STGW75M65DF2

STGW75M65DF2
Mfr. #:
STGW75M65DF2
制造商:
STMicroelectronics
描述:
IGBT Transistors PTD HIGH VOLTAGE
生命周期:
制造商新产品。
数据表:
STGW75M65DF2 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
STGW75M65DF2 更多信息 STGW75M65DF2 Product Details
产品属性
属性值
制造商:
意法半导体
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
TO-247-3
安装方式:
通孔
配置:
单身的
集电极-发射极电压 VCEO 最大值:
650 V
集电极-发射极饱和电压:
1.65 V
最大栅极发射极电压:
20 V
25 C 时的连续集电极电流:
120 A
Pd - 功耗:
468 W
最低工作温度:
- 55 C
最高工作温度:
+ 175 C
系列:
STGW75M65DF2
连续集电极电流 Ic 最大值:
120 A
品牌:
意法半导体
栅极-发射极漏电流:
+/- 250 uA
产品类别:
IGBT晶体管
出厂包装数量:
600
子类别:
IGBT
单位重量:
0.211644 oz
Tags
STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.
型号 制造商 描述 库存 价格
STGW75M65DF2
DISTI # 497-16974-ND
STMicroelectronicsTRENCH GATE FIELD-STOP IGBT M SE
Min Qty: 1
Container: Tube
600In Stock
  • 2500:$2.9120
  • 500:$3.6254
  • 100:$4.2588
  • 25:$4.9140
  • 10:$5.1980
  • 1:$5.7900
STGW75M65DF2
DISTI # STGW75M65DF2
STMicroelectronicsTrans IGBT Chip N 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW75M65DF2)
RoHS: Compliant
Min Qty: 600
Container: Tube
Americas - 0
  • 6000:$2.5900
  • 3000:$2.6900
  • 1800:$2.7900
  • 1200:$2.8900
  • 600:$3.0900
STGW75M65DF2
DISTI # STGW75M65DF2
STMicroelectronicsTrans IGBT Chip N 650V 120A 3-Pin TO-247 Tube (Alt: STGW75M65DF2)
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€3.4900
  • 500:€3.6900
  • 100:€3.8900
  • 50:€3.9900
  • 25:€4.1900
  • 10:€4.3900
  • 1:€4.7900
STGW75M65DF2
DISTI # 20AC4225
STMicroelectronicsPTD HIGH VOLTAGE
RoHS: Not Compliant
0
  • 1:$2.6000
STGW75M65DF2
DISTI # 511-STGW75M65DF2
STMicroelectronicsIGBT Transistors PTD HIGH VOLTAGE
RoHS: Compliant
585
  • 1:$5.5000
  • 10:$4.6800
  • 100:$4.0500
  • 250:$3.8400
  • 500:$3.4500
图片 型号 描述
HGTG30N60A4D

Mfr.#: HGTG30N60A4D

OMO.#: OMO-HGTG30N60A4D

IGBT Transistors 600V N-Channel IGBT SMPS Series
HGTG30N60A4D

Mfr.#: HGTG30N60A4D

OMO.#: OMO-HGTG30N60A4D-ON-SEMICONDUCTOR

IGBT Transistors 600V N-Channel IGBT SMPS Series
可用性
库存:
595
订购:
2578
输入数量:
STGW75M65DF2的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$5.50
US$5.50
10
US$4.68
US$46.80
100
US$4.05
US$405.00
250
US$3.84
US$960.00
500
US$3.45
US$1 725.00
从...开始
最新产品
Top