SI4668DY-T1-GE3

SI4668DY-T1-GE3
Mfr. #:
SI4668DY-T1-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET 25V 16.2A 5.0W 10.5mohm @ 10V
生命周期:
制造商新产品。
数据表:
SI4668DY-T1-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4668DY-T1-GE3 DatasheetSI4668DY-T1-GE3 Datasheet (P4-P6)SI4668DY-T1-GE3 Datasheet (P7)
ECAD Model:
更多信息:
SI4668DY-T1-GE3 更多信息
产品属性
属性值
制造商:
威世
产品分类:
MOSFET
RoHS:
Y
技术:
商品名:
沟槽场效应晶体管
打包:
卷轴
系列:
SI4
品牌:
威世 / Siliconix
产品类别:
MOSFET
出厂包装数量:
2500
子类别:
MOSFET
第 # 部分别名:
SI4668DY-GE3
单位重量:
0.006596 oz
Tags
SI466, SI46, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 25V 16.2A 8SO
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:16200mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0125ohm; Rds(on) Test Voltage, Vgs:16V; Threshold Voltage, Vgs Typ:2.6V; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
型号 制造商 描述 库存 价格
SI4668DY-T1-GE3
DISTI # SI4668DY-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 25V 16.2A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.5236
SI4668DY-T1-GE3
DISTI # 781-SI4668DY-T1-GE3
Vishay IntertechnologiesMOSFET 25V 16.2A 5.0W 10.5mohm @ 10V
RoHS: Compliant
0
  • 2500:$0.4760
  • 5000:$0.4530
  • 10000:$0.4360
图片 型号 描述
SI4668DY-T1-GE3

Mfr.#: SI4668DY-T1-GE3

OMO.#: OMO-SI4668DY-T1-GE3

MOSFET 25V 16.2A 5.0W 10.5mohm @ 10V
SI4668DY-T1-E3

Mfr.#: SI4668DY-T1-E3

OMO.#: OMO-SI4668DY-T1-E3

MOSFET 25V 16.2A 5.0W
SI4668DY-T1-E3

Mfr.#: SI4668DY-T1-E3

OMO.#: OMO-SI4668DY-T1-E3-VISHAY

RF Bipolar Transistors MOSFET 25V 16.2A 5.0W
SI4668DY-T1-GE3

Mfr.#: SI4668DY-T1-GE3

OMO.#: OMO-SI4668DY-T1-GE3-VISHAY

RF Bipolar Transistors MOSFET 25V 16.2A 5.0W 10.5mohm @ 10V
可用性
库存:
Available
订购:
5000
输入数量:
SI4668DY-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
从...开始
最新产品
Top