TGF2954

TGF2954
Mfr. #:
TGF2954
制造商:
Qorvo
描述:
RF JFET Transistors DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm
生命周期:
制造商新产品。
数据表:
TGF2954 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
TGF2954 更多信息
产品属性
属性值
制造商:
克里公司
产品分类:
射频 JFET 晶体管
RoHS:
Y
晶体管类型:
HEMT
技术:
氮化镓
获得:
18.6 dB
晶体管极性:
N通道
Vds - 漏源击穿电压:
150 V
Vgs - 栅源击穿电压:
- 10 V to 2 V
Id - 连续漏极电流:
18 A
输出功率:
330 W
最大漏栅电压:
-
最低工作温度:
- 40 C
最高工作温度:
+ 130 C
Pd - 功耗:
-
安装方式:
螺丝安装
包装/案例:
440162
打包:
管子
应用:
-
配置:
单身的
高度:
3.78 mm
长度:
20.45 mm
工作频率:
1.2 GHz to 1.4 GHz
工作温度范围:
-
产品:
氮化镓 HEMT
宽度:
10.29 mm
品牌:
Wolfspeed / 克里
正向跨导 - 最小值:
-
栅源截止电压:
-
班级:
-
开发套件:
CGHV14250F-TB
秋季时间:
-
NF - 噪声系数:
-
P1dB - 压缩点:
-
产品类别:
射频 JFET 晶体管
Rds On - 漏源电阻:
-
上升时间:
-
出厂包装数量:
50
子类别:
晶体管
典型关断延迟时间:
-
Vgs th - 栅源阈值电压:
- 3 V
Tags
TGF295, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 12 GHz, 27 W, 19.6 dB, 32 V, GaN, DIE
TGF GaN on SiC Transistors
Qorvo TGF GaN on SiC Transistors for the Satellite, P to P, and Military communications along with Marine radar and Test and instrumentation. These are small footprint (dies) that handle high power (7W to 70W) and high frequency, up to 14GHz.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
型号 制造商 描述 库存 价格
TGF2954
DISTI # 772-TGF2954
QorvoRF JFET Transistors DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm
RoHS: Compliant
4
  • 1:$69.3000
  • 25:$59.9400
  • 100:$51.8400
1112246
DISTI # TGF2954
QorvoRF POWER TRANSISTOR
RoHS: Compliant
0
  • 1:$6.4000
图片 型号 描述
TGF2957

Mfr.#: TGF2957

OMO.#: OMO-TGF2957

RF JFET Transistors DC-12GHz 70W 32V GaN P3dB @ 3GHz 48.6dBm
TGF2954

Mfr.#: TGF2954

OMO.#: OMO-TGF2954

RF JFET Transistors DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm
TGF2819-FS

Mfr.#: TGF2819-FS

OMO.#: OMO-TGF2819-FS-318

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF2955

Mfr.#: TGF2955

OMO.#: OMO-TGF2955-318

RF JFET Transistors DC-12GHz 40W 32V GaN P3dB @ 3GHz 46.5dBm
TGF148-1000Z

Mfr.#: TGF148-1000Z

OMO.#: OMO-TGF148-1000Z-1190

全新原装
TGF3505C06

Mfr.#: TGF3505C06

OMO.#: OMO-TGF3505C06-1190

全新原装
TGF60-07870787-039

Mfr.#: TGF60-07870787-039

OMO.#: OMO-TGF60-07870787-039-LEADER-TECH

THERMAL GAP FILLER, 200X200X1MM, GREY
TGF-12B09-01SA

Mfr.#: TGF-12B09-01SA

OMO.#: OMO-TGF-12B09-01SA-1190

MIL-C-38999 SERIES III SCOOP PROOF THREADED - Bulk (Alt: TGF-12B09-01SA)
TGF-R-5309-10

Mfr.#: TGF-R-5309-10

OMO.#: OMO-TGF-R-5309-10-1190

D8 - CONNECTOR, ACCESS
TGFSB

Mfr.#: TGFSB

OMO.#: OMO-TGFSB-PANDUIT

TG FIBER SPOOL BRACKET
可用性
库存:
Available
订购:
1987
输入数量:
TGF2954的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$69.30
US$69.30
25
US$59.94
US$1 498.50
100
US$51.84
US$5 184.00
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