SIE810DF-T1-GE3

SIE810DF-T1-GE3
Mfr. #:
SIE810DF-T1-GE3
制造商:
Vishay
描述:
RF Bipolar Transistors MOSFET 20V 236A 125W 1.4mohm @ 10V
生命周期:
制造商新产品。
数据表:
SIE810DF-T1-GE3 数据表
交货:
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支付:
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ECAD Model:
更多信息:
SIE810DF-T1-GE3 更多信息
产品属性
属性值
Tags
SIE81, SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 20V 45A 10-Pin PolarPAK T/R
***ure Electronics
MOSFET 20V 236A 125W 1.4mohm @ 10V
***i-Key
MOSFET N-CH 20V 60A POLARPAK
***
N-CHANNEL 20-V (D-S) MOSFET
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
型号 制造商 描述 库存 价格
SIE810DF-T1-GE3
DISTI # SIE810DF-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 20V 60A POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$1.8141
SIE810DF-T1-GE3
DISTI # SIE810DF-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 45A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE810DF-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$1.7900
  • 6000:$1.6900
  • 12000:$1.5900
  • 18000:$1.5900
  • 30000:$1.4900
SIE810DF-T1-GE3
DISTI # 781-SIE810DF-GE3
Vishay IntertechnologiesMOSFET 20V 236A 125W 1.4mohm @ 10V
RoHS: Compliant
0
  • 1:$3.4800
  • 10:$2.8800
  • 100:$2.3700
  • 250:$2.3000
  • 500:$2.0900
  • 1000:$2.0800
  • 3000:$2.0700
SIE810DF-T1-GE3Vishay IntertechnologiesMOSFET 20V 236A 125W 1.4mohm @ 10VAmericas -
    图片 型号 描述
    SIE810DF-T1-E3

    Mfr.#: SIE810DF-T1-E3

    OMO.#: OMO-SIE810DF-T1-E3

    MOSFET 20V 60A 125W 1.4mohm @ 10V
    SIE810DF-T1-GE3

    Mfr.#: SIE810DF-T1-GE3

    OMO.#: OMO-SIE810DF-T1-GE3

    MOSFET 20V 236A 125W 1.4mohm @ 10V
    SIE810DF-T1-GE3

    Mfr.#: SIE810DF-T1-GE3

    OMO.#: OMO-SIE810DF-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 20V 236A 125W 1.4mohm @ 10V
    SIE810DF-T1-E3

    Mfr.#: SIE810DF-T1-E3

    OMO.#: OMO-SIE810DF-T1-E3-VISHAY

    RF Bipolar Transistors MOSFET 20V 60A 125W 1.4mohm @ 10V
    可用性
    库存:
    Available
    订购:
    4500
    输入数量:
    SIE810DF-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$2.24
    US$2.24
    10
    US$2.12
    US$21.23
    100
    US$2.01
    US$201.15
    500
    US$1.90
    US$949.90
    1000
    US$1.79
    US$1 788.00
    由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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