BSM120D12P2C005

BSM120D12P2C005
Mfr. #:
BSM120D12P2C005
制造商:
Rohm Semiconductor
描述:
Discrete Semiconductor Modules Mod: 1200V 120A (w/ Diode)
生命周期:
制造商新产品。
数据表:
BSM120D12P2C005 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
BSM120D12P2C005 更多信息
产品属性
属性值
制造商:
罗姆半导体
产品分类:
分立半导体模块
RoHS:
Y
产品:
功率半导体模块
类型:
碳化硅功率MOSFET
Vgs - 栅源电压:
- 6 V, 22 V
安装方式:
螺丝安装
包装/案例:
模块
最低工作温度:
- 40 C
最高工作温度:
+ 150 C
系列:
BSMx
打包:
大部分
配置:
半桥
高度:
21.1 mm
长度:
122 mm
宽度:
45.6 mm
品牌:
罗姆半导体
通道数:
1 Channel
晶体管极性:
N通道
典型延迟时间:
45 ns
秋季时间:
60 ns
Id - 连续漏极电流:
134 A
Pd - 功耗:
935 W
产品类别:
分立半导体模块
上升时间:
50 ns
出厂包装数量:
12
子类别:
分立半导体模块
典型关断延迟时间:
170 ns
典型的开启延迟时间:
45 ns
Vds - 漏源击穿电压:
1200 V
Vgs th - 栅源阈值电压:
1.6 V
第 # 部分别名:
BSM120D12P2C005
单位重量:
9.856004 oz
Tags
BSM1, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Module, N Channel, 120 A, 1.2 kV, 2.7 V RoHS Compliant: Yes
***Components
Dual SiC N-Channel SiC Power Module, 120 A, 1200 V, 4-Pin C ROHM BSM120D12P2C005
***et
Trans SiC MOSFET N-CH 1.2KV 120A 10-Pin Case C Tray
***i-Key
MOSFET 2N-CH 1200V 120A MODULE
***ukat
SiC-N-Ch-Half-Bridge+2xSBD 1200V 134A C-
***ment14 APAC
MODULE, POWER, SIC, 1200V, 120A
***p One Stop Japan
Power Module Automotive 10-Pin Tray
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
型号 制造商 描述 库存 价格
BSM120D12P2C005
DISTI # BSM120D12P2C005-ND
ROHM SemiconductorMOSFET 2N-CH 1200V 120A MODULE
RoHS: Compliant
Min Qty: 1
Container: Bulk
On Order
  • 10:$372.1830
  • 1:$391.0600
BSM120D12P2C005
DISTI # BSM120D12P2C005
ROHM SemiconductorTrans SiC MOSFET N-CH 1.2KV 120A 10-Pin Case C Tray - Bulk (Alt: BSM120D12P2C005)
RoHS: Compliant
Min Qty: 12
Container: Bulk
Americas - 0
  • 12:$387.8900
  • 24:$363.6900
  • 48:$342.3900
  • 72:$323.3900
  • 120:$314.6900
BSM120D12P2C005
DISTI # 755-BSM120D12P2C005
ROHM SemiconductorDiscrete Semiconductor Modules Mod: 1200V 120A (w/ Diode)
RoHS: Compliant
0
  • 1:$391.0600
  • 5:$381.6300
BSM120D12P2C005
DISTI # 2345472
ROHM SemiconductorMODULE, POWER, SIC, 1200V, 120A
RoHS: Compliant
0
  • 1:£371.0000
  • 5:£307.0000
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可用性
库存:
Available
订购:
4000
输入数量:
BSM120D12P2C005的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$355.48
US$355.48
5
US$346.93
US$1 734.65
10
US$338.32
US$3 383.20
25
US$333.57
US$8 339.25
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