IRF8910GTRPBF

IRF8910GTRPBF
Mfr. #:
IRF8910GTRPBF
制造商:
Infineon / IR
描述:
MOSFET MOSFT DUAL NCh 20V 10A
生命周期:
制造商新产品。
数据表:
IRF8910GTRPBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF8910GTRPBF DatasheetIRF8910GTRPBF Datasheet (P4-P6)IRF8910GTRPBF Datasheet (P7-P9)IRF8910GTRPBF Datasheet (P10)
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
贴片/贴片
包装/案例:
SO-8
通道数:
2 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
20 V
Id - 连续漏极电流:
10 A
Rds On - 漏源电阻:
13.4 mOhms
Vgs th - 栅源阈值电压:
2.55 V
Qg - 门电荷:
11 nC
最高工作温度:
+ 150 C
Pd - 功耗:
2 W
配置:
双重的
打包:
卷轴
高度:
1.75 mm
长度:
4.9 mm
晶体管类型:
2 N-Channel
宽度:
3.9 mm
品牌:
英飞凌/红外
正向跨导 - 最小值:
24 S
秋季时间:
4.1 ns
产品类别:
MOSFET
上升时间:
10 ns
出厂包装数量:
4000
子类别:
MOSFET
第 # 部分别名:
SP001575420
单位重量:
0.017870 oz
Tags
IRF8910, IRF891, IRF89, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 20V 10A 8-Pin SOIC T/R
***ineon SCT
Halogen Free and Lead Free 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ark
DUAL N CH MOSFET, 20V, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:20V; On Resistance Rds(on):10.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.55V ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
IRF8910PBF Dual N-channel MOSFET Transistor; 10 A; 20 V; 8-Pin SOIC
***Yang
Transistor MOSFET Array Dual N-CH 20V 10A 8-Pin SOIC T/R - Tape and Reel
***ure Electronics
Dual N-Channel 20 V 13.4 mOhm 7.4 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:10A; On Resistance Rds(On):0.0107Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.55V Rohs Compliant: Yes
***ure Electronics
Dual N-Channel 20 V 18.3/11.3 mOhm 11/23 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 12A I(D), 20V, 0.0093ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current; Dual N-Channel MOSFET
***ment14 APAC
N CHANNEL MOSFET, 20V, 10A; Transistor P; N CHANNEL MOSFET, 20V, 10A; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18.3mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:2.55V; No. of Pins:8
***emi
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ
***Yang
Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel
***ure Electronics
Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet - SOIC-8
***ponent Sense
Mosfet Array 2 N-Channel (Dual) 20V 9.4A 900mW Surface Mount 8-SOIC
***hard Electronics
ON SEMICONDUCTOR - FDS6898A - DUAL N CHANNEL MOSFET, 20V, SOIC
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:9.4A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SO-8 ;RoHS Compliant: Yes
***rchild Semiconductor
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***nell
MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 9.4A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel: 9.4A; Current Id Max: 9.4A; Drain Source Voltage Vds, N Channel: 20V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.01ohm; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 20V; Voltage Vgs Max: 1V; Voltage Vgs Rds on Measurement: 4.5V
***emi
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -11A, 14mΩ
***Yang
Trans MOSFET P-CH 20V 11A 8-Pin SOIC N T/R - Tape and Reel
***enic
20V 11A 14m´Î@4.5V11A 2.5W 1.5V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS
***ment14 APAC
MOSFET, P, SMD, 8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-11A; Source Voltage Vds:-20V; On Resistance
***rchild Semiconductor
This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
***nell
MOSFET, P, SMD, 8-SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -11A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -830mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 11A; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -830mV; Voltage Vgs Rds on Measurement: -4.5V
***emi
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ
***Yang
Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel
***ure Electronics
Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet -SOIC-8
***enic
20V 9.4A 14m´Î@4.5V9.4A 900mW 1.5V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS
***ment14 APAC
MOSFET, NN; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:9.4A; Current Id Max:9.4A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):14mohm; Package / Case:SO-8; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
型号 制造商 描述 库存 价格
IRF8910GTRPBF
DISTI # IRF8910GTRPBFTR-ND
Infineon Technologies AGMOSFET 2N-CH 20V 10A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
Limited Supply - Call
    IRF8910GTRPBF
    DISTI # IRF8910GTRPBFCT-ND
    Infineon Technologies AGMOSFET 2N-CH 20V 10A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IRF8910GTRPBF
      DISTI # IRF8910GTRPBFDKR-ND
      Infineon Technologies AGMOSFET 2N-CH 20V 10A 8-SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IRF8910GTRPBF
        DISTI # 70019662
        Infineon Technologies AGMOSFET,DUAL N-CHANNEL,20V,10A,SO-8,HALOGEN-FREE
        RoHS: Compliant
        0
        • 4000:$1.0600
        • 8000:$1.0390
        • 20000:$1.0070
        • 40000:$0.9650
        • 100000:$0.9010
        IRF8910GTRPBF
        DISTI # 942-IRF8910GTRPBF
        Infineon Technologies AGMOSFET MOSFT DUAL NCh 20V 10A
        RoHS: Compliant
        0
          图片 型号 描述
          93LC76CT-I/SN

          Mfr.#: 93LC76CT-I/SN

          OMO.#: OMO-93LC76CT-I-SN

          EEPROM 516x8 Or 1024x8
          2N5322

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          OMO.#: OMO-2N5322

          Bipolar Transistors - BJT 100Vcbo 100Vcev 2A 75Vceo 6.0Vebo 10W
          PIMC31,115

          Mfr.#: PIMC31,115

          OMO.#: OMO-PIMC31-115

          Bipolar Transistors - Pre-Biased DOUBLE RESISTOR EQUIPPED TRANSISTOR
          SQM200N04-1m1L_GE3

          Mfr.#: SQM200N04-1m1L_GE3

          OMO.#: OMO-SQM200N04-1M1L-GE3

          MOSFET 40V 200A, 375W AEC-Q101 Qualified
          PIC18F46K22-I/MV

          Mfr.#: PIC18F46K22-I/MV

          OMO.#: OMO-PIC18F46K22-I-MV

          8-bit Microcontrollers - MCU 64KB 3968b RAM 8bit familynanoWatt XLP
          3000

          Mfr.#: 3000

          OMO.#: OMO-3000

          Development Boards & Kits - AVR Circuit Playground
          ERJ-3GEYJ183V

          Mfr.#: ERJ-3GEYJ183V

          OMO.#: OMO-ERJ-3GEYJ183V

          Thick Film Resistors - SMD 0603 18Kohms 5% AEC-Q200
          R76UW3100SE30K

          Mfr.#: R76UW3100SE30K

          OMO.#: OMO-R76UW3100SE30K

          Film Capacitors 2000Volts 0.1uF 105deg C 10%
          R76UW3100SE30K

          Mfr.#: R76UW3100SE30K

          OMO.#: OMO-R76UW3100SE30K-KEMET

          Film Capacitors 2000Volts 0.1uF 105deg C 10%
          261G3-LPBK

          Mfr.#: 261G3-LPBK

          OMO.#: OMO-261G3-LPBK-673

          Heavy Duty Power Connectors PP45 LOOSE CONT #10-14 AWG
          可用性
          库存:
          Available
          订购:
          3000
          输入数量:
          IRF8910GTRPBF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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