T1G4020036-FL

T1G4020036-FL
Mfr. #:
T1G4020036-FL
制造商:
Qorvo
描述:
RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt
生命周期:
制造商新产品。
数据表:
T1G4020036-FL 数据表
交货:
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支付:
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ECAD Model:
更多信息:
T1G4020036-FL 更多信息
产品属性
属性值
制造商
TriQuint (Qorvo)
产品分类
晶体管 - FET、MOSFET - 单
打包
托盘
部分别名
1110866
技术
氮化镓碳化硅
晶体管型
HEMT
获得
16 dB
输出功率
260 W
工作频率
3.5 GHz
晶体管极性
N通道
Tags
T1G402, T1G4, T1G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
RF POWER TRANSISTOR GAN
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
型号 制造商 描述 库存 价格
T1G4020036-FL
DISTI # 20395646
TriQuint SemiconductorRF POWER TRANSISTOR GAN8
  • 1:$623.1000
T1G4020036-FL
DISTI # 772-T1G4020036-FL
QorvoRF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt
RoHS: Compliant
25
  • 1:$656.0000
T1G4020036-FL-EVB
DISTI # 772-T1G4020036FLEVB
QorvoRF Development Tools
RoHS: Compliant
0
  • 1:$875.0000
1110866
DISTI # T1G4020036-FL
QorvoRF POWER TRANSISTOR
RoHS: Compliant
8
  • 1:$355.6900
图片 型号 描述
T1G4020036-FL

Mfr.#: T1G4020036-FL

OMO.#: OMO-T1G4020036-FL

RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt
T1G4020036-FS

Mfr.#: T1G4020036-FS

OMO.#: OMO-T1G4020036-FS

RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt
T1G4020036-FL

Mfr.#: T1G4020036-FL

OMO.#: OMO-T1G4020036-FL-318

RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt
T1G4020036-FS

Mfr.#: T1G4020036-FS

OMO.#: OMO-T1G4020036-FS-318

RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt
T1G4020036-FL-EVB

Mfr.#: T1G4020036-FL-EVB

OMO.#: OMO-T1G4020036-FL-EVB-1152

RF Development Tools
可用性
库存:
Available
订购:
3000
输入数量:
T1G4020036-FL的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$934.65
US$934.65
10
US$887.92
US$8 879.18
100
US$841.18
US$84 118.50
500
US$794.45
US$397 226.25
1000
US$747.72
US$747 720.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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