IXFH50N20

Mfr. #:: IXFH50N20
制造商:: Littelfuse
描述:: MOSFET DIODE Id50 BVdass200
生命周期:: 制造商新产品。
数据表:: IXFH50N20 数据表
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ECAD Model:

产品属性
属性值

制造商: IXYS

产品分类: FET - 单

系列: IXFH50N20

打包: 管子

单位重量: 0.229281 oz

安装方式: 通孔

商品名: 超场效应晶体管

包装盒: TO-247-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 300 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 16 ns

上升时间: 15 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 50 A

Vds-漏-源-击穿电压: 200 V

Rds-On-Drain-Source-Resistance: 45 mOhms

晶体管极性: N通道

典型关断延迟时间: 72 ns

典型开启延迟时间: 18 ns

正向跨导最小值: 32 S

通道模式: 增强

Tags: IXFH50N2, IXFH50, IXFH5, IXFH, IXF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXFH50N20 描述

***ical: Trans MOSFET N-CH Si 200V 50A 3-Pin(3+Tab) TO-247AD

***inecomponents.com: MOSFETs w/Fast Intrinsic Diode

***ark: Mosfet, N, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:50A; On Resistance Rds(On):0.045Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes

Market price

型号	制造商	描述	库存	价格
IXFH50N20 DISTI # IXFH50N20-ND	IXYS Corporation	MOSFET N-CH 200V 50A TO-247AD RoHS: Compliant Min Qty: 1 Container: Tube	1419In Stock	510:$6.0450 120:$7.2150 30:$7.9950 1:$9.7500
IXFH50N20 DISTI # 747-IXFH50N20	IXYS Corporation	MOSFET DIODE Id50 BVdass200 RoHS: Compliant	0
IXFH50N20SP	IXYS Corporation		3	3:$14.2800 1:$15.3000

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