND	STMicroelectronics	MOSFET N-CH 600V 0.145Ohm typ. 21A FDmesh II RoHS: Compliant	0
STP26NM60N DISTI # 7610083	STMicroelectronics	MOSFET N-CHANNEL 600V 20A TO220, EA	129	500:£2.0300 150:£2.3700 50:£2.5600 10:£2.7400 1:£3.4600
STP26NM60N DISTI # 7610083P	STMicroelectronics	MOSFET N-CHANNEL 600V 20A TO220, TU	298	500:£2.0300 150:£2.3700 50:£2.5600 10:£2.7400
STP26NM60N DISTI # STP26NM60N	STMicroelectronics	Transistor: N-MOSFET,unipolar,600V,12.6A,140W,TO220-3	21	100:$1.8400 25:$2.3600 5:$2.8200 1:$3.3800
STP26NM60N DISTI # TMOSP10479	STMicroelectronics	N-CH 600V20A160mOhm TO220-3 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	1000:$1.2500
STP26NM60N DISTI # STP26NM60N	STMicroelectronics	N-Ch 600V 20A 140W 0,165R TO220 RoHS: Compliant	100	10:€1.9000 50:€1.5000 200:€1.3000 500:€1.2500
STP26NM60N DISTI # 1737872	STMicroelectronics	MOSFET, N CH, 600V, 20A, TO220	938	500:£2.1600 250:£2.4100 100:£2.5400 10:£2.9300 1:£3.8400

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STP26NM60N

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes