SI4668DY-T1-E3

SI4668DY-T1-E3
Mfr. #:
SI4668DY-T1-E3
制造商:
Vishay
描述:
RF Bipolar Transistors MOSFET 25V 16.2A 5.0W
生命周期:
制造商新产品。
数据表:
SI4668DY-T1-E3 数据表
交货:
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ECAD Model:
更多信息:
SI4668DY-T1-E3 更多信息
产品属性
属性值
制造商
威世
产品分类
FET - 单
打包
卷轴
部分别名
SI4668DY-E3
单位重量
0.006596 oz
安装方式
贴片/贴片
包装盒
SOIC-Narrow-8
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
2.5 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
18 ns
上升时间
12 ns
VGS-栅极-源极-电压
16 V
Id 连续漏极电流
11.5 A
Vds-漏-源-击穿电压
25 V
Rds-On-Drain-Source-Resistance
10.5 mOhms
晶体管极性
N通道
典型关断延迟时间
73 ns
典型开启延迟时间
21 ns
通道模式
增强
Tags
SI466, SI46, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 25V 16.2A 8SO
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
型号 制造商 描述 库存 价格
SI4668DY-T1-E3
DISTI # SI4668DY-T1-E3-ND
Vishay SiliconixMOSFET N-CH 25V 16.2A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.5236
SI4668DY-T1-E3
DISTI # 781-SI4668DY-E3
Vishay IntertechnologiesMOSFET 25V 16.2A 5.0W
RoHS: Compliant
0
  • 2500:$0.4760
  • 5000:$0.4530
  • 10000:$0.4360
图片 型号 描述
SI4668DY-T1-GE3

Mfr.#: SI4668DY-T1-GE3

OMO.#: OMO-SI4668DY-T1-GE3

MOSFET 25V 16.2A 5.0W 10.5mohm @ 10V
SI4668DY-T1-E3

Mfr.#: SI4668DY-T1-E3

OMO.#: OMO-SI4668DY-T1-E3

MOSFET 25V 16.2A 5.0W
SI4668DY-T1-E3

Mfr.#: SI4668DY-T1-E3

OMO.#: OMO-SI4668DY-T1-E3-VISHAY

RF Bipolar Transistors MOSFET 25V 16.2A 5.0W
SI4668DY-T1-GE3

Mfr.#: SI4668DY-T1-GE3

OMO.#: OMO-SI4668DY-T1-GE3-VISHAY

RF Bipolar Transistors MOSFET 25V 16.2A 5.0W 10.5mohm @ 10V
可用性
库存:
Available
订购:
4500
输入数量:
SI4668DY-T1-E3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$0.65
US$0.65
10
US$0.62
US$6.21
100
US$0.59
US$58.86
500
US$0.56
US$277.95
1000
US$0.52
US$523.20
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