MR0A08BCMA35R

MR0A08BCMA35R
Mfr. #:
MR0A08BCMA35R
制造商:
Everspin Technologies
描述:
NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
生命周期:
制造商新产品。
数据表:
MR0A08BCMA35R 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
MR0A08BCMA35R 更多信息
产品属性
属性值
制造商:
恒旋科技
产品分类:
NVRAM
RoHS:
Y
包装/案例:
BGA-48
接口类型:
平行线
内存大小:
1 Mbit
组织:
128 k x 8
数据总线宽度:
8 bit
访问时间:
35 ns
电源电压 - 最大值:
3.6 V
电源电压 - 最小值:
3 V
工作电源电流:
55 mA
最低工作温度:
- 40 C
最高工作温度:
+ 85 C
系列:
MR0A08B
打包:
卷轴
品牌:
恒旋科技
安装方式:
贴片/贴片
湿气敏感:
是的
产品类别:
NVRAM
出厂包装数量:
2000
子类别:
内存和数据存储
Tags
MR0A08BC, MR0A0, MR0A, MR0
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IC RAM 1M PARALLEL 48FBGA
Magnetoresistive Random Access Memory (MRAM)
Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
Everspin MRAM
MR0A08B / MR0D08B / MR0A16A 1Mb Parallel MRAM
Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, and organized as 131,072 words of 8 bits or 65,536 words of 16 bits. These MRAM devices are as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance. 
型号 制造商 描述 库存 价格
MR0A08BCMA35R
DISTI # MR0A08BCMA35R-ND
Everspin TechnologiesIC RAM 1M PARALLEL 48FBGA
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2000:$8.8844
MR0A08BCMA35
DISTI # 936-MR0A08BCMA35
Everspin TechnologiesNVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
RoHS: Compliant
0
  • 1:$11.7100
  • 10:$10.8500
  • 25:$10.6100
  • 50:$10.5500
  • 100:$9.2900
  • 250:$8.8300
  • 500:$8.7400
MR0A08BCMA35R
DISTI # 936-MR0A08BCMA35R
Everspin TechnologiesNVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
RoHS: Compliant
0
  • 2000:$8.4800
图片 型号 描述
MR0A08BMA35

Mfr.#: MR0A08BMA35

OMO.#: OMO-MR0A08BMA35

NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BYS35

Mfr.#: MR0A08BYS35

OMO.#: OMO-MR0A08BYS35

NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BSO35

Mfr.#: MR0A08BSO35

OMO.#: OMO-MR0A08BSO35

NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BCSO35

Mfr.#: MR0A08BCSO35

OMO.#: OMO-MR0A08BCSO35

NVRAM 3.3V 1Mb (128Kx8) MRAM
MR0A08BYS35R

Mfr.#: MR0A08BYS35R

OMO.#: OMO-MR0A08BYS35R-EVERSPIN-TECHNOLOGIES

NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BSO35R

Mfr.#: MR0A08BSO35R

OMO.#: OMO-MR0A08BSO35R-EVERSPIN-TECHNOLOGIES

NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BCYS35R

Mfr.#: MR0A08BCYS35R

OMO.#: OMO-MR0A08BCYS35R-EVERSPIN-TECHNOLOGIES

NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BYS35

Mfr.#: MR0A08BYS35

OMO.#: OMO-MR0A08BYS35-EVERSPIN-TECHNOLOGIES

NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BMA35

Mfr.#: MR0A08BMA35

OMO.#: OMO-MR0A08BMA35-EVERSPIN-TECHNOLOGIES

IC RAM 1M PARALLEL 48FBGA
MR0A08BMYS35

Mfr.#: MR0A08BMYS35

OMO.#: OMO-MR0A08BMYS35-1190

全新原装
可用性
库存:
Available
订购:
4500
输入数量:
MR0A08BCMA35R的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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