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SI2309DS-T1-E3

SI2309DS-T1-E3
Mfr. #:
SI2309DS-T1-E3
制造商:
Vishay / Siliconix
描述:
MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
生命周期:
制造商新产品。
数据表:
SI2309DS-T1-E3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2309DS-T1-E3 DatasheetSI2309DS-T1-E3 Datasheet (P4-P5)
ECAD Model:
产品属性
属性值
制造商：
威世
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
SOT-23-3
商品名：
沟槽场效应晶体管
打包：
卷轴
高度：
1.45 mm
长度：
2.9 mm
系列：
SI2
宽度：
1.6 mm
品牌：
威世 / Siliconix
产品类别：
MOSFET
出厂包装数量：
3000
子类别：
MOSFET
第 # 部分别名：
SI2309DS-E3
单位重量：
0.000282 oz
Tags
SI2309DS-T1, SI2309DS-T, SI2309D, SI2309, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***C
Trans MOSFET P-CH 60V 1.25A 3-Pin SOT-23 Trans MOSFET P-CH 60V 1.25A 3-Pin SOT-23
***ied Electronics & Automation
MOSFET, Power,P-Ch,VDSS -60V,RDS(ON) 0.275Ohm,ID -1.25A,TO-236 (SOT-23),PD 1.25W
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:-1.25A; On Resistance, Rds(on):0.55ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:SOT-23 ;RoHS Compliant: Yes
***nell
MOSFET, P REEL 3K; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-60V; Current, Id Cont:1.25A; Resistance, Rds On:0.34ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:8A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:1.25W; Power, Pd:1.25W; Quantity, Reel:3000; Resistance, Rds on Max:0.34ohm; SMD Marking:A9; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V; Voltage, Vgs th Max:-1V; Width, External:3.05mm; Width, Tape:8mm
型号 制造商 描述 库存 价格
SI2309DS-T1-E3
DISTI # SI2309DS-T1-E3TR-ND		Vishay SiliconixMOSFET P-CH 60V 1.25A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI2309DS-T1-E3
    DISTI # SI2309DS-T1-E3CT-ND    		Vishay SiliconixMOSFET P-CH 60V 1.25A SOT23-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI2309DS-T1-E3
      DISTI # SI2309DS-T1-E3DKR-ND      		Vishay SiliconixMOSFET P-CH 60V 1.25A SOT23-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI2309DS-T1-E3
        DISTI # 70026067        		Vishay SiliconixMOSFET,Power,P-Ch,VDSS -60V,RDS(ON) 0.275Ohm,ID -1.25A,TO-236 (SOT-23),PD 1.25W
        RoHS: Compliant        		0
        • 1:$0.6200
        • 100:$0.5900
        • 250:$0.5600
        • 500:$0.5300
        • 1000:$0.5100
        SI2309DS-T1-E3
        DISTI # 781-SI2309DS-E3        		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
        RoHS: Compliant        		0
          SI2309DS-T1
          DISTI # 781-SI2309DS          		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
          RoHS: Not compliant          		0
            图片 型号 描述
            SI2309DS

            Mfr.#: SI2309DS

            OMO.#: OMO-SI2309DS

            		 MOSFET Plastic-Encapsulated MOSFET P-CH-60V
            SI2309DS-T1-E3

            Mfr.#: SI2309DS-T1-E3

            OMO.#: OMO-SI2309DS-T1-E3

            		 MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
            SI2309DS

            Mfr.#: SI2309DS

            OMO.#: OMO-SI2309DS-1190

            		 MOSFET Plastic-Encapsulated MOSFET P-CH-60V
            SI2309DS , M1MA151KT2

            Mfr.#: SI2309DS , M1MA151KT2

            OMO.#: OMO-SI2309DS-M1MA151KT2-1190

            		 全新原装
            SI2309DS-T1

            Mfr.#: SI2309DS-T1

            OMO.#: OMO-SI2309DS-T1-1190

            		 MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
            SI2309DS-T1-E3

            Mfr.#: SI2309DS-T1-E3

            OMO.#: OMO-SI2309DS-T1-E3-VISHAY

            		 MOSFET P-CH 60V 1.25A SOT23-3
            SI2309DS-T1-GE3

            Mfr.#: SI2309DS-T1-GE3

            OMO.#: OMO-SI2309DS-T1-GE3-1190

            		 P CH MOSFET, Transistor Polarity:P Channel, Continuous Drain Current Id:-1.25A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):275mohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs
            SI2309DS-TI

            Mfr.#: SI2309DS-TI

            OMO.#: OMO-SI2309DS-TI-1190

            		 全新原装
            SI2309DS-TI-E3

            Mfr.#: SI2309DS-TI-E3

            OMO.#: OMO-SI2309DS-TI-E3-1190

            		 全新原装
            SI2309DST1

            Mfr.#: SI2309DST1

            OMO.#: OMO-SI2309DST1-1190

            		 Small Signal Field-Effect Transistor, 0.00125A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
            可用性
            库存:
            Available
            订购:
            5500
            输入数量:
            SI2309DS-T1-E3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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