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STF12N65M2

STF12N65M2
Mfr. #:
STF12N65M2
制造商:
STMicroelectronics
描述:
MOSFET N-channel 650 V, 0.42 Ohm typ., 8 A MDmesh M2 Power MOSFET in a TO-220FP package
生命周期:
制造商新产品。
数据表:
STF12N65M2 数据表
交货:
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ECAD Model:
更多信息:
STF12N65M2 更多信息 STF12N65M2 Product Details
产品属性
属性值
制造商：
意法半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-220FP-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
650 V
Id - 连续漏极电流：
8 A
Rds On - 漏源电阻：
500 mOhms
Vgs th - 栅源阈值电压：
2 V
Vgs - 栅源电压：
10 V
Qg - 门电荷：
16.7 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
25 W
配置：
单身的
频道模式：
增强
商品名：
网状网
打包：
管子
系列：
STF12N65M2
晶体管类型：
1 N-Channel Power MOSFET
品牌：
意法半导体
秋季时间：
13.5 ns
产品类别：
MOSFET
上升时间：
7 ns
出厂包装数量：
1000
子类别：
MOSFET
典型关断延迟时间：
34 ns
典型的开启延迟时间：
9 ns
单位重量：
0.081130 oz
Tags
STF12N6, STF12N, STF12, STF1, STF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 650 V, 0.42 Ohm typ., 8 A MDmesh M2 Power MOSFET in a TO-220FP package
***ure Electronics
N-Channel 650 V 500 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP
***ical
Trans MOSFET N-CH 650V 8A 3-Pin(3+Tab) TO-220FP Tube
***(Formerly Allied Electronics)
MOSFET N-Ch 650V 8A MDmesh M2 TO-220FP
***r Electronics
Power Field-Effect Transistor, 8A I(D), 650V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
Mosfet, N-Ch, 650V, 8A, 150Deg C, 25W; Transistor Polarity:n Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.42Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***icroelectronics
N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in TO-220FP package
***ure Electronics
N-Channel 650 V 430 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP
***ical
Trans MOSFET N-CH 650V 10A 3-Pin(3+Tab) TO-220FP Tube
***(Formerly Allied Electronics)
MOSFET N-Ch 650V 10A MDmesh M2 TO-220FP
***r Electronics
Power Field-Effect Transistor, 10A I(D), 650V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N-CH, 650V, 10A, 150DEG C, 25W; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
***icroelectronics
N-channel 650 V, 0.43 Ohm typ., 9 A MDmesh M5 Power MOSFET in TO-220FP package
***ical
Trans MOSFET N-CH 650V 9A 3-Pin(3+Tab) TO-220FP Tube
***r Electronics
Power Field-Effect Transistor, 9A I(D), 650V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N-CH, 650V, 9A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:9A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***icroelectronics
N-channel 500 V, 0.40 Ohm typ., 8.5 A MDmesh II Power MOSFET in a TO-220FP package
***ark
Mosfet Transistor, N Channel, 8.5 A, 500 V, 0.4 Ohm, 10 V, 3 V Rohs Compliant: Yes
***et
Trans MOSFET N-CH 500V 8.5A 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
N-Channel 500 V 470 mO 19 nC Flange Mount MDmesh™ II Power Mosfet - TO-220FP
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 9A I(D), 500V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 500V, 9A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe
***ineon SCT
Single N-Channel 600 V 460 mOhm 28 nC CoolMOS Power Mosfet - TO-220-3FP, PG-TO220-3, RoHS
***ical
Trans MOSFET N-CH 600V 13.1A 3-Pin(3+Tab) TO-220FP Tube
***ark
Mosfet, N-Ch, 600V, 13.1A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:13.1A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.41Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***emi
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 10.2 A, 380 mΩ, TO-220F
***ical
Trans MOSFET N-CH 650V 10.2A 3-Pin(3+Tab) TO-220F Rail
***r Electronics
Power Field-Effect Transistor, 10.2A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
SuperFET®II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
***et
CoolMOS E6 Power Transistor N-Channel 600V 9.2A 3-Pin TO-220FP
***el Electronic
Trans MOSFET N-CH 650V 9.2A 3-Pin(3+Tab) TO-220 Full-Pack
***ineon SCT
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS
***ineon
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
MDmesh™ II Power MOSFETs
STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
型号 制造商 描述 库存 价格
STF12N65M2
DISTI # V99:2348_17624286		STMicroelectronicsTrans MOSFET N-CH 650V 8A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		997
  • 5000:$0.6858
  • 2000:$0.6892
  • 1000:$0.7106
  • 500:$0.8658
  • 100:$1.0055
  • 10:$1.2719
  • 1:$1.6471
STF12N65M2
DISTI # V36:1790_13796745		STMicroelectronicsTrans MOSFET N-CH 650V 8A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		0
  • 1000000:$0.6193
  • 500000:$0.6223
  • 100000:$0.9072
  • 10000:$1.4230
  • 1000:$1.5100
STF12N65M2
DISTI # 497-15531-5-ND		STMicroelectronicsMOSFET N-CH 650V 8A TO220FP
RoHS: Compliant
Min Qty: 1
Container: Tube		891In Stock
  • 5000:$0.6975
  • 2500:$0.7243
  • 500:$0.9390
  • 100:$1.1429
  • 50:$1.3414
  • 10:$1.4220
  • 1:$1.5800
STF12N65M2
DISTI # 32319236		STMicroelectronicsTrans MOSFET N-CH 650V 8A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		997
  • 9:$1.6471
STF12N65M2
DISTI # 30608520		STMicroelectronicsTrans MOSFET N-CH 650V 8A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		16
  • 15:$1.7125
STF12N65M2
DISTI # STF12N65M2		STMicroelectronicsTrans MOSFET N-CH 650V 8A 3-Pin TO-220FP Tube - Rail/Tube (Alt: STF12N65M2)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$0.6519
  • 6000:$0.6659
  • 4000:$0.6969
  • 2000:$0.7299
  • 1000:$0.7659
STF12N65M2
DISTI # STF12N65M2		STMicroelectronicsTrans MOSFET N-CH 650V 8A 3-Pin TO-220FP Tube (Alt: STF12N65M2)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€0.7259
  • 500:€0.7479
  • 100:€0.7829
  • 50:€0.8309
  • 25:€0.9769
  • 10:€1.2199
  • 1:€1.9019
STF12N65M2
DISTI # STF12N65M2		STMicroelectronicsTrans MOSFET N-CH 650V 8A 3-Pin TO-220FP Tube (Alt: STF12N65M2)
RoHS: Compliant
Min Qty: 2000
Container: Tube		Asia - 0
  • 100000:$0.5658
  • 50000:$0.5811
  • 20000:$0.5972
  • 10000:$0.6232
  • 6000:$0.6515
  • 4000:$0.6825
  • 2000:$0.7167
STF12N65M2
DISTI # 56Y0939		STMicroelectronicsPTD HIGH VOLTAGE0
  • 5000:$0.6650
  • 2500:$0.6850
  • 1000:$0.8490
  • 500:$0.9460
  • 100:$1.0300
  • 10:$1.2800
  • 1:$1.5000
STF12N65M2
DISTI # 511-STF12N65M2		STMicroelectronicsMOSFET N-channel 650 V, 0.42 Ohm typ., 8 A MDmesh M2 Power MOSFET in a TO-220FP package
RoHS: Compliant		12
  • 1:$1.5100
  • 10:$1.2800
  • 100:$1.0300
  • 500:$0.8950
  • 1000:$0.7410
STF12N65M2
DISTI # 8765639P		STMicroelectronicsMOSFET N-CH 650V 8A MDMESH M2 TO-220FP, TU535
  • 100:£0.7460
  • 50:£0.9260
STF12N65M2
DISTI # 3132736		STMicroelectronicsMOSFET, N-CH, 650V, 8A, 150DEG C, 25W
RoHS: Compliant		0
  • 500:£0.6800
  • 250:£0.7200
  • 100:£0.7700
  • 10:£0.9100
  • 1:£1.0300
STF12N65M2
DISTI # C1S730200999650		STMicroelectronicsMOSFETs16
  • 10:$1.3600
  • 1:$1.3700
STF12N65M2
DISTI # 3132736		STMicroelectronicsMOSFET, N-CH, 650V, 8A, 150DEG C, 25W
RoHS: Compliant		0
  • 1000:$1.0100
  • 500:$1.1900
  • 250:$1.2600
  • 100:$1.3400
  • 10:$1.5900
  • 1:$1.8000
图片 型号 描述
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Mfr.#: TCAN334GDR

OMO.#: OMO-TCAN334GDR

 CAN Interface IC TCAN334G
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Mfr.#: IPD70R900P7SAUMA1

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Mfr.#: ESP-WROOM-02

OMO.#: OMO-ESP-WROOM-02

 WiFi Modules (802.11) SMD Module, ESP8266EX, 16Mbits SPI flash, UART Mode
PTV09A-2020F-B103

Mfr.#: PTV09A-2020F-B103

OMO.#: OMO-PTV09A-2020F-B103

 Potentiometers 10K LINEAR 20%
PTV09A-2020F-B103

Mfr.#: PTV09A-2020F-B103

OMO.#: OMO-PTV09A-2020F-B103-BOURNS

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ESP-WROOM-02

Mfr.#: ESP-WROOM-02

OMO.#: OMO-ESP-WROOM-02-ESPRESSIF-SYSTEMS

 SMD MODULE, ESP8266EX, 16MBITS S
DSC1001DE5-018.4320

Mfr.#: DSC1001DE5-018.4320

OMO.#: OMO-DSC1001DE5-018-4320-MICROCHIP-TECHNOLOGY

 Oscillator MEMS 18.432MHz ±10ppm (Stability) 15pF CMOS 55% 1.8V/2.5V/3.3V Automotive 4-Pin VDFN SMD Tube
TCAN334GDR

Mfr.#: TCAN334GDR

OMO.#: OMO-TCAN334GDR-TEXAS-INSTRUMENTS

 CAN Interface IC 3.3-V CAN Transceivers with CAN FD (Flexible Data Rate) 8-SOIC -40 to 125
可用性
库存:
Available
订购:
1984
输入数量:
STF12N65M2的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$1.51
US$1.51
10
US$1.28
US$12.80
100
US$1.03
US$103.00
500
US$0.90
US$447.50
1000
US$0.74
US$741.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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