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SIE810DF-T1-E3

SIE810DF-T1-E3
Mfr. #:
SIE810DF-T1-E3
制造商:
Vishay / Siliconix
描述:
MOSFET 20V 60A 125W 1.4mohm @ 10V
生命周期:
制造商新产品。
数据表:
SIE810DF-T1-E3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
SIE810DF-T1-E3 Datasheet
ECAD Model:
更多信息:
SIE810DF-T1-E3 更多信息
产品属性
属性值
制造商：
威世
产品分类：
MOSFET
RoHS：
E
技术：
硅
商品名：
TrenchFET、PolarPAK
打包：
卷轴
系列：
SIE
品牌：
威世 / Siliconix
产品类别：
MOSFET
出厂包装数量：
3000
子类别：
MOSFET
第 # 部分别名：
SIE810DF-E3
Tags
SIE81, SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 20 V 0.02 Ohms Surface Mount Power Mosfet -POLARPAK
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:60000mA; On Resistance, Rds(on):0.0027ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.3V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, POLAR PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:236A; Drain Source Voltage Vds:20V; On Resistance Rds(on):1.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.3V; Power Dissipation Pd:125W; Transistor Case Style:PolarPAK; No. of Pins:10; Base Number:810; Current Id Max:60A; N-channel Gate Charge:90nC; On State Resistance @ Vgs = 2.5V:2.7mohm; On State Resistance @ Vgs = 4.5V:1.6mohm; On State resistance @ Vgs = 10V:1.4mohm; Package / Case:PolarPAK; Power Dissipation Pd:125W; Power Dissipation Pd:125mW; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:0.8V
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
型号 制造商 描述 库存 价格
SIE810DF-T1-E3
DISTI # SIE810DF-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 20V 60A 10-POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$1.8141
SIE810DF-T1-E3
DISTI # SIE810DF-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 45A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE810DF-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$1.7900
  • 6000:$1.6900
  • 12000:$1.5900
  • 18000:$1.5900
  • 30000:$1.4900
SIE810DF-T1-E3
DISTI # 22M8804		Vishay IntertechnologiesN CHANNEL MOSFET, 20V, 60A POLARPAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:1.3V RoHS Compliant: Yes0
  • 1:$1.9500
  • 2000:$1.8600
  • 4000:$1.7400
  • 8000:$1.6200
  • 12000:$1.5500
  • 20000:$1.5300
SIE810DF-T1-E3
DISTI # 69W7162		Vishay IntertechnologiesMOSFET, N CHANNEL, 20V, 60A, POLARPAK-10,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.3V RoHS Compliant: Yes0
  • 1:$3.4800
  • 25:$2.8800
  • 50:$2.6300
  • 100:$2.3700
  • 250:$2.3000
  • 500:$2.0700
SIE810DF-T1-E3
DISTI # 781-SIE810DF-T1-E3		Vishay IntertechnologiesMOSFET 20V 60A 125W 1.4mohm @ 10V
RoHS: Compliant		0
  • 1:$3.4800
  • 10:$2.8800
  • 100:$2.3700
  • 250:$2.3000
  • 500:$2.0700
SIE810DF-T1-E3Vishay IntertechnologiesMOSFET 20V 60A 125W 1.4mohm @ 10VAmericas -
    SIE810DF-T1-E3
    DISTI # 1497642    		Vishay Intertechnologies 
    RoHS: Compliant    		0
    • 1:$5.5100
    • 10:$4.5600
    • 100:$3.7500
    • 250:$3.6500
    • 500:$3.2800
    • 3000:$3.2800
    图片 型号 描述
    SIE810DF-T1-E3

    Mfr.#: SIE810DF-T1-E3

    OMO.#: OMO-SIE810DF-T1-E3

    		 MOSFET 20V 60A 125W 1.4mohm @ 10V
    SIE810DF-T1-GE3

    Mfr.#: SIE810DF-T1-GE3

    OMO.#: OMO-SIE810DF-T1-GE3

    		 MOSFET 20V 236A 125W 1.4mohm @ 10V
    SIE810DF-T1-GE3

    Mfr.#: SIE810DF-T1-GE3

    OMO.#: OMO-SIE810DF-T1-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 20V 236A 125W 1.4mohm @ 10V
    SIE810DF-T1-E3

    Mfr.#: SIE810DF-T1-E3

    OMO.#: OMO-SIE810DF-T1-E3-VISHAY

    		 RF Bipolar Transistors MOSFET 20V 60A 125W 1.4mohm @ 10V
    可用性
    库存:
    Available
    订购:
    5500
    输入数量:
    SIE810DF-T1-E3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$3.48
    US$3.48
    10
    US$2.88
    US$28.80
    100
    US$2.37
    US$237.00
    250
    US$2.30
    US$575.00
    500
    US$2.07
    US$1 035.00
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