IXYH100N65C3

Mfr. #:: IXYH100N65C3
制造商:: Littelfuse
描述:: IGBT Transistors 650V/200A XPT C3-Class TO-247
生命周期:: 制造商新产品。
数据表:: IXYH100N65C3 数据表
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更多信息:: IXYH100N65C3 更多信息

产品属性
属性值

制造商: IXYS

产品分类: IGBT - 单

系列: GenX3, XPT

打包: 管子

单位重量: 1.340411 oz

安装方式: 通孔

商品名: XPT

包装盒: TO-247-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-247 (IXYH)

配置: 单身的

最大功率: 830W

反向恢复时间trr: -

电流收集器 Ic-Max: 200A

电压收集器发射极击穿最大值: 650V

IGBT型: PT

电流收集器脉冲Icm: 420A

Vce-on-Max-Vge-Ic: 2.3V @ 15V, 70A

开关能源: 2.15mJ (on), 840μJ (off)

栅极电荷: 164nC

Td-on-off-25°C: 28ns/106ns

测试条件: 400V, 50A, 3 Ohm, 15V

钯功耗: 830 W

最高工作温度: + 175 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 650 V

集电极-发射极-饱和-电压: 1.85 V

25-C 时的连续集电极电流: 200 A

栅极-发射极-漏电流: 100 nA

最大栅极发射极电压: 30 V

连续集电极电流 Ic-Max: 200 A

Tags: IXYH10, IXYH1, IXYH, IXY

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXYH100N65C3 描述

***ical: Trans IGBT Chip N-CH 650V 200A

***i-Key: IGBT 650V 200A 830W TO247

IXYH100N65C3 更多信息

Electrical Vehicle DC Fast Chargers: DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

650V XPT™ High Speed Trench IGBTs: IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More

Market price

型号	制造商	描述	库存	价格
IXYH100N65C3 DISTI # V36:1790_07768386	Littelfuse Inc	Trans IGBT Chip N-CH 650V 200A 830000mW 3-Pin(3+Tab) TO-247AD	0	30000:$4.0970 15000:$4.1000 3000:$4.4990 300:$5.2560 30:$5.3860
IXYH100N65C3 DISTI # IXYH100N65C3-ND	IXYS Corporation	IGBT 650V 200A 830W TO247 Min Qty: 1 Container: Tube	316In Stock	1000:$4.7912 500:$5.5010 250:$6.0333 100:$6.3172 25:$7.2756 10:$7.6300 1:$8.4500
IXYH100N65C3 DISTI # 747-IXYH100N65C3	IXYS Corporation	IGBT Transistors 650V/200A XPT C3-Class TO-247 RoHS: Compliant	66	1:$8.8700 10:$7.9800 25:$7.2700 50:$6.6500 100:$6.5600 250:$5.9800 500:$5.5000 1000:$4.7900
IXYH100N65C3	IXYS Corporation	IGBT Transistors 650V/200A XPT C3-Class TO-247 RoHS: Compliant	Americas -
IXYH100N65C3 DISTI # IXYH100N65C3	IXYS Corporation	650V 200A 830W TO247AD RoHS: Compliant	28	1:€8.3900 5:€5.3900 30:€4.3900 60:€4.2300

图片	型号	描述
	Mfr.#: IXYH10N170C OMO.#: OMO-IXYH10N170C	Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD
	Mfr.#: IXYH100N65A3 OMO.#: OMO-IXYH100N65A3	Discrete Semiconductor Modules Disc IGBT XPT-GenX3 TO-247AD
	Mfr.#: IXYH10N170CV1 OMO.#: OMO-IXYH10N170CV1	IGBT Transistors 1700V/10A XPT IGBT w/ Diode
	Mfr.#: IXyH100N65C3 OMO.#: OMO-IXYH100N65C3	IGBT Transistors 650V/200A XPT C3-Class TO-247
	Mfr.#: IXYH10N170C OMO.#: OMO-IXYH10N170C-IXYS-CORPORATION	IGBT 1.7KV 36A TO247
	Mfr.#: IXYH10N450CHV OMO.#: OMO-IXYH10N450CHV-1190	全新原装
	Mfr.#: IXYH100N65A3 OMO.#: OMO-IXYH100N65A3-IXYS-CORPORATION	IGBT
	Mfr.#: IXYH10N170CV1 OMO.#: OMO-IXYH10N170CV1-IXYS-CORPORATION	IGBT 1.7KV 36A TO247
	Mfr.#: IXYH100N65C3 OMO.#: OMO-IXYH100N65C3-IXYS-CORPORATION	IGBT Transistors 650V/200A XPT C3-Class TO-247

IXYH100N65C3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes