HGT1S12N60B3D

HGT1S12N60B3D
Mfr. #:
HGT1S12N60B3D
制造商:
Rochester Electronics, LLC
描述:
Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA
生命周期:
制造商新产品。
数据表:
HGT1S12N60B3D 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
Tags
HGT1S12N60B, HGT1S12, HGT1S1, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key Marketplace
27A, 600V, N-CHANNEL IGBT
型号 制造商 描述 库存 价格
HGT1S12N60B3DHarris SemiconductorInsulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA
RoHS: Not Compliant
400
  • 1000:$1.2500
  • 500:$1.3200
  • 100:$1.3700
  • 25:$1.4300
  • 1:$1.5400
HGT1S12N60B3DSHarris SemiconductorInsulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
RoHS: Not Compliant
1100
  • 1000:$1.2800
  • 500:$1.3400
  • 100:$1.4000
  • 25:$1.4600
  • 1:$1.5700
图片 型号 描述
HGT1S10N120BNST

Mfr.#: HGT1S10N120BNST

OMO.#: OMO-HGT1S10N120BNST

IGBT Transistors N-Channel IGBT NPT Series 1200V
HGT1S12N60A4S9A

Mfr.#: HGT1S12N60A4S9A

OMO.#: OMO-HGT1S12N60A4S9A

IGBT Transistors 600V N-Channel IGBT SMPS Series
HGT1S10N120BN

Mfr.#: HGT1S10N120BN

OMO.#: OMO-HGT1S10N120BN-1190

全新原装
HGT1S10N50

Mfr.#: HGT1S10N50

OMO.#: OMO-HGT1S10N50-1190

全新原装
HGT1S12N60A4

Mfr.#: HGT1S12N60A4

OMO.#: OMO-HGT1S12N60A4-1190

全新原装
HGT1S12N60A4DS9A

Mfr.#: HGT1S12N60A4DS9A

OMO.#: OMO-HGT1S12N60A4DS9A-1190

全新原装
HGT1S12N60C3

Mfr.#: HGT1S12N60C3

OMO.#: OMO-HGT1S12N60C3-1190

Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-262AA
HGT1S12N60C3S9A

Mfr.#: HGT1S12N60C3S9A

OMO.#: OMO-HGT1S12N60C3S9A-1190

全新原装
HGT1S14N41G3VL29A

Mfr.#: HGT1S14N41G3VL29A

OMO.#: OMO-HGT1S14N41G3VL29A-1190

全新原装
HGT1S14N37G3VLS_R4662

Mfr.#: HGT1S14N37G3VLS_R4662

OMO.#: OMO-HGT1S14N37G3VLS-R4662-1190

- Bulk (Alt: HGT1S14N37G3VLS_R4662)
可用性
库存:
Available
订购:
1500
输入数量:
HGT1S12N60B3D的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$1.88
US$1.88
10
US$1.78
US$17.81
100
US$1.69
US$168.75
500
US$1.59
US$796.90
1000
US$1.50
US$1 500.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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